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2020 – today
- 2024
[j13]Taehun Kim
, Hayeon Jeong, Seong-Jin Jang, Jaeyong Lee, Changkun Park:
Ka-Band CMOS Power Amplifier Using Stacked Structure With Cascode-Like Operation. IEEE Trans. Circuits Syst. II Express Briefs 71(4): 1949-1953 (2024)- 2023
- [j12]Seong-Jin Jang, Hui Dong Lee, Bonghyuk Park, Seunghyun Jang, Sunwoo Kong, Changkun Park:
Design of CMOS-Based Unit Channel of Beamforming Transceivers for FACS Applications. IEEE Access 11: 140056-140068 (2023)
2010 – 2019
- 2019
- [j11]Young-Ju Kim, Hye-Jung Kwon, Su-Yeon Doo, Min-Su Ahn, Yong-Hun Kim, Yong Jae Lee, Dong-Seok Kang, Sung-Geun Do, Chang-Yong Lee, Gun-hee Cho, Jae-Koo Park, Jae-Sung Kim, Kyung-Bae Park, Seung-Hoon Oh, Sang-Yong Lee, Ji-Hak Yu, Ki-Hun Yu, Chul-Hee Jeon, Sang-Sun Kim, Hyun-Soo Park, Jeong-Woo Lee, Seung-Hyun Cho, Keon-Woo Park, Yong-Jun Kim, Young-Hun Seo, Chang-Ho Shin, ChanYong Lee, Sam-Young Bang, Youn-Sik Park, Seouk-Kyu Choi, Byung-Cheol Kim, Gong-Heum Han, Seung-Jun Bae, Hyuk-Jun Kwon, Jung-Hwan Choi, Young-Soo Sohn, Kwang-Il Park, Seong-Jin Jang, Gyo-Young Jin:
A 16-Gb, 18-Gb/s/pin GDDR6 DRAM With Per-Bit Trainable Single-Ended DFE and PLL-Less Clocking. IEEE J. Solid State Circuits 54(1): 197-209 (2019) - [c28]Kyung-Soo Ha, Chang-Kyo Lee, Dongkeon Lee, Daesik Moon, Jin-Hun Jang, Hyong-Ryol Hwang, Hyung-Joon Chi, Junghwan Park, Seungjun Shin, Dukha Park, Sang-Yun Kim, Sukhyun Lim, Kiwon Park, YeonKyu Choi, Young-Hwa Kim, Younghoon Son, Hyunyoon Cho, Byongwook Na, Hyo-Joo Ahn, Seungseob Lee, Seouk-Kyu Choi, Youn-Sik Park, Seok-Hun Hyun, Soobong Chang, Hyuck-Joon Kwon, Jung-Hwan Choi, Tae-Young Oh, Young-Soo Sohn, Kwang-Il Park, Seong-Jin Jang:
A 7.5Gb/s/pin LPDDR5 SDRAM With WCK Clocking and Non-Target ODT for High Speed and With DVFS, Internal Data Copy, and Deep-Sleep Mode for Low Power. ISSCC 2019: 378-380 - 2018
- [j10]Il-Min Yi, Min-Kyun Chae, Seok-Hun Hyun, Seung-Jun Bae, Jung-Hwan Choi, Seong-Jin Jang, Byungsub Kim, Jae-Yoon Sim, Hong-June Park:
A Time-Based Receiver With 2-Tap Decision Feedback Equalizer for Single-Ended Mobile DRAM Interface. IEEE J. Solid State Circuits 53(1): 144-154 (2018) - [j9]Chang-Kyo Lee, Junha Lee, Kiho Kim, Jin-Seok Heo, Jin-Hyeok Baek, Gil-Hoon Cha, Daesik Moon, Dong-Hun Lee, Jong-Wook Park, Seunseob Lee, Si-Hyeong Cho, Young-Ryeol Choi, Kyung-Soo Ha, Eunsung Seo, Youn-Sik Park, Seung-Jun Bae, Indal Song, Seok-Hun Hyun, Hyuck-Joon Kwon, Young-Soo Sohn, Jung-Hwan Choi, Kwang-Il Park, Seong-Jin Jang:
Dual-Loop Two-Step ZQ Calibration for Dynamic Voltage-Frequency Scaling in LPDDR4 SDRAM. IEEE J. Solid State Circuits 53(10): 2906-2916 (2018) - [c27]Joung-Wook Moon, Hye-Sung Yoo, Hundai Choi, Il-Won Park, Seok-Yong Kang, Jun-Bae Kim, Haeyoung Chung, Kiho Kim, Dong-Hun Lee, Ki-Jae Song, Seok-Hun Hyun, Indal Song, Young-Soo Sohn, Yong-Ho Cho, Jung-Hwan Choi, Kwang-Il Park, Seong-Jin Jang:
An Enhanced Built-off-Test Transceiver with Wide-range, Self-calibration Engine for 3.2 Gb/s/pin DDR4 SDRAM. A-SSCC 2018: 139-142 - [c26]Young-Ju Kim, Hye-Jung Kwon, Su-Yeon Doo, Yoon-Joo Eom, Young-Sik Kim, Min-Su Ahn, Yong-Hun Kim, Sang-Hoon Jung, Sung-Geun Do, Chang-Yong Lee, Jae-Sung Kim, Dong-Seok Kang, Kyung-Bae Park, Jung-Bum Shin, Jong-Ho Lee, Seung-Hoon Oh, Sang-Yong Lee, Ji-Hak Yu, Ji-Suk Kwon, Ki-Hun Yu, Chul-Hee Jeon, Sang-Sun Kim, Min-Woo Won, Gun-hee Cho, Hyun-Soo Park, Hyung-Kyu Kim, Jeong-Woo Lee, Seung-Hyun Cho, Keon-Woo Park, Jae-Koo Park, Yong Jae Lee, Yong-Jun Kim, Young-Hun Seo, Beob-Rae Cho, Chang-Ho Shin, ChanYong Lee, YoungSeok Lee, Yoon-Gue Song, Sam-Young Bang, Youn-Sik Park, Seouk-Kyu Choi, Byeong-Cheol Kim, Gong-Heum Han, Seung-Jun Bae, Hyuk-Jun Kwon, Jung-Hwan Choi, Young-Soo Sohn, Kwang-Il Park, Seong-Jin Jang:
A 16Gb 18Gb/S/pin GDDR6 DRAM with per-bit trainable single-ended DFE and PLL-less clocking. ISSCC 2018: 204-206 - [c25]Ki Chul Chun, Yonggyu Chu, Jin-Seok Heo, Tae-Sung Kim, Soohwan Kim, Hui-Kap Yang, Mi-Jo Kim, Chang-Kyo Lee, Ju-Hwan Kim, Hyunchul Yoon, Chang-Ho Shin, Sang-uhn Cha, Hyung-Jin Kim, Young-Sik Kim, Kyungryun Kim, Young-Ju Kim, Won-Jun Choi, Daesik Yim, Inkyu Moon, Young-Ju Kim, Junha Lee, Young Choi, Yongmin Kwon, Sung-Won Choi, Jung-Wook Kim, Yoon-Suk Park, Woongdae Kang, Jinil Chung, Seunghyun Kim, Yesin Ryu, Seong-Jin Cho, Hoon Shin, Hangyun Jung, Sanghyuk Kwon, Kyuchang Kang, Jongmyung Lee, Yujung Song, Youngjae Kim, Eun-Ah Kim, Kyung-Soo Ha, Kyoung-Ho Kim, Seok-Hun Hyun, Seung-Bum Ko, Jung-Hwan Choi, Young-Soo Sohn, Kwang-Il Park, Seong-Jin Jang:
A 16Gb LPDDR4X SDRAM with an NBTI-tolerant circuit solution, an SWD PMOS GIDL reduction technique, an adaptive gear-down scheme and a metastable-free DQS aligner in a 10nm class DRAM process. ISSCC 2018: 206-208 - [c24]Jin-Hyeok Baek, Chang-Kyo Lee, Kiho Kim, Daesik Moon, Gil-Hoon Cha, Jin-Seok Heo, Min-Su Ahn, Dong-Ju Kim, Jae-Joon Song, Seokhong Kwon, Jongmin Kim, Kyung-Soo Kim, Jinoh Ahn, Jeong-Sik Nam, Byung-Cheol Kim, Jeong-Hyeon Cho, Jeonghoon Oh, Seung-Jun Bae, Indal Song, Seok-Hun Hyun, Ilgweon Kim, Hyuck-Joon Kwon, Young-Soo Sohn, Jung-Hwan Choi, Kwang-Il Park, Seong-Jin Jang:
A sub-0.85V, 6.4GBP/S/Pin TX-Interleaved Transceiver with Fast Wake-Up Time Using 2-Step Charging Control and VOHCalibration in 20NM DRAM Process. VLSI Circuits 2018: 147-148 - 2017
- [j8]Kyomin Sohn, Won-Joo Yun, Reum Oh, Chi-Sung Oh, Seong-Young Seo, Min-Sang Park, Dong-Hak Shin, Won-Chang Jung, Sang-Hoon Shin, Je-Min Ryu, Hye-Seung Yu, Jae-Hun Jung, Hyunui Lee, Seok-Yong Kang, Young-Soo Sohn, Jung-Hwan Choi, Yong-Cheol Bae, Seong-Jin Jang, Gyo-Young Jin:
A 1.2 V 20 nm 307 GB/s HBM DRAM With At-Speed Wafer-Level IO Test Scheme and Adaptive Refresh Considering Temperature Distribution. IEEE J. Solid State Circuits 52(1): 250-260 (2017) - [c23]Chang-Kyo Lee, Junha Lee, Kiho Kim, Jin-Seok Heo, Gil-Hoon Cha, Jin-Hyeok Baek, Daesik Moon, Yoon-Joo Eom, Tae-Sung Kim, Hyunyoon Cho, Young Hoon Son, Seonghwan Kim, Jong-Wook Park, Sewon Eom, Si-Hyeong Cho, Young-Ryeol Choi, Seungseob Lee, Kyoung-Soo Ha, Youngseok Kim, Bo-Tak Lim, Dae-Hee Jung, Eungsung Seo, Kyoung-Ho Kim, Yoon-Gyu Song, Youn-Sik Park, Tae-Young Oh, Seung-Jun Bae, Indal Song, Seok-Hun Hyun, Joon-Young Park, Hyuck-Joon Kwon, Young-Soo Sohn, Jung-Hwan Choi, Kwang-Il Park, Seong-Jin Jang:
Dual-loop 2-step ZQ calibration for dedicated power supply voltage in LPDDR4 SDRAM. A-SSCC 2017: 153-156 - [c22]Sang-uhn Cha, Seongil O, Hyunsung Shin, Sangjoon Hwang, Kwang-Il Park, Seong-Jin Jang, Joo-Sun Choi, Gyo-Young Jin, Young Hoon Son, Hyunyoon Cho, Jung Ho Ahn, Nam Sung Kim:
Defect Analysis and Cost-Effective Resilience Architecture for Future DRAM Devices. HPCA 2017: 61-72 - [c21]Chang-Kyo Lee, Yoon-Joo Eom, Jin-Hee Park, Junha Lee, Hye-Ran Kim, Kihan Kim, Young Choi, Ho-Jun Chang, Jonghyuk Kim, Jong-Min Bang, Seungjun Shin, Hanna Park, Su-Jin Park, Young-Ryeol Choi, Hoon Lee, Kyong-Ho Jeon, Jae-Young Lee, Hyo-Joo Ahn, Kyoung-Ho Kim, Jung-Sik Kim, Soobong Chang, Hyong-Ryol Hwang, Duyeul Kim, Yoon-Hwan Yoon, Seok-Hun Hyun, Joon-Young Park, Yoon-Gyu Song, Youn-Sik Park, Hyuck-Joon Kwon, Seung-Jun Bae, Tae-Young Oh, Indal Song, Yong-Cheol Bae, Jung-Hwan Choi, Kwang-Il Park, Seong-Jin Jang, Gyo-Young Jin:
23.2 A 5Gb/s/pin 8Gb LPDDR4X SDRAM with power-isolated LVSTL and split-die architecture with 2-die ZQ calibration scheme. ISSCC 2017: 390-391 - [c20]Hye-Jung Kwon, Eunsung Seo, ChangYong Lee, Young-Hun Seo, Gong-Heum Han, Hye-Ran Kim, Jong-Ho Lee, Min-Su Jang, Sung-Geun Do, Seung-Hyun Cho, Jae-Koo Park, Su-Yeon Doo, Jung-Bum Shin, Sang-Hoon Jung, Hyoung-Ju Kim, In-Ho Im, Beob-Rae Cho, Jaewoong Lee, Jae-Youl Lee, Ki-Hun Yu, Hyung-Kyu Kim, Chul-Hee Jeon, Hyun-Soo Park, Sang-Sun Kim, Seok-Ho Lee, Jong-Wook Park, Seung-Sub Lee, Bo-Tak Lim, Jun-Young Park, Yoon-Sik Park, Hyuk-Jun Kwon, Seung-Jun Bae, Jung-Hwan Choi, Kwang-Il Park, Seong-Jin Jang, Gyo-Young Jin:
23.4 An extremely low-standby-power 3.733Gb/s/pin 2Gb LPDDR4 SDRAM for wearable devices. ISSCC 2017: 394-395 - [c19]Il-Min Yi, Min-Kyun Chae, Seok-Hun Hyun, Seung-Jun Bae, Jung-Hwan Choi, Seong-Jin Jang, Byungsub Kim, Jae-Yoon Sim, Hong-June Park:
23.7 A time-based receiver with 2-tap DFE for a 12Gb/s/pin single-ended transceiver of mobile DRAM interface in 0.8V 65nm CMOS. ISSCC 2017: 400-401 - 2016
- [j7]Il-Min Yi, Soo-Min Lee, Seung-Jun Bae, Young-Soo Sohn, Jung-Hwan Choi, Seong-Jin Jang, Byungsub Kim, Jae-Yoon Sim, Hong-June Park:
A 40 mV-Differential-Channel-Swing Transceiver Using a RX Current-Integrating TIA and a TX Pre-Emphasis Equalizer With a CML Driver at 9 Gb/s. IEEE Trans. Circuits Syst. I Regul. Pap. 63-I(1): 122-133 (2016) - [c18]Hyunui Lee, Sukyong Kang, Hye-Seung Yu, Won-Joo Yun, Jae-Hun Jung, Sungoh Ahn, Wang-Soo Kim, Beomyong Kil, Yoo-Chang Sung, Sang-Hoon Shin, Yong-Sik Park, Yong-Hwan Kim, Kyung-Woo Nam, Indal Song, Kyomin Sohn, Yong-Cheol Bae, Jung-Hwan Choi, Seong-Jin Jang, Gyo-Young Jin:
Design of non-contact 2Gb/s I/O test methods for high bandwidth memory (HBM). A-SSCC 2016: 169-172 - [c17]Hye-Yoon Joo, Seung-Jun Bae, Young-Soo Sohn, Young-Sik Kim, Kyung-Soo Ha, Min-Su Ahn, Young-Ju Kim, Yong-Jun Kim, Ju-Hwan Kim, Won-Jun Choi, Chang-Ho Shin, Soo Hwan Kim, Byeong-Cheol Kim, Seung-Bum Ko, Kwang-Il Park, Seong-Jin Jang, Gyo-Young Jin:
18.1 A 20nm 9Gb/s/pin 8Gb GDDR5 DRAM with an NBTI monitor, jitter reduction techniques and improved power distribution. ISSCC 2016: 314-315 - [c16]Kyomin Sohn, Won-Joo Yun, Reum Oh, Chi-Sung Oh, Seong-Young Seo, Min-Sang Park, Dong-Hak Shin, Won-Chang Jung, Sang-Hoon Shin, Je-Min Ryu, Hye-Seung Yu, Jae-Hun Jung, Kyung-Woo Nam, Seouk-Kyu Choi, Jaewook Lee, Uksong Kang, Young-Soo Sohn, Jung-Hwan Choi, Chi-Wook Kim, Seong-Jin Jang, Gyo-Young Jin:
18.2 A 1.2V 20nm 307GB/s HBM DRAM with at-speed wafer-level I/O test scheme and adaptive refresh considering temperature distribution. ISSCC 2016: 316-317 - [c15]Il-Min Yi, Seung-Jun Bae, Min-Kyun Chae, Soo-Min Lee, Young Jae Jang, Young-Chul Cho, Young-Soo Sohn, Jung-Hwan Choi, Seong-Jin Jang, Byungsub Kim, Jae-Yoon Sim, Hong-June Park:
A low-EMI four-bit four-wire single-ended DRAM interface by using a three-level balanced coding scheme. VLSI Circuits 2016: 1-2 - 2015
- [j6]Tae-Young Oh, Hoeju Chung, Jun-Young Park, Ki-Won Lee, Seung-Hoon Oh, Su-Yeon Doo, Hyoung-Joo Kim, ChangYong Lee, Hye-Ran Kim, Jong-Ho Lee, Jin-Il Lee, Kyung-Soo Ha, Young-Ryeol Choi, Young-Chul Cho, Yong-Cheol Bae, Taeseong Jang, Chulsung Park, Kwang-Il Park, Seong-Jin Jang, Joo-Sun Choi:
A 3.2 Gbps/pin 8 Gbit 1.0 V LPDDR4 SDRAM With Integrated ECC Engine for Sub-1 V DRAM Core Operation. IEEE J. Solid State Circuits 50(1): 178-190 (2015) - [c14]Yarui Peng, Bon Woong Ku, Youn-Sik Park, Kwang-Il Park, Seong-Jin Jang, Joo-Sun Choi, Sung Kyu Lim:
Design, packaging, and architectural policy co-optimization for DC power integrity in 3D DRAM. DAC 2015: 91:1-91:6 - [c13]Jongmi Lee, Youngwoo Ji, Seungnam Choi, Young-Chul Cho, Seong-Jin Jang, Joo-Sun Choi, Byungsub Kim, Hong-June Park, Jae-Yoon Sim:
5.7 A 29nW bandgap reference circuit. ISSCC 2015: 1-3 - [c12]Won-Joo Yun, Indal Song, Hanki Jeoung, Hundai Choi, Seok-Ho Lee, Jun-Bae Kim, Chi-Wook Kim, Jung-Hwan Choi, Seong-Jin Jang, Joo-Sun Choi:
17.7 A digital DLL with hybrid DCC using 2-step duty error extraction and 180° phase aligner for 2.67Gb/S/pin 16Gb 4-H stack DDR4 SDRAM with TSVs. ISSCC 2015: 1-3 - [c11]Chang-Kyo Lee, Min-Su Ahn, Daesik Moon, Kiho Kim, Yoon-Joo Eom, Won-Young Lee, Jongmin Kim, Sanghyuk Yoon, Baekkyu Choi, Seokhong Kwon, Joon-Young Park, Seung-Jun Bae, Yong-Cheol Bae, Jung-Hwan Choi, Seong-Jin Jang, Gyo-Young Jin:
A 6.4Gb/s/pin at sub-1V supply voltage TX-interleaving technique for mobile DRAM interface. VLSIC 2015: 182- - 2014
- [j5]Hwa-seon Kim, Seong-Jin Jang, Jong-Wook Jang:
Development of the knocking decision system using the CKP signal collection and analysis. Int. J. Secur. Networks 9(4): 209-215 (2014) - [c10]Reum Oh, Byunghyun Lee, Sang-Woong Shin, Wonil Bae, Hundai Choi, Indal Song, Yun-Sang Lee, Jung-Hwan Choi, Chi-Wook Kim, Seong-Jin Jang, Joo-Sun Choi:
Design technologies for a 1.2V 2.4Gb/s/pin high capacity DDR4 SDRAM with TSVs. VLSIC 2014: 1-2 - 2013
- [j4]Kyomin Sohn, Taesik Na, Indal Song, Yong Shim, Wonil Bae, Sanghee Kang, Dongsu Lee, Hangyun Jung, Seok-Hun Hyun, Hanki Jeoung, Ki Won Lee, Jun-Seok Park, Jongeun Lee, Byunghyun Lee, Inwoo Jun, Juseop Park, Junghwan Park, Hundai Choi, Sanghee Kim, Haeyoung Chung, Young Choi, Dae-Hee Jung, Byungchul Kim, Jung-Hwan Choi, Seong-Jin Jang, Chi-Wook Kim, Jung-Bae Lee, Joo-Sun Choi:
A 1.2 V 30 nm 3.2 Gb/s/pin 4 Gb DDR4 SDRAM With Dual-Error Detection and PVT-Tolerant Data-Fetch Scheme. IEEE J. Solid State Circuits 48(1): 168-177 (2013) - 2012
- [c9]Hwa-seon Kim, Seong-Jin Jang, Jong-Wook Jang:
A Study on Knocking Analysis Simulator Based on CRDI Engine ECU. FGIT-GDC/IESH/CGAG 2012: 255-262 - [c8]Kyomin Sohn, Taesik Na, Indal Song, Yong Shim, Wonil Bae, Sanghee Kang, Dongsu Lee, Hangyun Jung, Hanki Jeoung, Ki Won Lee, Junsuk Park, Jongeun Lee, Byunghyun Lee, Inwoo Jun, Juseop Park, Junghwan Park, Hundai Choi, Sanghee Kim, Haeyoung Chung, Young Choi, Dae-Hee Jung, Jang Seok Choi, Byung-Sick Moon, Jung-Hwan Choi, Byungchul Kim, Seong-Jin Jang, Joo-Sun Choi, Kyungseok Oh:
A 1.2V 30nm 3.2Gb/s/pin 4Gb DDR4 SDRAM with dual-error detection and PVT-tolerant data-fetch scheme. ISSCC 2012: 38-40 - 2011
- [j3]Jong-Pil Son, Jin Ho Kim, Woo Song Ahn, Seung Uk Han, Satoru Yamada, Byung-Sick Moon, Churoo Park, Hong-Sun Hwang, Seong-Jin Jang, Joo-Sun Choi, Young-Hyun Jun, Soo-Won Kim:
An Area-Efficient, Low-VDD, Highly Reliable Multi-Cell Antifuse System Fully Operative in DRAMs. IEICE Trans. Electron. 94-C(10): 1690-1697 (2011) - [c7]Seong-Jin Jang, Jong-Wook Jang:
A Study on Dynamic Gateway System for MOST GATEWAY Scheduling Algorithm. ACN 2011: 403-411 - [c6]Seong-Jin Jang, Jong-Wook Jang:
A study on scheduling algorithm for optimization of traffic distribution in MOST GATEWAY. APCC 2011: 703-708 - [c5]Seong-Jin Jang, Jong-Wook Jang:
A Study on Dynamic Gateway System for MOST GATEWAY Scheduling Algorithm in MOST25 and MOST150 Networks. ICHIT (1) 2011: 45-53 - 2010
