Gate length dependence of bias temperature instability behavior in short channel SOI MOSFETs. - Wu, Wangran; Lu, J.; Liu, Chang; Wu, Heng; Tang, Xiaoyu; Sun, Jiabao; Zhang, Rui; Yu, Wenjie; Wang, Xi; Zhao, Yi (Microelectron. Reliab., 2016)

PBTI and HCI degradations of ultrathin body InGaAs-On-Insulator nMOSFETs fabricated by wafer bonding. - Tang, Xiaoyu; Lu, J.; Zhang, Rui; Zhao, Yi; Wu, Wangran; Liu, Chang; Shi, Yi; Huang, Ziqian; Kong, Yuechan (2015)