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ORCIDMitiko Miura-Mattausch
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- affiliation: Hiroshima University, Japan
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2020 – today
- 2024
[j34]Aiwen Luo
, Sandip Bhattacharya, Mitiko Miura-Mattausch, Yicong Zhou, Hans Jürgen Mattausch:
Real-Time Surface Identification System for Variable Walking Speeds of Biped Robots. IEEE Embed. Syst. Lett. 16(2): 130-133 (2024)- 2022
- [j33]Tapas K. Maiti, Sunandan Dutta, Yoshihiro Ochi, Mitiko Miura-Mattausch, Hans Jürgen Mattausch:
Electro-mechanical Model and its Application to biped-robot stability with force Sensors. Int. J. Robotics Autom. 37(4) (2022) - 2021
- [j32]Abhishek Kar, Mitiko Miura-Mattausch, Mainak Sengupta, Dondee Navarro, Hideyuki Kikuchihara, Takahiro Iizuka, Hafizur Rahaman, Hans Jürgen Mattausch:
Simulation-Based Power-Loss Optimization of General-Purpose High-Voltage SiC MOSFET Circuit Under High-Frequency Operation. IEEE Access 9: 23786-23794 (2021) - [c33]Hideyuki Kikuchihara, Mitiko Miura-Mattausch, Takeshi Mizoguchi, Hajime Nagase, Makoto Hashimoto, Yusuke Kawaguchi, Hans Jürgen Mattausch:
Modeling of SJ-MOSFET for High-Voltage Applications with Inclusion of Carrier Dynamics during Switching. ISDCS 2021: 1-4 - [c32]Mitiko Miura-Mattausch, Hideyuki Kikuchihara, Hans Jürgen Mattausch:
Model Development for Robust Design of SOI-MOSFET Circuits used in Radiative Environments. ISDCS 2021: 1-4 - 2020
- [j31]Sandip Bhattacharya, Aiwen Luo, Sunandan Dutta, Mitiko Miura-Mattausch, Hans Jürgen Mattausch:
Force-Sensor-Based Surface Recognition With Surface-Property-Dependent Walking-Speed Adjustment of Humanoid Robot. IEEE Access 8: 169640-169651 (2020) - [j30]Sunandan Dutta, Tapas Kumar Maiti, Mitiko Miura-Mattausch, Yoshihiro Ochi, Naoto Yorino, Hans Jürgen Mattausch:
Analysis of Sensor-Based Real-Time Balancing of Humanoid Robots on Inclined Surfaces. IEEE Access 8: 212327-212338 (2020) - [j29]Sandip Bhattacharya, Sunandan Dutta, Aiwen Luo, Mitiko Miura-Mattausch, Yoshihiro Ochi, Hans Jürgen Mattausch:
Energy Efficiency of Force-Sensor-Controlled Humanoid-Robot Walking on Indoor Surfaces. IEEE Access 8: 227100-227112 (2020) - [j28]Kenshiro Sato, Dondee Navarro, Shinya Sekizaki, Yoshifumi Zoka, Naoto Yorino, Hans Jürgen Mattausch, Mitiko Miura-Mattausch:
Prediction of DC-AC Converter Efficiency Degradation due to Device Aging Using a Compact MOSFET-Aging Model. IEICE Trans. Electron. 103-C(3): 119-126 (2020) - [j27]Sunandan Dutta, Mitiko Miura-Mattausch, Yoshihiro Ochi, Naoto Yorino, Hans Jürgen Mattausch:
Gyro-Sensor-Based Vibration Control for Dynamic Humanoid-Robot Walking on Inclined Surfaces. Sensors 20(24): 7139 (2020) - [c31]Sandip Bhattacharya, Aiwen Luo, Sunandan Dutta, Mitiko Miura-Mattausch, Hans Jürgen Mattausch:
Surface Recognition and Speed Adjustment of Humanoid Robot Using External Control Circuit. ISDCS 2020: 1-4 - [c30]Soumajit Ghosh, Mitiko Miura-Mattausch, Takahiro Iizuka, Hideyuki Kikuchihara, Hafizur Rahaman, Hans Jürgen Mattausch:
History Effect on Circuit Performance of SOI-MOSFETs. ISDCS 2020: 1-5 - [c29]Fernando Ávila Herrera, Mitiko Miura-Mattausch, Takahiro Iizuka, Hideyuki Kikuchihara, Yoko Hirano, Hans Jürgen Mattausch:
Modeling of Short-Channel Effect on Multi-Gate MOSFETs for Circuit Simulation. ISDCS 2020: 1-4 - [c28]Hans Jürgen Mattausch, Aiwen Luo, Sunandan Dutta, Sunandan Dutta, Tapas K. Maiti, Mitiko Miura-Mattausch:
Force-Sensor-Based Walking-Environment Recognition of Biped Robots. ISDCS 2020: 1-4
2010 – 2019
- 2019
- [j26]Sandip Bhattacharya, Aiwen Luo, Tapas Kumar Maiti, Sunandan Dutta, Yoshihiro Ochi, Mitiko Miura-Mattausch, Hans Jürgen Mattausch:
Surface-Property Recognition With Force Sensors for Stable Walking of Humanoid Robot. IEEE Access 7: 146443-146456 (2019) - [j25]Arnab Mukhopadhyay, Tapas Kumar Maiti, Sandip Bhattacharya, Takahiro Iizuka, Hideyuki Kikuchihara, Mitiko Miura-Mattausch, Hafizur Rahaman, Sadayuki Yoshitomi, Dondee Navarro, Hans Jürgen Mattausch:
Prevention of Highly Power-Efficient Circuits due to Short-Channel Effects in MOSFETs. IEICE Trans. Electron. 102-C(6): 487-494 (2019) - [j24]Nezam Rohbani, Hiroaki Gau, Sara Mohammadinejad, Tapas Kumar Maiti, Dondee Navarro, Mitiko Miura-Mattausch, Hans Jürgen Mattausch, Hirotaka Takatsuka:
Power Reduction and BTI Mitigation of Data-Cache Memory Based on the Storage Management of Narrow-Width Values. IEEE Trans. Very Large Scale Integr. Syst. 27(7): 1675-1684 (2019) - [c27]Aiwen Luo, Sandip Bhattacharya, Tapas Kumar Maiti, Sunandan Dutta, Yoshihiro Ochi, Mitiko Miura-Mattausch, Hans Jürgen Mattausch:
Dynamic Pattern-Recognition-Based Walking-Speed Adjustment for Stable Biped-Robot Movement under Changing Surface Conditions. GCCE 2019: 600-601 - [c26]Nezam Rohbani, Tapas Kumar Maiti, Dondee Navarro, Mitiko Miura-Mattausch, Hans Jürgen Mattausch, Hirotaka Takatsuka:
NVDL-Cache: Narrow-Width Value Aware Variable Delay Low-Power Data Cache. ICCD 2019: 264-272 - [c25]Sunandan Dutta, Tapas K. Maiti, Yoshihiro Ochi, Mitiko Miura-Mattausch, Sandip Bhattacharya, Naoto Yorino, Hans Jürgen Mattausch:
Stability Analysis of Humanoid Robots with Gyro Sensors Subjected to External Push Forces. ISDCS 2019: 1-4 - [c24]Soumajit Ghosh, Vishal Roshan, Avishek Dutta, Subhajit Das, Tapas Kumar Maiti, Mitiko Miura-Mattausch, Hafizur Rahaman:
Optimization of DC-DC Power Converter Design with Second Generation HiSIM_HV Model. ISDCS 2019: 1-5 - [c23]Takahiro Iizuka, Hiroyuki Hashigami, Mitiko Miura-Mattausch, Hans Jürgen Mattausch:
Validation on Duality in Impact-ionization Carrier Generation at the Onset of Snapback in Power MOSFETs. ISDCS 2019: 1-4 - [c22]Tapas K. Maiti, Sunandan Dutta, Yoshihiro Ochi, Mitiko Miura-Mattausch, Sandip Bhattacharya, Hans Jürgen Mattausch:
Power Consumption Estimation of Biped Robot During Walking. ISDCS 2019: 1-4 - [c21]Yosuke Miyaoku, Mitiko Miura-Mattausch, Akihiro Tone, Hans Jürgen Mattausch, Kai Matsuura, Daisaku Ikoma:
