Pierre-Jean Alet
Clean electricity x AI | Research & innovation | Executive MBA
Neuenburg, Schweiz
1446 Follower:innen
500+ Kontakte
Aktivitäten
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💡 En tant que scientifique, vous souhaitez renforcer vos compétences afin de mieux comprendre la #PolitiqueSuisse ? Alors prenez part au prochain…
💡 En tant que scientifique, vous souhaitez renforcer vos compétences afin de mieux comprendre la #PolitiqueSuisse ? Alors prenez part au prochain…
Beliebt bei Pierre-Jean Alet
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I am looking forward to sharing insights at my upcoming talk on how many of our clients are transitioning from Power Purchase Agreements (PPAs) to…
I am looking forward to sharing insights at my upcoming talk on how many of our clients are transitioning from Power Purchase Agreements (PPAs) to…
Beliebt bei Pierre-Jean Alet
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Führung mit Weitblick auf 2262m - EMBA UZH 2024-26 Startmodul Was für ein fantastischer Auftakt in den EMBA UZH! Nach einem inspirierenden ersten…
Führung mit Weitblick auf 2262m - EMBA UZH 2024-26 Startmodul Was für ein fantastischer Auftakt in den EMBA UZH! Nach einem inspirierenden ersten…
Beliebt bei Pierre-Jean Alet
Berufserfahrung
Ausbildung
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University of Zurich
Executive MBA Business Administration and Management, General
–Heute
The Executive MBA programmes of the University of Zurich offer senior leaders a general management training in 15 months. The Executive MBA in General Management with a focus on Digital Transformation consists of 6-day modules every 4 weeks in Zurich, learning expeditions in the USA and Finland, and an ambitious thesis project.
https://www.emba.uzh.ch/en/ -
École Polytechnique
PhD Physics
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Advisor: Dr. Pere Roca i Cabarrocas. Additional courses on business management and organization. Attended European summer schools on nanoscience and nanotechnology (Grenoble, France, 2006) and low temperature plasma physics (Bad Honnef, Germany, 2007).
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ENSTA Paris
Master Engineering
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Curriculum includes computer science, electronics, physics, mechanics, applied mathematics and economics; final year major: nuclear engineering.
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Lycée Fabert, Metz
CPGE Science
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“Classes préparatoires”, a two-year intensive course in physics, mathematics and computer science to enter top French engineering schools through competitive exams.
Bescheinigungen und Zertifikate
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Advanced Valuation and Strategy - M&A, Private Equity, and Venture Capital
Erasmus University Rotterdam
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Ehrenamt
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Leader of the Grid Integration working group
ETIP PV - The European Technology & Innovation Platform for Photovoltaics
–Heute 10 Jahre 8 Monate
Member of the steering committee of ETIP-PV (originally European PV Technology Platform) and its executive committee.
Leading activities related to grid integration of PV by a working group of experts from the Platform:
- Quantification, challenges and opportunities of PV integration
- Roadmapping on PV forecasting and observability
- Co-organisation of ETIP-PV's annual conference in May 2016: Repowering Europe, Photovoltaics centre-stage in the power system
Veröffentlichungen
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Forecasting and Observability: Critical Technologies for System Operations with High PV Penetration
Proceedings of the 32nd European Photovoltaic Solar Energy Conference and Exhibition
Forecasting and monitoring technologies for photovoltaics are required on different spatial and temporal scales by multiple actors, from the owners of PV systems to transmission system operators. In this paper the Grid integration working group of the European Technology and Innovation Platform – Photovoltaics (ETIP PV) reviews the different use cases for these technologies, their current status, and the need for future developments. Power system operations require a real-time view of PV…
Forecasting and monitoring technologies for photovoltaics are required on different spatial and temporal scales by multiple actors, from the owners of PV systems to transmission system operators. In this paper the Grid integration working group of the European Technology and Innovation Platform – Photovoltaics (ETIP PV) reviews the different use cases for these technologies, their current status, and the need for future developments. Power system operations require a real-time view of PV production for managing power reserves and for feeding shortterm forecasts. They also require forecasts on all timescales from the short (for dispatching purposes), where statistical models work best, to the very long (for infrastructure planning), where physics-based models are more accurate. Power system regulations are driving the development of these techniques. This application also provides a good basis for a cost/benefit analysis since the forecasting error can be linked to the prices charged for energy imbalance.
