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Steve Stoffels
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2010 – 2019
- 2019
- [j9]Yuki Yamashita, Steve Stoffels
, Niels Posthuma, Karen Geens
, Xiangdong Li, Jun Furuta, Stefaan Decoutere, Kazutoshi Kobayashi:
Monolithic integration of gate driver and p-GaN power HEMT for MHz-switching implemented by e-mode GaN-on-SOI process. IEICE Electron. Express 16(22): 20190516 (2019) - [c4]Steve Stoffels
, Niels Posthuma, Stefaan Decoutere, Benoit Bakeroot
, Andrea Natale Tallarico
, Enrico Sangiorgi, Claudio Fiegna, J. Zheng, X. Ma, Matteo Borga
, Elena Fabris
, Matteo Meneghini, Enrico Zanoni
, Gaudenzio Meneghesso, Juraj Priesol
, Alexander Satka
:
Perimeter Driven Transport in the p-GaN Gate as a Limiting Factor for Gate Reliability. IRPS 2019: 1-10 - 2018
- [j8]Matteo Borga
, Matteo Meneghini
, Steve Stoffels
, Marleen Van Hove, M. Zhao, X. Li, Stefaan Decoutere, Enrico Zanoni
, Gaudenzio Meneghesso:
Impact of the substrate and buffer design on the performance of GaN on Si power HEMTs. Microelectron. Reliab. 88-90: 584-588 (2018) - 2017
- [j7]Isabella Rossetto, Matteo Meneghini
, Eleonora Canato, Marco Barbato, Steve Stoffels
, Niels Posthuma, Stefaan Decoutere, Andrea Natale Tallarico
, Gaudenzio Meneghesso, Enrico Zanoni
:
Field- and current-driven degradation of GaN-based power HEMTs with p-GaN gate: Dependence on Mg-doping level. Microelectron. Reliab. 76-77: 298-303 (2017) - [j6]Ales Chvála
, Juraj Marek
, Patrik Pribytny, Alexander Satka
, Steve Stoffels
, Niels Posthuma, Stefaan Decoutere, Daniel Donoval
:
Analysis of multifinger power HEMTs supported by effective 3-D device electrothermal simulation. Microelectron. Reliab. 78: 148-155 (2017) - 2016
- [j5]Gaudenzio Meneghesso, Matteo Meneghini
, Davide Bisi
, Isabella Rossetto, Tian-Li Wu
, Marleen Van Hove, Denis Marcon, Steve Stoffels
, Stefaan Decoutere, Enrico Zanoni
:
Trapping and reliability issues in GaN-based MIS HEMTs with partially recessed gate. Microelectron. Reliab. 58: 151-157 (2016) - [j4]Isabella Rossetto, Matteo Meneghini
, Vanessa Rizzato, Maria Ruzzarin
, Andrea Favaron, Steve Stoffels
, Marleen Van Hove, Niels Posthuma, Tian-Li Wu
, Denis Marcon, Stefaan Decoutere, Gaudenzio Meneghesso, Enrico Zanoni
:
Study of the stability of e-mode GaN HEMTs with p-GaN gate based on combined DC and optical analysis. Microelectron. Reliab. 64: 547-551 (2016) - [c3]Vice Sodan, Federica Lidia Teresa Maggioni, Herman Oprins, Steve Stoffels
, Martine Baelmans
, Ingrid De Wolf:
New fast distributed thermal model for analysis of GaN based power devices. ESSDERC 2016: 172-175 - 2015
- [c2]Tian-Li Wu
, Denis Marcon, Brice De Jaeger, Marleen Van Hove, Benoit Bakeroot
, Steve Stoffels
, Guido Groeseneken
, Stefaan Decoutere, Robin Roelofs:
Time dependent dielectric breakdown (TDDB) evaluation of PE-ALD SiN gate dielectrics on AlGaN/GaN recessed gate D-mode MIS-HEMTs and E-mode MIS-FETs. IRPS 2015: 6 - 2014
- [j3]Jie Hu, Steve Stoffels
, Silvia Lenci, Nicolo Ronchi, Rafael Venegas, Shuzhen You, Benoit Bakeroot
, Guido Groeseneken
, Stefaan Decoutere:
Physical origin of current collapse in Au-free AlGaN/GaN Schottky Barrier Diodes. Microelectron. Reliab. 54(9-10): 2196-2199 (2014) - [j2]Tian-Li Wu
, Denis Marcon, Steve Stoffels
, Shuzhen You, Brice De Jaeger, Marleen Van Hove, Guido Groeseneken
, Stefaan Decoutere:
Stability evaluation of Au-free Ohmic contacts on AlGaN/GaN HEMTs under a constant current stress. Microelectron. Reliab. 54(9-10): 2232-2236 (2014) - [c1]Fabio Alessio Marino, Davide Bisi
, Matteo Meneghini
, Giovanni Verzellesi
, Enrico Zanoni
, Marleen Van Hove, Shuzhen You, Stefaan Decoutere, Denis Marcon, Steve Stoffels
, Nicolo Ronchi, Gaudenzio Meneghesso:
Breakdown investigation in GaN-based MIS-HEMT devices. ESSDERC 2014: 377-380 - 2012
- [j1]Denis Marcon, John Viaene, Paola Favia, Hugo Bender, Xuanwu Kang, Silvia Lenci, Steve Stoffels
, Stefaan Decoutere:
Reliability of AlGaN/GaN HEMTs: Permanent leakage current increase and output current drop. Microelectron. Reliab. 52(9-10): 2188-2193 (2012)
Coauthor Index
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