Analysis of IGBT Charging/Discharging Mechanism for Accurate Compact Modeling. ISDCS 2019: 1-4 - [c20]Yasuhiro Shintaku, Shota Kusu, Teppei Miyoshi, Gaku Suzuki, Kohkichi Konno, Mitiko Miura-Mattausch:
Modeling of Photocurrent Response for Integrated Optoelectric Circuit Simulation. ISDCS 2019: 1-4 - [c19]Takao Yamamoto, Yukiya Fukunaga, Daisaku Ikoma, Mitiko Miura-Mattausch, Dondee Navarro, Hans Jürgen Mattausch:
Analysis of Embedded-Diode Performance in MOSFET under Switching Condition. ISDCS 2019: 1-4 - 2018
- [j23]Mitiko Miura-Mattausch, Hidenori Miyamoto, Hideyuki Kikuchihara, Tapas K. Maiti, Nezam Rohbani, Dondee Navarro, Hans Jürgen Mattausch:
Compact modeling of dynamic trap density evolution for predicting circuit-performance aging. Microelectron. Reliab. 80: 164-175 (2018) - [c18]Mitiko Miura-Mattausch, Hideyuki Kikuchihara, Tahahiro Kajiwara, Yuta Tanimoto, Atsushi Saito, Takahiro Iizuka, Dondee Navarro, Hans Jürgen Mattausch:
Compact Modeling for Power Efficient Circuit Design. ESSDERC 2018: 234-237 - [c17]Sandip Bhattacharya, Aiwen Luo, Tapas K. Maiti, Sunandan Dutta, Mitiko Miura-Mattausch, Hans Jürgen Mattausch:
Fast Recognition and Control of Walking Mode for Humanoid Robot Based on Pressure Sensors and Nearest Neighbor Search. ISPACS 2018: 331-334 - [c16]Sunandan Dutta, Tapas K. Maiti, Yoshihiro Ochi, Mitiko Miura-Mattausch, Sandip Bhattacharya, Dondee Navarro, Naoto Yorino, Hans Jürgen Mattausch:
Self-controlled walking robot with gyro sensor network for stable movement on non-smooth surfaces. SIMPAR 2018: 137-143 - 2017
- [j22]Takeshi Mizoguchi, Toshiyuki Naka, Yuta Tanimoto, Yasuhiro Okada, Wataru Saito, Mitiko Miura-Mattausch, Hans Jürgen Mattausch:
Modeling of Field-Plate Effect on Gallium-Nitride-Based High Electron Mobility Transistors for High-Power Applications. IEICE Trans. Electron. 100-C(3): 321-328 (2017) - [c15]Tapas K. Maiti, Dondee Navarro, Mitiko Miura-Mattausch, Hans Jürgen Mattausch:
Compact modeling approach for electro-mechanical system simulation. ASICON 2017: 981-984 - [c14]Mitiko Miura-Mattausch, Hidenori Miyamoto, Hideyuki Kikuchihara, Dondee Navarro, Tapas K. Maiti, Nezam Rohbani, C. Ma, Hans Jürgen Mattausch, A. Schiffmann, Alexander Steinmair, Ehrenfried Seebacher:
Modeling of dynamic trap density increase for aging simulation of any MOSFET circuits. ESSDERC 2017: 192-195 - 2016
- [j21]Lei Chen, Tapas Kumar Maiti, Hidenori Miyamoto, Mitiko Miura-Mattausch, Hans Jürgen Mattausch:
Actuator-Control Circuit Based on OTFTs and Flow-Rate Estimation for an All-Organic Fluid Pump. IEICE Trans. Fundam. Electron. Commun. Comput. Sci. 99-A(4): 798-805 (2016) - [j20]Atsushi Saito, Kenshiro Sato, Yuta Tanimoto, Kai Matsuura, Yutaka Sasaki, Mitiko Miura-Mattausch, Hans Jürgen Mattausch, Yoshifumi Zoka:
Efficiency Analysis of SiC-MOSFET-Based Bidirectional Isolated DC/DC Converters. IEICE Trans. Electron. 99-C(9): 1065-1070 (2016) - 2015
- [c13]Tapas Kumar Maiti, Lei Chen, Hidenori Miyamoto, Mitiko Miura-Mattausch, Hans Jürgen Mattausch:
Mixed-domain compact modeling framework for fluid flow driven by electrostatic organic actuators. ESSDERC 2015: 52-55 - 2014
- [j19]Takao Yamamoto, Masataka Miyake, Uwe Feldmann, Hans Jürgen Mattausch, Mitiko Miura-Mattausch:
Compact Modeling of Injection Enhanced Insulated Gate Bipolar Transistor Valid for Optimization of Switching Frequency. IEICE Trans. Electron. 97-C(10): 1021-1027 (2014) - 2013
- [j18]Takahiro Iizuka, Kenji Fukushima, Akihiro Tanaka, Hideyuki Kikuchihara, Masataka Miyake, Hans Jürgen Mattausch, Mitiko Miura-Mattausch:
Modeling of Trench-Gate Type HV-MOSFETs for Circuit Simulation. IEICE Trans. Electron. 96-C(5): 744-751 (2013) - [j17]Chenyue Ma, Hans Jürgen Mattausch, Masataka Miyake, Takahiro Iizuka, Kazuya Matsuzawa, Seiichiro Yamaguchi, Teruhiko Hoshida, Akinori Kinoshita, Takahiko Arakawa, Jin He, Mitiko Miura-Mattausch:
Modeling of NBTI Stress Induced Hole-Trapping and Interface-State-Generation Mechanisms under a Wide Range of Bias Conditions. IEICE Trans. Electron. 96-C(10): 1339-1347 (2013) - 2012
- [j16]Masataka Miyake, Junichi Nakashima, Mitiko Miura-Mattausch:
Compact Modeling of the p-i-n Diode Reverse Recovery Effect Valid for both Low and High Current-Density Conditions. IEICE Trans. Electron. 95-C(10): 1682-1688 (2012) - [j15]Takahiro Iizuka, Takashi Sakuda, Yasunori Oritsuki, Akihiro Tanaka, Masataka Miyake, Hideyuki Kikuchihara, Uwe Feldmann, Hans Jürgen Mattausch, Mitiko Miura-Mattausch:
Compact Modeling of Expansion Effects in LDMOS. IEICE Trans. Electron. 95-C(11): 1817-1823 (2012) - 2011
- [j14]Norio Sadachika, Shu Mimura, Akihiro Yumisaki, Koh Johguchi, Akihiro Kaya, Mitiko Miura-Mattausch, Hans Jürgen Mattausch:
Prediction of Circuit-Performance Variations from Technology Variations for Reliable 100 nm SOC Circuit Design. IEICE Trans. Electron. 94-C(3): 361-367 (2011)
2000 – 2009
- 2009
- [j13]Ryosuke Inagaki, Norio Sadachika, Mitiko Miura-Mattausch, Yasuaki Inoue:
A PN Junction-Current Model for Advanced MOSFET Technologies. IEICE Trans. Fundam. Electron. Commun. Comput. Sci. 92-A(4): 983-989 (2009) - [j12]Masataka Miyake, Daisuke Hori, Norio Sadachika, Uwe Feldmann, Mitiko Miura-Mattausch, Hans Jürgen Mattausch, Takahiro Iizuka, Kazuya Matsuzawa, Yasuyuki Sahara, Teruhiko Hoshida, Toshiro Tsukada:
Non-Quasi-Static Carrier Dynamics of MOSFETs under Low-Voltage Operation. IEICE Trans. Electron. 92-C(5): 608-615 (2009) - [j11]Masataka Miyake, Daisuke Hori, Norio Sadachika, Uwe Feldmann, Mitiko Miura-Mattausch, Hans Jürgen Mattausch, Tatsuya Ohguro, Takahiro Iizuka, Masahiko Taguchi, Shunsuke Miyamoto:
Degraded Frequency-Tuning Range and Oscillation Amplitude of LC-VCOs due to the Nonquasi-Static Effect in MOS Varactors. IEICE Trans. Electron. 92-C(6): 777-784 (2009) - [j10]Ryosuke Inagaki, Norio Sadachika, Dondee Navarro, Mitiko Miura-Mattausch, Yasuaki Inoue:
A GIDL-Current Model for Advanced MOSFET Technologies without Binning. Inf. Media Technol. 4(2): 240-249 (2009) - [j9]Ryosuke Inagaki, Norio Sadachika, Dondee Navarro, Mitiko Miura-Mattausch, Yasuaki Inoue:
A GIDL-Current Model for Advanced MOSFET Technologies without Binning. IPSJ Trans. Syst. LSI Des. Methodol. 2: 93-102 (2009) - 2008
- [b1]Mitiko Miura-Mattausch, Hans Jürgen Mattausch, Tatsuya Ezaki:
The Physics and Modeling of Mosfets - Surface-Potential Model HiSIM. International Series on Advances in Solid State Electronics and Technology, World Scientific 2008, ISBN 978-981-256-864-9, pp. 1-350 - [j8]Norio Sadachika, Takahiro Murakami, Hideki Oka, Ryou Tanabe, Hans Jürgen Mattausch, Mitiko Miura-Mattausch:
Compact Double-Gate Metal-Oxide-Semiconductor Field Effect Transistor Model for Device/Circuit Optimization. IEICE Trans. Electron. 91-C(8): 1379-1381 (2008) - [j7]Tatsuya Ezaki, Dondee Navarro, Youichi Takeda, Norio Sadachika, Gaku Suzuki, Mitiko Miura-Mattausch, Hans Jürgen Mattausch, Tatsuya Ohguro, Takahiro Iizuka, Masahiko Taguchi, Shigetaka Kumashiro, Shunsuke Miyamoto:
Non-quasi-static approach with surface-potential-based MOSFET model HiSIM for RF circuit simulations. Math. Comput. Simul. 79(4): 1096-1106 (2008) - 2007
- [j6]Yoshioki Isobe, Kiyohito Hara, Dondee Navarro, Youichi Takeda, Tatsuya Ezaki, Mitiko Miura-Mattausch:
Shot Noise Modeling in Metal-Oxide-Semiconductor Field Effect Transistors under Sub-Threshold Condition. IEICE Trans. Electron. 90-C(4): 885-894 (2007) - 2005
- [j5]Shizunori Matsumoto, Hiroaki Ueno, Satoshi Hosokawa, Toshihiko Kitamura, Mitiko Miura-Mattausch, Hans Jürgen Mattausch, Tatsuya Ohguro, Shigetaka Kumashiro, Tetsuya Yamaguchi, Kyoji Yamashita, Noriaki Nakayama:
1/f-Noise Characteristics in 100 nm-MOSFETs and Its Modeling for Circuit Simulation. IEICE Trans. Electron. 88-C(2): 247-254 (2005) - [j4]Dondee Navarro, Takeshi Mizoguchi, Masami Suetake, Kazuya Hisamitsu, Hiroaki Ueno, Mitiko Miura-Mattausch, Hans Jürgen Mattausch, Shigetaka Kumashiro, Tetsuya Yamaguchi, Kyoji Yamashita, Noriaki Nakayama:
A Compact Model of the Pinch-off Region of 100 nm MOSFETs Based on the Surface-Potential. IEICE Trans. Electron. 88-C(5): 1079-1086 (2005) - [c12]Masahiro Murakawa, Mitiko Miura-Mattausch, Tetsuya Higuchi:
Towards automatic parameter extraction for surface-potential-based MOSFET models with the genetic algorithm. ASP-DAC 2005: 204-207 - [c11]Youichi Takeda, Dondee Navarro, Shingo Chiba, Mitiko Miura-Mattausch, Hans Jürgen Mattausch, Tatsuya Ohguro, Takahiro Iizuka, Masahiko Taguchi, Shigetaka Kumashiro, Shunsuke Miyamoto:
MOSFET harmonic distortion analysis up to the non-quasi-static frequency regime. CICC 2005: 827-830 - 2004
- [c10]Mitiko Miura-Mattausch:
MOSFET modeling for RF-CMOS design. ASP-DAC 2004: 482-490 - 2003
- [c9]Kazuya Hisamitsu, Hiroaki Ueno, Masayasu Tanaka, Daisuke Kitamaru, Mitiko Miura-Mattausch, Hans Jürgen Mattausch, Shigetaka Kumashiro, Tetsuya Yamaguchi, Kyoji Yamashita, Noriaki Nakayama:
Temperature-independence-point properties for 0.1μm-scale pocket-implant technologies and the impact on circuit design. ASP-DAC 2003: 179-183 - 2002
