Carbon-doped Ge2Sb2Te5 phase-change memory devices featuring reduced RESET current and power consumption - Quentin Hubert; Carine Jahan; Alain Toffoli; Gabriele Navarro; S. Chandrashekar; Pierre Noe; Veronique Sousa; Luca Perniola; J.-F. Nodin; A. Persico; S. Maitrejean; A. Roule; et al. (Proceedings of the 2012 European Solid-State Device Research Conference, ESSDERC 2012, Bordeaux, France, September 17-21, 2012, 2012)