Numerical investigation on buried gate and drift region with P-type blocks in trench SOI LDMOS. - Hu, Yue; Wang, Tianci; Wu, Changmiao; Wang, Jing; Cheng, Yuhua; Zhao, Wen-Sheng; Wang, Gaofeng (Microelectron. J., 2025)

Three-dimensional design of SOI LDMOS with high-k film trench and L-shaped gate. - Hu, Yue; Wang, Tianci; Wu, Changmiao; Wang, Jing; Cheng, Yuhua; Zhao, Wen-Sheng; Wang, Gaofeng (Microelectron. J., 2025)