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2020 – today
- 2025
[j7]Ziwei Hu
, Jiafei Yao, Fan Yang, Yuxuan Dai, Kemeng Yang, Man Li, Jing Chen, Maolin Zhang, Jun Zhang, Yufeng Guo:
A novel double-trench SiC SBD-embedded MOSFET with improved figure-of-merit and short-circuit ruggedness. Microelectron. J. 155: 106495 (2025)- [j6]Man Li, Xinyu Zhang, Kemeng Yang, Jiafei Yao, Jun Zhang, Jing Chen, Yufeng Guo:
Self-adaptive body bias tuning technique for enhancing Baliga's figure-of-merit (BFOM) in thin bulk silicon LDMOS. Microelectron. J. 156: 106559 (2025) - [j5]Yuxuan Dai, Jiafei Yao, Jing Chen, Maolin Zhang, Yucheng Xu, Qing Yao, Qingyou Qian, Jun Zhang, Kemeng Yang, Yufeng Guo:
A cross-scale investigation on transient electrothermal performance for power MOSFETs at device-package level. Microelectron. J. 156: 106561 (2025) - [j4]Qing Yao, Jing Chen, Kemeng Yang, Jiafei Yao, Jun Zhang, Yuxuan Dai, Weihua Tang, Bo Zhang, Yufeng Guo:
Efficient Automatic Design of IGBT Structural Parameters Using Differential Evolution and Machine Learning Model. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 44(3): 1059-1069 (2025) - 2024
- [j3]Jiafei Yao, Zhengfei Yang, Yeqin Zhu, Qing Yao, Jing Chen, Kemeng Yang, Man Li, Maolin Zhang, Jun Zhang, Yufeng Guo:
Performance enhancement of 4H-SiC superjunction trench MOSFET with extended high-K dielectric. Microelectron. J. 151: 106359 (2024) - [j2]Jing Chen, Jiajun Guo, Qing Yao, Kemeng Yang, Jun Zhang, Jiafei Yao, Yufeng Guo:
Step thickness drift region automatic design of SOI LDMOS using physics-inspired constrained simulated annealing algorithm. Microelectron. J. 153: 106410 (2024) - [j1]Jing Chen, Jiahao Wu, Wei Du, Qing Yao, Kemeng Yang, Jun Zhang, Jiafei Yao, Yufeng Guo:
General neural network-based static performance prediction model construction techniques for gate-all-around and planar field effect transistor. Microelectron. J. 154: 106485 (2024) - 2023
- [c1]Yufeng Guo, Kemeng Yang, Jing Chen, Man Li, Zhengfei Jiang, Jiafei Yao, Jun Zhang, Maolin Zhang:
Tradeoff Between the Breakdown Voltage and Specific On-Resistance of SOI RESURF LDMOS. ASICON 2023: 1-4
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