Gate length dependence of bias temperature instability behavior in short channel SOI MOSFETs - Wangran Wu; J. Lu; Chang Liu; Heng Wu; Xiaoyu Tang; Jiabao Sun; Rui Zhang; Wenjie Yu; Xi Wang; Yi Zhao (Microelectron. Reliab., 2016)

PBTI and HCI degradations of ultrathin body InGaAs-On-Insulator nMOSFETs fabricated by wafer bonding - Xiaoyu Tang; J. Lu; Rui Zhang; Yi Zhao; Wangran Wu; Chang Liu; Yi Shi; Ziqian Huang; Yuechan Kong (IEEE International Reliability Physics Symposium, IRPS 2015, Monterey, CA, USA, April 19-23, 2015, 2015)