Hot-Carrier induced Breakdown events from Off to On mode in NEDMOS - Alain Bravaix; Edith Kussener; David Ney; Xavier Federspiel; Florian Cacho (2020 IEEE International Reliability Physics Symposium, IRPS 2020, Dallas, TX, USA, April 28 - May 30, 2020, 2020)

Guidelines for intermediate back end of line (BEOL) for 3D sequential integration - Claire Fenouillet-Béranger; S. Beaurepaire; Fabien Deprat; Alexandre Ayres De Sousa; Laurent Brunet; Perrine Batude; Olivier Rozeau; François Andrieu; Paul Besombes; M.-P. Samson; Bernard Previtali; F. Nemouchi; et al. (47th European Solid-State Device Research Conference, ESSDERC 2017, Leuven, Belgium, September 11-14, 2017, 2017)

Interconnect design study for electromigration reliability improvement - Giulio Marti; Lucile Arnaud; David Ney; Yves Wouters (IEEE International Reliability Physics Symposium, IRPS 2015, Monterey, CA, USA, April 19-23, 2015, 2015)

Power grid redundant path contribution in system on chip (SoC) robustness against electromigration - Boukary Ouattara; Lise Doyen; David Ney; Habib Mehrez; Pirouz Bazargan-Sabet (Microelectron. Reliab., 2014)