Effect of Substrate Contact Shape and Placement on RF Characteristics of 45 nm Low Power CMOS Devices. - Gogineni, Usha; Li, Hongmei; Alamo, Jesús A. del; Sweeney, Susan L.; Wang, Jing; Jagannathan, Basanth (IEEE J. Solid State Circuits, 2010)

Fully depleted extremely thin SOI for mainstream 20nm low-power technology and beyond. - Khaki-Firooz, Ali; Cheng, Kangguo; Jagannathan, Basanth; Kulkarni, Pranita; Sleight, Jeffrey W.; Shahrjerdi, Davood; Chang, Josephine B.; Lee, Sungjae; Li, Junjun; Bu, Huiming; Gauthier, Robert; Doris, Bruce; et al. (2010)

A 150 GHz Amplifier With 8 dB Gain and +6 dBm Psat in Digital 65 nm CMOS Using Dummy-Prefilled Microstrip Lines. - Seo, Munkyo; Jagannathan, Basanth; Pekarik, John J.; Rodwell, Mark J. W. (IEEE J. Solid State Circuits, 2009)

A 1.1V 150GHz amplifier with 8dB gain and +6dBm saturated output power in standard digital 65nm CMOS using dummy-prefilled microstrip lines. - Seo, Munkyo; Jagannathan, Basanth; Carta, Corrado; Pekarik, John J.; Chen, Luis; Yue, C. Patrick; Rodwell, Mark J. W. (2009)

Status and Direction of Communication Technologies - SiGe BiCMOS and RFCMOS. - Joseph, Alvin J.; Harame, David L.; Jagannathan, Basanth; Coolbaugh, Douglas D.; Ahlgren, David C.; Magerlein, John; Lanzerotti, Louis D.; Feilchenfeld, Natalie B.; Onge, Stephen A. St.; Dunn, James S.; Nowak, Edward J. (Proc. IEEE, 2005)

RFCMOS technology from 0.25μm to 65nm: the state of the art. - Pekarik, John J.; Greenberg, David R.; Jagannathan, Basanth; Groves, Robert A.; Jones, J. R.; Singh, Raminderpal; Chinthakindi, Anil; Wang, Xudong; Breitwisch, Matthew J.; Coolbaugh, Douglas D.; Cottrell, Peter E.; Florkey, John E.; et al. (2004)

Product applications and technology directions with SiGe BiCMOS. - Joseph, Alvin J.; Dunn, James S.; Freeman, Greg G.; Harame, David L.; Coolbaugh, Douglas; Groves, Robert A.; Stein, Kenneth J.; Volant, Rich; Subbanna, Seshadri; Marangos, V. S.; Onge, Stephen St.; Eshun, Ebenezer; et al. (IEEE J. Solid State Circuits, 2003)

40-Gb/s circuits built from a 120-GHz fT SiGe technology. - Freeman, Greg G.; Meghelli, Mounir; Kwark, Young; Zier, Steven; Rylyakov, Alexander V.; Sorna, Michael; Tanji, Todd; Schreiber, Oswin M.; Walter, Keith; Rieh, Jae-Sung; Jagannathan, Basanth; Joseph, Alvin J.; et al. (IEEE J. Solid State Circuits, 2002)