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Quantification, challenges and outlook of PV integration in the power system: a review by the European PV Technology Platform
Proceedings of the 31st European Photovoltaic Solar Energy Conference and Exhibition
Integration in the power system is becoming a limiting factor to the further development of photovoltaics. Proper quantification is needed to evaluate both issues and solutions; the share of annual electricity demand is widely used but we found that some of the metrics which are related to power rather than energy better reflect the impact on networks. Barriers to wider deployment of PV into power grids can be split between local technical issues (voltage levels, harmonics distortion, reverse…
Integration in the power system is becoming a limiting factor to the further development of photovoltaics. Proper quantification is needed to evaluate both issues and solutions; the share of annual electricity demand is widely used but we found that some of the metrics which are related to power rather than energy better reflect the impact on networks. Barriers to wider deployment of PV into power grids can be split between local technical issues (voltage levels, harmonics distortion, reverse power flows and transformer loading) and system-wide issues (intermittency, reduction of system resilience). Many of the technical solutions to these issues rely on the inverters as actuators (e.g., for control of active and reactive power) or as interfaces (e.g., for local storage). This role requires further technical standardisation and needs to be taken into account in the planning of power networks. Forecasting, storage, and combination with other renewable sources are interdependent solutions to solve the intermittency issue. Finally, we found that PV is also an opportunity to reduce some investment required to upgrade existing power networks. Through integration with micro-grids and hybrid generators, it can form the basis of novel power systems.
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A Strategic Research Agenda for Photovoltaic Solar Energy Technology
Publications Office of the European Union
The EU PV TP Strategic Research Agenda presents the view of a group of 29 PV experts (from industry and academia) of the research that should be started now in order to reach a defined set of cost targets by certain dates (2020 and 2030). Recommendations for research topics, often including a quantitative performance target relevant to that topic, are categorised according to the time by when it is likely that the results of the research or demonstration work are widely taken up by industry…
The EU PV TP Strategic Research Agenda presents the view of a group of 29 PV experts (from industry and academia) of the research that should be started now in order to reach a defined set of cost targets by certain dates (2020 and 2030). Recommendations for research topics, often including a quantitative performance target relevant to that topic, are categorised according to the time by when it is likely that the results of the research or demonstration work are widely taken up by industry.
The SRA is addressed to the managers and strategists behind public research programmes at EU, national and sub-national level, and to CTOs in industry.Andere Autor:innenVeröffentlichung anzeigen -
All-in-situ fabrication and characterization of silicon nanowires on TCO/glass substrates for photovoltaic application
Solar Energy Materials and Solar Cells
Silicon nanowires (SiNWs) provide new opportunities for developing a new generation of thin film Si solar cells with enhanced light trapping and increased overall performance. Here, we report on the fabrication of SiNW-based thin film solar cells directly on top of low cost TCO/glass substrates in an all-in-situ process. The SiNWs are obtained on ITO (or SnO2) substrates via vapor–liquid–solid growth mechanism, with the nano-scaled In (or Sn) catalyst droplets prepared by using H2 plasma…
Silicon nanowires (SiNWs) provide new opportunities for developing a new generation of thin film Si solar cells with enhanced light trapping and increased overall performance. Here, we report on the fabrication of SiNW-based thin film solar cells directly on top of low cost TCO/glass substrates in an all-in-situ process. The SiNWs are obtained on ITO (or SnO2) substrates via vapor–liquid–solid growth mechanism, with the nano-scaled In (or Sn) catalyst droplets prepared by using H2 plasma superficial reduction of ITO (or SnO2) in a plasma enhanced chemical vapor deposition system (PECVD). We demonstrate that the morphology and compositional properties of the SiNWs, as well as the catalyst remnant in the SiNWs, can be effectively controlled by tuning the growth temperature and plasma conditions. The enhanced light trapping and absorption effects have been achieved by growing SiNWs directly on top of the TCO substrates, with the absorption edge downshifting steadily to ∼1.1 eV, indicating that the crystalline core of the SiNWs also participates in the light absorption. According to a real time monitoring using an in-situ MM-16 ellipsometer, the enhanced light trapping/absorbing effects can be attributed to the growth of long, sharp and straight SiNW. Prototype SiNWs-based thin film solar cells are successfully demonstrated.
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Low-temperature growth of nano-structured silicon thin films on ITO initiated by metal catalysts
Thin Solid Films
Nano-structured silicon thin films have been grown on tin-doped indium oxide (ITO) by Plasma-Enhanced Chemical Vapor Deposition (PECVD) at temperatures lower than 200 °C. Nanometer-scaled aggregates of metal (copper or gold) obtained from evaporated layers were necessary to initiate the nano-structuring growth. Different deposition conditions have been investigated. The highest aspect ratio was obtained with copper and high-pressure plasmas with SiH4 diluted in H2. The metals help dissociating…
Nano-structured silicon thin films have been grown on tin-doped indium oxide (ITO) by Plasma-Enhanced Chemical Vapor Deposition (PECVD) at temperatures lower than 200 °C. Nanometer-scaled aggregates of metal (copper or gold) obtained from evaporated layers were necessary to initiate the nano-structuring growth. Different deposition conditions have been investigated. The highest aspect ratio was obtained with copper and high-pressure plasmas with SiH4 diluted in H2. The metals help dissociating silane so the deposition starts faster on the aggregates than around them, which leads to nano-structuration. It is likely that the metal remains confined at the interface between ITO and silicon and do not diffuse in the silicon layer.
