Simulations of single event effects on the ferroelectric capacitor-based non-volatile SRAM design. - Wang, Jianjian; Bi, Jinshun; Liu, Gang; Bai, Hua; Xi, Kai; Li, Bo; Majumdar, Sandip; Ji, Lanlong; Liu, Ming; Zhang, Zhangang (Sci. China Inf. Sci., 2021)

Single-event-transient effects in silicon-on-insulator ferroelectric double-gate vertical tunneling field effect transistors. - Tian, Guoliang; Bi, Jinshun; Xu, Gaobo; Xi, Kai; Yang, Xueqin; Majumdar, Sandip; Yin, Huaxiang; Xu, Qiuxia; Wang, Wenwu (Sci. China Inf. Sci., 2020)

Tryst with uncertainty: Efforts of Department of Library and Information Science, University of Gour Banga, Malda, West Bengal, India. - Majumdar, Sandip (Educ. Inf., 2020)

Performance Optimization of FD-SOI Hall Sensors Via 3D TCAD Simulations. - Fan, Linjie; Bi, Jinshun; Xi, Kai; Majumdar, Sandip; Li, Bo (Sensors, 2020)

Total ionizing dose effects on graphene-based charge-trapping memory. - Xi, Kai; Bi, Jinshun; Majumdar, Sandip; Li, Bo; Liu, Jing; Xu, Yannan; Liu, Ming (Sci. China Inf. Sci., 2019)