Numerical analysis of single-event hardened vertical GaN CAVET with source extension and InGaN charge diversion layer. - Jing, Liang; Wu, Yanjun; Luo, Xingyu; Shen, Jingyu; Hu, Shengdong; Gao, Sheng (Microelectron. J., 2025)

Improvement of reverse conduction characteristic and single event effect for a novel vertical GaN field effect transistor with an integrated MOS-channel diode. - Xie, Xintong; Sun, Shuxiang; Zhao, Zhijia; Zhang, Pengfei; Wei, Jie; Zhou, Xin; Shen, Jingyu; Qiu, Jinpeng; Luo, Xiaorong (Microelectron. J., 2024)

Novel high-voltage GaN CAVET with high threshold voltage and low reverse conduction loss. - Luo, Chengtao; Yang, Cheng; Zhao, Zhijia; Xie, Xintong; Wei, Yuxi; Wei, Jie; Shen, Jingyu; Qiu, Jinpeng; Luo, Xiaorong (Microelectron. J., 2024)

Investigation of dynamic ron stability and hot electrons reliability in normally-off AlGaN/GaN power HEMTs. - Shen, Jingyu; Jing, Liang; Qiu, Jinpeng (Microelectron. J., 2023)

Intent-Driven Mobility Load Balancing. - Ouyang, Ying; Yang, Chungang; Shen, Jingyu; Pang, Lei; Fan, Man (2022)

Joint Power Control and Scheduling for High-Dynamic Multi-Hop UAV Communication: A Robust Mean Field Game. - Li, Tong; Yang, Chungang; Chang, Lizhong; Yang, Lingli; Gong, Peng; Dai, Haoxiang; Shen, Jingyu; Wen, Meng; Han, Zhu (IEEE Access, 2021)

Interactive Artificial Intelligence Meets Game Theory in Next-Generation Communication Networks. - Shen, Jingyu; Yang, Chungang; Li, Tong; Wang, Xinwei; Song, Yanbo; Guizani, Mohsen (IEEE Wirel. Commun., 2021)

Reliability of 200mm E-mode GaN-on-Si Power HEMTs. - Zhou, David C.; Li, William; Shen, Jingyu; Chen, Leilei; Zhao, Thomas; Lin, Kent; Zhang, Martin; Chen, Larry; Chiu, H. C.; Zhang, Jeff; Wong, Roy K.-Y. (2020)

Joint Delay and Energy Management for Cache-Enabled Ultra-Dense Cellular Networks: A Game-Theoretic Learning. - Song, Yanbo; Yang, Chungang; Shen, Jingyu; Chang, Lizhong (2018)