A Versatile 55-nm SiGe BiCMOS Technology for Wired, Wireless, and Satcom Applications - Pascal Chevalier; Florian Cacho; C. Durand; N. Derrier; V. Millon; Frederic Monsieur; A. Gauthier; P. Billy; Sébastien Fregonese; Thomas Zimmer; H. Audouin; Michel Buczko; et al. (IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2024, Fort Lauderdale, FL, USA, October 27-30, 2024, 2024)

Low-Noise Si/SiGe HBT for LEO Satellite User Terminals in Ku-Ka Bands - A. Gauthier; E. Brezza; A. Montagné; N. Guitard; J. Azevedo Goncalves; Michel Buczko; S. Jan; N. Derrier; Didier Céli; C. Deglise-Favre; J. Ma; H. Audouin; et al. (IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2023, Monterey, CA, USA, October 16-18, 2023, 2023)

Smart Way to Adjust Schottky Barrier Height in 130 nm BiCMOS Process for sub-THz Applications - Vincent Gidel; Frédéric Gianesello; Pascal Chevalier; Grégory Avenier; Nicolas Guitard; Michel Buczko; Cyril Luxey; Guillaume Ducournau (2020 IEEE Radio and Wireless Symposium, RWS 2020, San Antonio, TX, USA, January 26-29, 2020, 2020)

450 GHz f\(_T\) SiGe: C HBT Featuring an Implanted Collector in a 55-nm CMOS Node - Alexis Gauthier; Julien Borrel; Pascal Chevalier; Grégory Avenier; A. Montagné; M. Juhel; R. Duru; L.-R. Clément; C. Borowiak; Michel Buczko; Christophe Gaquière (2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS), San Diego, CA, USA, October 15-17, 2018, 2018)

0.13\(μ\)m SiGe BiCMOS Technology Fully Dedicated to mm-Wave Applications - Grégory Avenier; Malick Diop; Pascal Chevalier; Germaine Troillard; Nicolas Loubet; Julien Bouvier; Linda Depoyan; Nicolas Derrier; Michel Buczko; Cédric Leyris; Samuel Boret; Sébastien Montusclat; et al. (IEEE J. Solid State Circuits, 2009)