7.7 A 768Gb 3b/cell 3D-floating-gate NAND flash memory. - Tanaka, Tomoharu; Helm, Mark; Vali, Tommaso; Ghodsi, Ramin; Kawai, Koichi; Park, Jae-Kwan; Yamada, Shigekazu; Pan, Feng; Einaga, Yuichi; Ghalam, Ali; Tanzawa, Toru; Guo, Jason; et al. (2016)

A 128Gb 3b/cell NAND flash design using 20nm planar-cell technology. - Naso, Giovanni; Botticchio, L.; Castelli, M.; Cerafogli, C.; Cichocki, M.; Conenna, P.; D'Alessandro, Andrea; Santis, Luca De; Cicco, Domenico Di; Francesco, W. Di; Gallese, M. L.; Gallo, Girolamo; et al. (2013)

A 3bit/cell 32Gb NAND flash memory at 34nm with 6MB/s program throughput and with dynamic 2b/cell blocks configuration mode for a program throughput increase up to 13MB/s. - Marotta, G. G.; Macerola, Agostino; D'Alessandro, Andrea; Torsi, A.; Cerafogli, C.; Lattaro, C.; Musilli, C.; Rivers, D.; Sirizotti, Emanuele; Paolini, F.; Imondi, G.; Naso, G.; et al. (2010)

Reliability improvements in 50 nm MLC NAND flash memory using short voltage programming pulses. - Irrera, Fernanda; Piccoli, Ivan; Puzzilli, Giuseppina; Rossini, Massimo; Vali, Tommaso (Microelectron. Reliab., 2009)