High Aspect Ratio Junctionless InGaAs FinFETs Fabricated Using a Top-Down Approach. - Millar, D. A. J.; Li, X.; Peralagu, U.; Steer, M. J.; Pavey, I. M.; Gaspar, Guilherme; Schmidt, M.; Hurley, Paul K.; Thayne, I. G. (2018)

Impact of impurities, interface traps and contacts on MoS2 MOSFETs: Modelling and experiments. - Mirabelli, Gioele; Gity, Farzan; Monaghan, Scott; Hurley, Paul K.; Duffy, Ray (2017)

Advances of the development of a ferroelectric field-effect transistor on Ge(001). - Ponath, Patrick; Posadas, Agham B.; Ren, Yuan; Wu, Xiaoyu; Lai, Keji; Demkov, Alex; Schmidt, Michael; Duffy, Ray; Hurley, Paul K.; Wang, Jian; Young, Chadwin D.; Vasudevan, Rama K.; et al. (2017)

Direct observation of the generation of breakdown spots in MIM structures under constant voltage stress. - Saura, X.; Moix, D.; Suñé, Jordi; Hurley, Paul K.; Miranda, Enrique (Microelectron. Reliab., 2013)

Exploratory analysis of the breakdown spots spatial distribution in metal gate/high-K/III-V stacks using functional summary statistics. - Miranda, Enrique; O'Connor, Eamon; Hurley, Paul K. (Microelectron. Reliab., 2010)

Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks. - Miranda, Enrique; Martín-Martínez, Javier; O'Connor, Eamon; Hughes, G.; Casey, P.; Cherkaoui, Karim; Monaghan, S.; Long, R.; O'Connell, D.; Hurley, Paul K. (Microelectron. Reliab., 2009)

Extracting the relative dielectric constant for "high-kappa layers" from CV measurements - Errors and error propagation. - Buiu, Octavian; Hall, Steve; Engström, Olof; Raeissi, B.; Lemme, Max Christian; Hurley, Paul K.; Cherkaoui, Karim (Microelectron. Reliab., 2007)

Physical and electrical properties of low dielectric constant self-assembled mesoporous silica thin films. - Farrell, Richard A.; Cherkaoui, Karim; Petkov, Nikolay; Amenitsch, Heinz; Holmes, Justin D.; Hurley, Paul K.; Morris, Michael A. (Microelectron. Reliab., 2007)

Characterisation and passivation of interface defects in (1 0 0)-Si/SiO2/HfO2/TiN gate stacks. - Hurley, Paul K.; Cherkaoui, Karim; McDonnell, S.; Hughes, G.; Groenland, A. W. (Microelectron. Reliab., 2007)

Editorial. - Hurley, Paul K. (Microelectron. Reliab., 2005)

Electrical characterization of HfO2 films obtained by UV assisted injection MOCVD. - Decams, J. M.; Guillon, H.; Jiménez, Carmen; Audier, M.; Sénateur, J. P.; Dubourdieu, C.; Cadix, O.; O'Sullivan, Barry J.; Modreanu, Mircea; Hurley, Paul K. (Microelectron. Reliab., 2005)

Post deposition UV-induced O2 annealing of HfO2 thin films. - Fang, Q.; Liaw, I.; Modreanu, Mircea; Hurley, Paul K.; Boyd, I. W. (Microelectron. Reliab., 2005)

Optical and electrical characterization of hafnium oxide deposited by MOCVD. - Lu, Y.; Buiu, Octavian; Hall, Steve; Hurley, Paul K. (Microelectron. Reliab., 2005)

Flat band voltage shift and oxide properties after rapid thermal annealing. - O'Sullivan, Barry J.; Hurley, Paul K.; Cubaynes, F. N.; Stolk, P. A.; Widdershoven, F. P. (Microelectron. Reliab., 2001)