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2020 – today
- 2022
[j6]Thomas Bücher
, Janusz Grzyb, Philipp Hillger, Holger Rücker, Bernd Heinemann, Ullrich R. Pfeiffer:
A Broadband 300 GHz Power Amplifier in a 130 nm SiGe BiCMOS Technology for Communication Applications. IEEE J. Solid State Circuits 57(7): 2024-2034 (2022)- [c12]Florian Vogelsang, Christian Bredendiek, Jan Schopfel, Holger Rücker, Nils Pohl:
A Static Frequency Divider up to 163 GHz in SiGe-BiCMOS Technology. BCICTS 2022: 49-52 - 2021
- [c11]Sébastien Fregonese, Chhandak Mukherjee, Holger Rücker, Pascal Chevalier, Gerhard Fischer, Didier Céli, Marina Deng, Marine Couret, François Marc, Cristell Maneux, Thomas Zimmer:
Electro-Thermal Limitations and Device Degradation of SiGe HBTs with Emphasis on Circuit Performance. BCICTS 2021: 1-7 - [c10]Tobias Tannert, Markus Grözing, Manfred Berroth, Christian Schmidt, Jung Han Choi, Christoph Caspar, Jonathan Schostak, Volker Jungnickel, Ronald Freund, Holger Rücker:
Analog 2: 1 Multiplexer with over 110 GHz Bandwidth in SiGe BiCMOS Technology. BCICTS 2021: 1-4 - [c9]Thomas Bücher, Janusz Grzyb, Philipp Hillger, Holger Rücker, Bernd Heinemann, Ullrich R. Pfeiffer:
A 239-298 GHz Power Amplifier in an Advanced 130 nm SiGe BiCMOS Technology for Communications Applications. ESSCIRC 2021: 369-372 - 2020
- [c8]Florian Vogelsang, David Starke, Jonathan Wittemeier, Holger Rücker, Nils Pohl:
A Highly-Efficient 120 GHz and 240 GHz Signal Source in A SiGe-Technology. BCICTS 2020: 1-4
2010 – 2019
- 2019
- [c7]Holger Rücker, Bernd Heinemann:
Device Architectures for High-speed SiGe HBTs. BCICTS 2019: 1-7 - 2018
- [c6]Pascal Chevalier, Wolfgang Liebl, Holger Rücker, Alexis Gauthier, Dirk Manger, Bernd Heinemann, Grégory Avenier, Josef Böck:
SiGe BiCMOS Current Status and Future Trends in Europe. BCICTS 2018: 64-71 - 2017
- [j5]Pascal Chevalier, Michael Schröter, Colombo R. Bolognesi, Vincenzo d'Alessandro, Maria Alexandrova, Josef Böck, Ralf Flickiger, Sébastien Fregonese, Bernd Heinemann, Christoph Jungemann, Rickard Lovblom, Cristell Maneux, Olivier Ostinelli, Andreas Pawlak, Niccolò Rinaldi, Holger Rücker, Gerald Wedel, Thomas Zimmer:
Si/SiGe: C and InP/GaAsSb Heterojunction Bipolar Transistors for THz Applications. Proc. IEEE 105(6): 1035-1050 (2017) - 2014
- [j4]Ullrich R. Pfeiffer, Yan Zhao, Janusz Grzyb, Richard Al Hadi, Neelanjan Sarmah, Wolfgang Forster, Holger Rücker, Bernd Heinemann:
A 0.53 THz Reconfigurable Source Module With Up to 1 mW Radiated Power for Diffuse Illumination in Terahertz Imaging Applications. IEEE J. Solid State Circuits 49(12): 2938-2950 (2014) - [c5]Ullrich R. Pfeiffer, Yan Zhao, Janus Grzyb, Richard Al Hadi, Neelanjan Sarmah, Wolfgang Forster, Holger Rücker, Bernd Heinemann:
14.5 A 0.53THz reconfigurable source array with up to 1mW radiated power for terahertz imaging applications in 0.13μm SiGe BiCMOS. ISSCC 2014: 256-257 - 2012
- [c4]Andreas Mai, Holger Rücker:
Complementary RF-LDMOS transistors realized with standard CMOS implantations. ESSDERC 2012: 181-184 - [c3]Jeong-Min Lee, Woo-Young Choi, Holger Rücker:
60-GHz voltage-controlled oscillator and frequency divider in 0.25-µm SiGe BiCMOS technology. ISOCC 2012: 65-67 - [c2]Holger Rücker, Bernd Heinemann:
SiGe BiCMOS technology for mm-wave systems. ISOCC 2012: 266-268 - 2011
- [j3]Jin-Sung Youn, Myung-Jae Lee, Kang-Yeob Park, Holger Rücker, Woo-Young Choi:
A bandwidth adjustable integrated optical receiver with an on-chip silicon avalanche photodetector. IEICE Electron. Express 8(7): 404-409 (2011) - 2010
- [j2]Jin-Sung Youn, Myung-Jae Lee, Kang-Yeob Park, Holger Rücker, Woo-Young Choi:
7-Gb/s monolithic photoreceiver fabricated with 0.25-µm SiGe BiCMOS technology. IEICE Electron. Express 7(9): 659-665 (2010) - [j1]Holger Rücker, Bernd Heinemann, Wolfgang Winkler, Rainer Barth, Johannes Borngräber, Jürgen Drews, Gerhard G. Fischer, Alexander Fox, Thomas Grabolla, Ulrich Haak, Dieter Knoll, Falk Korndörfer, Andreas Mai, Steffen Marschmeyer, Peter Schley, Detlef Schmidt, J. Schmidt, Markus Andreas Schubert, K. Schulz, Bernd Tillack, Dirk Wolansky, Yuji Yamamoto:
A 0.13 µm SiGe BiCMOS Technology Featuring fT/fmax of 240/330 GHz and Gate Delays Below 3 ps. IEEE J. Solid State Circuits 45(9): 1678-1686 (2010)
2000 – 2009
- 2009
- [c1]Wolfgang Winkler, Wojciech Debski, Bernd Heinemann, Falk Korndörfer, Holger Rücker, Klaus Schmalz, Christoph Scheytt, Bernd Tillack:
122 GHz low-noise-amplifier in sige technology. ESSCIRC 2009: 316-319
Coauthor Index
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