Low-temperature transport characteristics in SOI and sSOI nanowires down to 8nm width: Evidence of IDS and mobility oscillations. - Coquand, Remi; Barraud, Sylvain; Cassé, Mikaël; Koyama, Masahiro; Maffini-Alvaro, Virginie; Samson, Marie-Pierre; Tosti, Lucie; Mescot, Xavier; Ghibaudo, Gérard; Monfray, Stéphane; Boeuf, Frédéric; Faynot, Olivier; et al. (2013)

Influence of device scaling on low-frequency noise in SOI tri-gate N- and p-type Si nanowire MOSFETs. - Koyama, Masahiro; Cassé, Mikaël; Coquand, Remi; Barraud, Sylvain; Ghibaudo, Gérard; Iwai, Hiroshi; Reimbold, Gilles (2013)

Study of carrier transport in strained and unstrained SOI tri-gate and omega-gate Si-nanowire MOSFETs. - Koyama, Masahiro; Cassé, Mikaël; Coquand, Remi; Barraud, Sylvain; Iwai, Hiroshi; Ghibaudo, Gérard; Reimbold, Gilles (2012)

Scaling of Trigate nanowire (NW) MOSFETs Down to 5 nm Width: 300 K transition to Single Electron Transistor, challenges and opportunities. - Deshpande, Veeresh; Barraud, Sylvain; Jehl, Xavier; Wacquez, Romain; Vinet, Maud; Coquand, Remi; Roche, B.; Voisin, B.; Triozon, François; Vizioz, C.; Tosti, L.; Previtali, Bernard; et al. (2012)