- [c4]Jong-Pil Son, Jin Ho Kim, Woo Song Ahn, Seung Uk Han, Byung-Sick Moon, Churoo Park, Hong-Sun Hwang, Seong-Jin Jang, Joo-Sun Choi, Young-Hyun Jun, Soo-Won Kim:
A highly reliable multi-cell antifuse scheme using DRAM cell capacitors. ESSCIRC 2010: 482-485
2000 – 2009
- 2008
- [j2]Seung-Jun Bae, Kwang-Il Park, Jeong-Don Ihm, Ho-Young Song, Woo-Jin Lee, Hyun-Jin Kim, Kyoung-Ho Kim, Yoon-Sik Park, Min-Sang Park, Hong-Kyong Lee, Sam-Young Bang, Gil-Shin Moon, Seokwon Hwang, Young-Chul Cho, Sang-Jun Hwang, Dae-Hyun Kim, Ji-Hoon Lim, Jae-Sung Kim, Sunghoon Kim, Seong-Jin Jang, Joo-Sun Choi, Young-Hyun Jun, Kinam Kim, Soo-In Cho:
An 80 nm 4 Gb/s/pin 32 bit 512 Mb GDDR4 Graphics DRAM With Low Power and Low Noise Data Bus Inversion. IEEE J. Solid State Circuits 43(1): 121-131 (2008) - [c3]Seung-Jun Bae, Young-Soo Sohn, Kwang-Il Park, Kyoung-Ho Kim, Dae-Hyun Chung, Jingook Kim, Si-Hong Kim, Min-Sang Park, Jae-Hyung Lee, Sam-Young Bang, Ho-Kyung Lee, In-Soo Park, Jae-Sung Kim, Dae-Hyun Kim, Hye-Ran Kim, Yong-Jae Shin, Cheol-Goo Park, Gil-Shin Moon, Ki-Woong Yeom, Kang-Young Kim, Jae-Young Lee, Hyang-Ja Yang, Seong-Jin Jang, Joo-Sun Choi, Young-Hyun Jun, Kinam Kim:
A 60nm 6Gb/s/pin GDDR5 Graphics DRAM with Multifaceted Clocking and ISI/SSN-Reduction Techniques. ISSCC 2008: 278-279 - 2007
- [c2]Jeong-Don Ihm, Seung-Jun Bae, Kwang-Il Park, Ho-Young Song, Woo-Jin Lee, Hyun-Jin Kim, Kyoung-Ho Kim, Ho-Kyung Lee, Min-Sang Park, Sam-Young Bang, Mi-Jin Lee, Gil-Shin Moon, Young-Wook Jang, Suk-Won Hwang, Young-Chul Cho, Sang-Jun Hwang, Dae-Hyun Kim, Ji-Hoon Lim, Jae-Sung Kim, Su-Jin Park, Ok-Joo Park, Se-Mi Yang, Jin-Yong Choi, Young-Wook Kim, Hyun-Kyu Lee, Sunghoon Kim, Seong-Jin Jang, Young-Hyun Jun, Soo-In Cho:
An 80nm 4Gb/s/pin 32b 512Mb GDDR4 Graphics DRAM with Low-Power and Low-Noise Data-Bus Inversion. ISSCC 2007: 492-617 - 2005
- [j1]Sang-Bo Lee, Seong-Jin Jang, Jin-Seok Kwak, Sang-Jun Hwang, Young-Hyun Jun, Soo-In Cho, Chil-Gee Lee:
A 1.6-Gb/s/pin double data rate SDRAM with wave-pipelined CAS latency control. IEEE J. Solid State Circuits 40(1): 223-232 (2005)
1990 – 1999
- 1993
- [c1]Young-Hyun Jun, Weon-Hwa Jeong, Jong-Hoon Park, Tae-Hoon Kim, Seong-Wook Kim, Jae-Sik Lee, Seong-Jin Jang, Chang-Man Khang, Hee-Gook Lee:
A New Colum Redundancy Scheme For Fast Access Time of 64-Mb DRAM. ISCAS 1993: 1937-1940
Coauthor Index
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