- [j3]Mitiko Miura-Mattausch, Hiroaki Ueno, Hans Jürgen Mattausch, Shigetaka Kumashiro, Tetsuya Yamaguchi, Kyoji Yamashita, Noriaki Nakayama:
Circuit Simulation Models for Coming MOSFET Generations. IEICE Trans. Fundam. Electron. Commun. Comput. Sci. 85-A(4): 740-748 (2002) - 2001
- [c8]D. Miyawaki, Shizunori Matsumoto, Hans Jürgen Mattausch, S. Ooshiro, Masami Suetake, Mitiko Miura-Mattausch, Shigetaka Kumashiro, Tetsuya Yamaguchi, Kyoji Yamashita, Noriaki Nakayama:
Correlation method of circuit-performance and technology fluctuations for improved design reliability. ASP-DAC 2001: 39-44 - [c7]Shizunori Matsumoto, Hans Jürgen Mattausch, S. Ooshiro, Y. Tatsumi, Mitiko Miura-Mattausch, Shigetaka Kumashiro, Terufumi Yamaguchi, Kyoji Yamashita, Noriaki Nakayama:
Test-circuit-based extraction of inter- and intra-chip MOSFET-performance variations for analog-design reliability. CICC 2001: 357-360 - 2000
- [c6]Masayasu Tanaka, N. Tokida, T. Okagaki, Mitiko Miura-Mattausch, Walter Hansch, Hans Jürgen Mattausch:
High performance of short-channel MOSFETs due to an elevated central-channel doping. ASP-DAC 2000: 365-370
1990 – 1999
- 1998
- [c5]Morikazu Tsuno, Masato Suga, Masayasu Tanaka, Kentaro Shibahara, Mitiko Miura-Mattausch, Masataka Hirose:
Reliable Threshold Voltage Determination for Sub-0.1µm Gate Length MOSFET's. ASP-DAC 1998: 111-116 - [c4]Ute Feldmann, Ronald Kakoschke, Mitiko Miura-Mattausch, G. Schraud:
Concurrent Technology, Device, and Circuit Development for EEPROMs. ASP-DAC 1998: 123-128 - 1996
- [j2]Mitiko Miura-Mattausch, Ute Feldmann, Alexander Rahm, Michael Bollu, Dominique Savignac:
Unified complete MOSFET model for analysis of digital and analog circuits. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 15(1): 1-7 (1996) - 1995
- [c3]Ute Feldmann, Alexander Rahm, Mitiko Miura-Mattausch:
Benchmarking MOS Transistor Models with Respect to Capacitances and Charges for Analog Applications. ISCAS 1995: 1352-1355 - 1994
- [j1]Mitiko Miura-Mattausch:
Analytical MOSFET model for quarter micron technologies. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 13(5): 610-615 (1994) - [c2]Mitiko Miura-Mattausch, Ute Feldmann, Alexander Rahm, Michael Bollu, Dominique Savignac:
Unified complete MOSFET model for analysis of digital and analog circuits. ICCAD 1994: 264-267 - [c1]Mitiko Miura-Mattausch, Alexander Rahm, Michael Bollu, Ute Feldmann, Dominique Savignac:
A Novel Consistent MOSFET Model for CAD Application with Reduced Calculation Time. ISCAS 1994: 391-394
Coauthor Index
Tapas K. Maiti
aka: Tapas Kumar Maiti
aka: Tapas Kumar Maiti
[j34] [j33] [j32] [c33] [c32] [j31] [j30] [j29] [j28] [j27] [c31] [c30] [c29] [c28] [j26] [j25] [j24] [c27] [c26] [c25] [c23] [c22] [c21] [c19] [j23] [c18] [c17] [c16] [j22] [c15] [c14] [j21] [j20] [c13] [j19] [j18] [j17] [j15] [j14] [j12] [j11] [b1] [j8] [j7] [j5] [j4] [c11] [c9] [j3] [c8] [c7] [c6]
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