BibTeX records: Simon Jeannot

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@inproceedings{DBLP:conf/essderc/HabhabMMMPJKMLVRNR23,
  author       = {Radouane Habhab and
                  Vincenzo Della Marca and
                  Pascal Masson and
                  Nadia Miridi and
                  Clement Pribat and
                  Simon Jeannot and
                  Thibault Kempf and
                  Marc Mantelli and
                  Philippe Lorenzini and
                  Jean{-}Marc Voisin and
                  Arnaud R{\'{e}}gnier and
                  Stephan Niel and
                  Francesco La Rosa},
  title        = {40nm {SONOS} Embedded Select in Trench Memory},
  booktitle    = {53rd {IEEE} European Solid-State Device Research Conference, {ESSDERC}
                  2023, Lisbon, Portugal, September 11-14, 2023},
  pages        = {21--24},
  publisher    = {{IEEE}},
  year         = {2023},
  url          = {https://doi.org/10.1109/ESSDERC59256.2023.10268472},
  doi          = {10.1109/ESSDERC59256.2023.10268472},
  timestamp    = {Sun, 06 Oct 2024 01:00:00 +0200},
  biburl       = {https://dblp.org/rec/conf/essderc/HabhabMMMPJKMLVRNR23.bib},
  bibsource    = {dblp computer science bibliography, https://dblp.org}
}

@article{DBLP:journals/mr/DobriJPJCPB17,
  author       = {Adam Dobri and
                  Simon Jeannot and
                  Fausto Piazza and
                  Carine Jahan and
                  Jean Coignus and
                  Luca Perniola and
                  Francis Balestra},
  title        = {Development and application of the Oxide Stress Separation technique
                  for the measurement of {ONO} leakage currents at low electric fields
                  in 40 nm floating gate embedded-flash memory},
  journal      = {Microelectron. Reliab.},
  volume       = {69},
  pages        = {47--51},
  year         = {2017},
  url          = {https://doi.org/10.1016/j.microrel.2016.12.006},
  doi          = {10.1016/J.MICROREL.2016.12.006},
  timestamp    = {Sun, 06 Oct 2024 01:00:00 +0200},
  biburl       = {https://dblp.org/rec/journals/mr/DobriJPJCPB17.bib},
  bibsource    = {dblp computer science bibliography, https://dblp.org}
}

@inproceedings{DBLP:conf/essderc/BarlasTGBBASJRM16,
  author       = {M. Barlas and
                  Boubacar Traore and
                  Laurent Grenouillet and
                  Stefania Bernasconi and
                  Philippe Blaise and
                  Mouhamad Alayan and
                  Benoit Skl{\'{e}}nard and
                  Eric Jalaguier and
                  Philippe Rodriguez and
                  F. Mazen and
                  E. Vilain and
                  M. Guillermet and
                  Simon Jeannot and
                  Elisa Vianello and
                  Luca Perniola},
  title        = {Impact of Si/Al implantation on the forming voltage and pre-forming
                  conduction modes in HfO2 based OxRAM cells},
  booktitle    = {46th European Solid-State Device Research Conference, {ESSDERC} 2016,
                  Lausanne, Switzerland, September 12-15, 2016},
  pages        = {168--171},
  publisher    = {{IEEE}},
  year         = {2016},
  url          = {https://doi.org/10.1109/ESSDERC.2016.7599613},
  doi          = {10.1109/ESSDERC.2016.7599613},
  timestamp    = {Fri, 16 Jun 2023 01:00:00 +0200},
  biburl       = {https://dblp.org/rec/conf/essderc/BarlasTGBBASJRM16.bib},
  bibsource    = {dblp computer science bibliography, https://dblp.org}
}

@inproceedings{DBLP:conf/essderc/AzzazBVGJCCBJDA15,
  author       = {M. Azzaz and
                  A. Benoist and
                  Elisa Vianello and
                  Daniele Garbin and
                  Eric Jalaguier and
                  Carlo Cagli and
                  C. Charpin and
                  Stefania Bernasconi and
                  Simon Jeannot and
                  T. Dewolf and
                  G. Audoit and
                  C. Guedj and
                  S. Denorme and
                  Philippe Candelier and
                  Claire Fenouillet{-}B{\'{e}}ranger and
                  Luca Perniola},
  title        = {Benefit of Al2O3/HfO2 bilayer for {BEOL} {RRAM} integration through
                  16kb memory cut characterization},
  booktitle    = {45th European Solid State Device Research Conference, {ESSDERC} 2015,
                  Graz, Austria, September 14-18, 2015},
  pages        = {266--269},
  publisher    = {{IEEE}},
  year         = {2015},
  url          = {https://doi.org/10.1109/ESSDERC.2015.7324765},
  doi          = {10.1109/ESSDERC.2015.7324765},
  timestamp    = {Tue, 11 May 2021 01:00:00 +0200},
  biburl       = {https://dblp.org/rec/conf/essderc/AzzazBVGJCCBJDA15.bib},
  bibsource    = {dblp computer science bibliography, https://dblp.org}
}