13.3 A 280-Layer 1Tb 4b/cell 3D-NAND Flash Memory with a 28.5Gb/mm2 Areal Density and a 3.2GB/s High-Speed IO Rate - Wontaeck Jung; Hyunggon Kim; Do-Bin Kim; Tae-Hyun Kim; Nam-Hee Lee; Dongjin Shin; Minyoung Kim; Youngsik Rho; Hun-Jong Lee; Yujin Hyun; Jaeyoung Park; Taekyung Kim; et al. (IEEE International Solid-State Circuits Conference, ISSCC 2024, San Francisco, CA, USA, February 18-22, 2024, 2024)

High-Speed Counter With Novel LFSR State Extension - Hyungjoon Bae; Yujin Hyun; Suchang Kim; Sangsoo Park; Jaeyoung Lee; Boseon Jang; Suyoung Choi; In-Cheol Park (IEEE Trans. Computers, 2023)

Interleaved Local Sorting for Successive Cancellation List Decoding of Polar Codes - Wooyoung Kim; Yujin Hyun; Jaeyoung Lee; In-Cheol Park (IEEE Access, 2021)

Constant-Time Synchronous Binary Counter With Minimal Clock Period - Yujin Hyun; In-Cheol Park (IEEE Trans. Circuits Syst. II Express Briefs, 2021)