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2020 – today
- 2022
[j30]Mengxuan Yang, Qianqian Huang, Chang Su, Liang Chen, Yangyuan Wang, Ru Huang:
Experimental investigation of the gate voltage range of negative differential capacitance in ferroelectric transistors. Sci. China Inf. Sci. 65(6): 1-2 (2022)- [j29]Mengxuan Yang, Qianqian Huang, Kaifeng Wang, Chang Su, Liang Chen, Yangyuan Wang, Ru Huang:
Physical investigation of subthreshold swing degradation behavior in negative capacitance FET. Sci. China Inf. Sci. 65(6): 1-6 (2022) - 2021
- [j28]Zhixuan Wang
, Hao Zhang, Yihan Zhang, Linxiao Shen, Jiayoon Ru, Haitao Fan, Zhichao Tan, Yangyuan Wang, Le Ye, Ru Huang:
A Software-Defined Always-On System With 57-75-nW Wake-Up Function Using Asynchronous Clock-Free Pipelined Event-Driven Architecture and Time-Shielding Level-Crossing ADC. IEEE J. Solid State Circuits 56(9): 2804-2816 (2021) - [j27]Zhixuan Wang, Ying Liu, Peng Zhou, Zhichao Tan, Haitao Fan, Yihan Zhang, Linxiao Shen, Jiayoon Ru, Yangyuan Wang, Le Ye, Ru Huang:
A 148-nW Reconfigurable Event-Driven Intelligent Wake-Up System for AIoT Nodes Using an Asynchronous Pulse-Based Feature Extractor and a Convolutional Neural Network. IEEE J. Solid State Circuits 56(11): 3274-3288 (2021) - [j26]Zhixuan Wang, Le Ye, Qianqian Huang, Kaixuan Du, Zhichao Tan, Yangyuan Wang, Ru Huang:
Ultra-Low-Power and Performance-Improved Logic Circuit Using Hybrid TFET-MOSFET Standard Cells Topologies and Optimized Digital Front-End Process. IEEE Trans. Circuits Syst. I Regul. Pap. 68(3): 1160-1170 (2021) - [j25]Zhixuan Wang, Le Ye, Qianqian Huang, Yangyuan Wang, Ru Huang:
Re-Assessment of Steep-Slope Device Design From a Circuit-Level Perspective Using Novel Evaluation Criteria and Model-Less Method. IEEE Trans. Circuits Syst. I Regul. Pap. 68(4): 1624-1635 (2021) - [j24]Le Ye, Zhixuan Wang, Ying Liu, Peiyu Chen, Heyi Li, Hao Zhang, Meng Wu, Wei He, Linxiao Shen, Yihan Zhang, Zhichao Tan, Yangyuan Wang, Ru Huang:
The Challenges and Emerging Technologies for Low-Power Artificial Intelligence IoT Systems. IEEE Trans. Circuits Syst. I Regul. Pap. 68(12): 4821-4834 (2021) - [c12]Zhixuan Wang, Le Ye, Ying Liu, Peng Zhou, Zhichao Tan, Haitao Fan, Yihan Zhang, Jiayoon Ru, Yangyuan Wang, Ru Huang:
12.1 A 148nW General-Purpose Event-Driven Intelligent Wake-Up Chip for AIoT Devices Using Asynchronous Spike-Based Feature Extractor and Convolutional Neural Network. ISSCC 2021: 436-438 - 2020
- [c11]Zhixuan Wang, Le Ye, Hao Zhanq, Jiayoon Ru, Haitao Fan, Yangyuan Wang, Ru Huang:
20.2 A 57nW Software-Defined Always-On Wake-Up Chip for IoT Devices with Asynchronous Pipelined Event-Driven Architecture and Time-Shielding Level-Crossing ADC. ISSCC 2020: 314-316
2010 – 2019
- 2019
- [c10]Zhixuan Wang, Yuan Zhong, Cheng Chen, Le Ye, Qianqian Huang, Libo Yang, Yangyuan Wang, Ru Huang:
Ultra-Low Power Hybrid TFET-MOSFET Topologies for Standard Logic Cells with Improved Comprehensive Performance. ISCAS 2019: 1-5 - [i1]Zhe Zhang, Runsheng Wang, Cheng Chen, Qianqian Huang, Yangyuan Wang, Cheng Hu, Dehuang Wu, Joddy Wang, Ru Huang:
New-Generation Design-Technology Co-Optimization (DTCO): Machine-Learning Assisted Modeling Framework. CoRR abs/1904.10269 (2019) - 2018
- [j23]Shaofeng Guo, Runsheng Wang, Pengpeng Ren, Changze Liu, Mulong Luo, Xiaobo Jiang, Yangyuan Wang, Ru Huang:
Investigation on NBTI-induced dynamic variability in nanoscale CMOS devices: Modeling, experimental evidence, and impact on circuits. Microelectron. Reliab. 81: 101-111 (2018) - [c9]Shaofeng Guo, Zhenghan Lin, Runsheng Wang, Zexuan Zhang, Zhe Zhang, Yangyuan Wang, Ru Huang:
Investigation on the amplitude coupling effect of random telegraph noise (RTN) in nanoscale FinFETs. IRPS 2018: 6-1 - [c8]Shaofeng Guo, Zhenghan Lin, Runsheng Wang, Dongyuan Mao, Yangyuan Wang, Ru Huang:
Evaluation of SRAM Vmin shift induced by random telegraph noise (RTN): physical understanding and prediction method. ISCAS 2018: 1-4 - 2017
- [c7]Shaofeng Guo, Runsheng Wang, Zhuoqing Yu, Peng Hao, Pengpeng Ren, Yangyuan Wang, Siyu Liao, Chunyi Huang, Tianlei Guo, Alvin Chen, Jushan Xie, Ru Huang:
Towards reliability-aware circuit design in nanoscale FinFET technology: - New-generation aging model and circuit reliability simulator. ICCAD 2017: 780-785 - 2016
- [c6]Jinfeng Kang, Peng Huang, Zhe Chen, Yudi Zhao, Chen Liu, Runze Han, Lifeng Liu, Xiaoyan Liu, Yangyuan Wang, Bin Gao:
Physical understanding and optimization of resistive switching characteristics in oxide-RRAM. ESSDERC 2016: 154-159 - 2015
- [j22]Yixiao Wang, Le Ye, Huailin Liao, Ru Huang, Yangyuan Wang:
Highly Reconfigurable Analog Baseband for Multistandard Wireless Receivers in 65-nm CMOS. IEEE Trans. Circuits Syst. II Express Briefs 62-II(3): 296-300 (2015) - 2014
- [j21]Long Chen, Yixiao Wang, Chuan Wang, Jiayi Wang, Congyin Shi, Xuankai Weng, Le Ye, Junhua Liu, Huailin Liao, Yangyuan Wang:
A 4.2 mm2 72 mW Multistandard Direct-Conversion DTV Tuner in 65 nm CMOS. IEEE Trans. Circuits Syst. I Regul. Pap. 61-I(1): 280-292 (2014) - [c5]Ru Huang, Yimao Cai, Yefan Liu, Wenliang Bai, Yongbian Kuang, Yangyuan Wang:
Resistive switching in organic memory devices for flexible applications. ISCAS 2014: 838-841 - 2013
- [j20]Runsheng Wang, Tao Yu, Ru Huang, Yangyuan Wang:
Impacts of short-channel effects on the random threshold voltage variation in nanoscale transistors. Sci. China Inf. Sci. 56(6): 1-7 (2013) - [j19]Zhan Zhan, Qianqian Huang, Ru Huang, Wenzhe Jiang, Yangyuan Wang:
A comb-gate silicon tunneling field effect transistor with improved on-state current. Sci. China Inf. Sci. 56(7): 1-6 (2013) - [j18]Le Ye, Congyin Shi, Huailin Liao, Ru Huang, Yangyuan Wang:
Highly Power-Efficient Active-RC Filters With Wide Bandwidth-Range Using Low-Gain Push-Pull Opamps. IEEE Trans. Circuits Syst. I Regul. Pap. 60-I(1): 95-107 (2013) - 2012
- [j17]Jiapeng Zheng, Wei Li, Xueqing Lu, Yuhua Cheng, Yangyuan Wang:
A low power and small area all digital delay-locked loop based on ring oscillator architecture. Sci. China Inf. Sci. 55(2): 453-460 (2012) - [j16]Lingjuan Wu, Jennifer Trezzo, Diba Mirza, Paul L. D. Roberts, Jules S. Jaffe, Yangyuan Wang, Ryan Kastner:
Designing an Adaptive Acoustic Modem for Underwater Sensor Networks. IEEE Embed. Syst. Lett. 4(1): 1-4 (2012) - [j15]Zhihua Dong, Jinyan Wang, Cheng P. Wen, Shenghou Liu, Rumin Gong, Min Yu, Yilong Hao, Fujun Xu, Bo Shen, Yangyuan Wang:
High temperature induced failure in Ti/Al/Ni/Au Ohmic contacts on AlGaN/GaN heterostructure. Microelectron. Reliab. 52(2): 434-438 (2012) - 2011
- [j14]Yangyuan Wang:
The driving force for development of IC and system in future: Reducing the power consumption and improving the ratio of performance to power consumption. Sci. China Inf. Sci. 54(5): 915-935 (2011) - [j13]Yandong He, Xing Zhang, Yangyuan Wang:
Process optimization of plasma nitridation SiON for 65 nm node gate dielectrics. Sci. China Inf. Sci. 54(12): 2673-2679 (2011) - [j12]Ru Huang, Runsheng Wang, Changze Liu, Liangliang Zhang, Jing Zhuge, Yu Tao, Jinbin Zou, Yuchao Liu, Yangyuan Wang:
HCI and NBTI induced degradation in gate-all-around silicon nanowire transistors. Microelectron. Reliab. 51(9-11): 1515-1520 (2011) - [c4]Ru Huang, Runsheng Wang, Jing Zhuge, Changze Liu, Tao Yu, Liangliang Zhang, Xin Huang, Yujie Ai, Jinbin Zou, Yuchao Liu, Jiewen Fan, Huailin Liao, Yangyuan Wang:
Characterization and analysis of gate-all-around Si nanowire transistors for extreme scaling. CICC 2011: 1-8 - 2010
- [j11]Ming Li, Jinfeng Kang, Yangyuan Wang:
A novel voltage-type sense amplifier for low-power nonvolatile memories. Sci. China Inf. Sci. 53(8): 1676-1681 (2010) - [j10]Wei Liu, Wei (Ruth) Li, Peng Ren, Chinglong Lin, Shengdong Zhang, Yangyuan Wang:
A PVT Tolerant 10 to 500 MHz All-Digital Phase-Locked Loop With Coupled TDC and DCO. IEEE J. Solid State Circuits 45(2): 314-321 (2010) - [j9]Le Ye, Huailin Liao, Fei Song, Jiang Chen, Chen Li, Jinshu Zhao, Ruiqiang Liu, Chuan Wang, Congyin Shi, Junhua Liu, Ru Huang, Yangyuan Wang:
A Single-Chip CMOS UHF RFID Reader Transceiver for Chinese Mobile Applications. IEEE J. Solid State Circuits 45(7): 1316-1329 (2010) - [j8]Jian Wang, Wenhua Wang, Ru Huang, Yunpeng Pei, Shoubin Xue, Xin'an Wang, Chunhui Fan, Yangyuan Wang:
Deteriorated radiation effects impact on the characteristics of MOS transistors with multi-finger configuration. Microelectron. Reliab. 50(8): 1094-1097 (2010)
2000 – 2009
- 2009
- [j7]Ru Huang, HanMing Wu, Jinfeng Kang, DeYuan Xiao, XueLong Shi, Xia An, Yu Tian, Runsheng Wang, Liangliang Zhang, Xing Zhang, Yangyuan Wang:
Challenges of 22 nm and beyond CMOS technology. Sci. China Ser. F Inf. Sci. 52(9): 1491-1533 (2009) - 2008
- [j6]Yangyuan Wang, Xing Zhang, Xiaoyan Liu, Ru Huang:
Novel devices and process for 32 nm CMOS technology and beyond. Sci. China Ser. F Inf. Sci. 51(6): 743-755 (2008) - 2007
- [c3]Teng Lin, Jianhua Feng, Yangyuan Wang:
A New Test Data Compression Scheme for Multi-scan Designs. ISVLSI 2007: 179-185 - 2006
- [j5]Fengyi (Fred) Huang, Jingxue Lu, Nan Jiang, Xiaowen Zhang, Wengang Wu, Yangyuan Wang:
Frequency-Independent Asymmetric Double-$pi $Equivalent Circuit for On-Chip Spiral Inductors: Physics-Based Modeling and Parameter Extraction. IEEE J. Solid State Circuits 41(10): 2272-2283 (2006) - [c2]Jin He, Xing Zhang, Ganggang Zhang, Mansun Chan, Yangyuan Wang:
A Complete Carrier-Based Non-Charge-Sheet Analytic Theory for Nano-Scale Undoped Surrounding-Gate MOSFETs. ISQED 2006: 115-120 - [c1]Jin He, Xing Zhang, Ganggang Zhang, Yangyuan Wang:
A Carrier-Based Analytic Model for Undoped (Lightly Doped) Ultra-Thin-Body Silicon-on-Insulator (UTB-SOI) MOSFETs. ISQED 2006: 127-132 - 2003
- [j4]Ru Huang, Jinyan Wang, Jin He, Min Yu, Xing Zhang, Yangyuan Wang:
Hot carrier degradation behavior in SOI dynamic-threshold-voltage nMOSFET's (n-DTMOSFET) measured by gated-diode configuration. Microelectron. Reliab. 43(5): 707-711 (2003) - 2002
- [j3]Jin He, Xing Zhang, Ru Huang, Yangyuan Wang:
Application of forward gated-diode R-G current method in extracting F-N stress-induced interface traps in SOI NMOSFETs. Microelectron. Reliab. 42(1): 145-148 (2002) - 2001
- [j2]Ru Huang, Weihai Bu, Xing Zhang, Yangyuan Wang:
Quasi-two-dimensional subthreshold current model of deep submicrometer SOI drive-in gate controlled hybrid transistors with lateral non-uniform doping profile. Sci. China Ser. F Inf. Sci. 44(1): 60-67 (2001) - [j1]Jin He, Xing Zhang, Ru Huang, Yangyuan Wang:
Extraction of the lateral distribution of interface traps in MOSFETs by a novel combined gated-diode technique. Microelectron. Reliab. 41(12): 1953-1957 (2001)
Coauthor Index
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