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Plasma-enhanced low temperature growth of silicon nanowires and hierarchical structures by using tin and indium catalysts
Nanotechnology
Plasma-enhanced low temperature growth (<300 °C) of silicon nanowires (SiNWs) and hierarchical structures via a vapor–liquid–solid (VLS) mechanism are investigated. The SiNWs were grown using tin and indium as catalysts prepared by in situ H2 plasma reduction of SnO2 and ITO substrates, respectively. Effective growth of SiNWs at temperatures as low as 240 °C have been achieved, while tin is found to be more ideal than indium in achieving a better size and density control of the SiNWs…
Plasma-enhanced low temperature growth (<300 °C) of silicon nanowires (SiNWs) and hierarchical structures via a vapor–liquid–solid (VLS) mechanism are investigated. The SiNWs were grown using tin and indium as catalysts prepared by in situ H2 plasma reduction of SnO2 and ITO substrates, respectively. Effective growth of SiNWs at temperatures as low as 240 °C have been achieved, while tin is found to be more ideal than indium in achieving a better size and density control of the SiNWs. Ultra-thin (4–8 nm) silica nanowires, sprouting from the dendritic nucleation patterns on the catalyst's surface, were also observed to form during the cooling process. A kinetic growth model has been proposed to account for their formation mechanism. This hierarchical structure combines the advantages of the size and position controllability from the catalyst-on-top VLS–SiNWs and the ultra-thin size from the catalyst-on-bottom VLS–ScNWs.
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Gallium assisted plasma enhanced chemical vapor deposition of silicon nanowires
Nanotechnology
Silicon nanowires have been grown with gallium as catalyst by plasma enhanced chemical vapor deposition. The morphology and crystalline structure has been studied by electron microscopy and Raman spectroscopy as a function of growth temperature and catalyst thickness. We observe that the crystalline quality of the wires increases with the temperature at which they have been synthesized. The crystalline growth direction has been found to vary between \langle 111\rangle and \langle 112\rangle…
Silicon nanowires have been grown with gallium as catalyst by plasma enhanced chemical vapor deposition. The morphology and crystalline structure has been studied by electron microscopy and Raman spectroscopy as a function of growth temperature and catalyst thickness. We observe that the crystalline quality of the wires increases with the temperature at which they have been synthesized. The crystalline growth direction has been found to vary between \langle 111\rangle and \langle 112\rangle , depending on both the growth temperature and catalyst thickness. Gallium has been found at the end of the nanowires, as expected from the vapor–liquid–solid growth mechanism. These results represent good progress towards finding alternative catalysts to gold for the synthesis of nanowires.
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An In-Plane Solid-Liquid-Solid Growth Mode for Self-Avoiding Lateral Silicon Nanowires
Physical Review Letters
We report an in-plane solid-liquid-solid (IPSLS) mode for obtaining self-avoiding lateral silicon nanowires (SiNW) in a reacting-gas-free annealing process, where the growth of SiNWs is guided by liquid indium drops that transform the surrounding a-Si∶H matrix into crystalline SiNWs. The SiNWs can be ∼mm long, with the smallest diameter down to ∼22 nm. A high growth rate of >102 nm/s and rich evolution dynamics are revealed in a real-time in situ scanning electron microscopy observation. A…
We report an in-plane solid-liquid-solid (IPSLS) mode for obtaining self-avoiding lateral silicon nanowires (SiNW) in a reacting-gas-free annealing process, where the growth of SiNWs is guided by liquid indium drops that transform the surrounding a-Si∶H matrix into crystalline SiNWs. The SiNWs can be ∼mm long, with the smallest diameter down to ∼22 nm. A high growth rate of >102 nm/s and rich evolution dynamics are revealed in a real-time in situ scanning electron microscopy observation. A qualitative growth model is proposed to account for the major features of this IPSLS SiNW growth mode.
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Synthesis, morphology and compositional evolution of silicon nanowires directly grown on SnO2 substrates
Nanotechnology
We here propose an all-in situ method for growing vapor–liquid–solid (VLS) silicon nanowires (SiNWs) directly on SnO2 substrates in a plasma-enhanced chemical vapor deposition system. The tin catalysts are formed by a well-controlled H2 plasma treatment of the SnO2 layer. The lowest temperature for the tin-catalyzed VLS SiNWs growth in a silane plasma is ~250 °C. The effects of substrate temperature and H2 dilution of silane on the morphology and compositional evolution of the SiNWs were…
We here propose an all-in situ method for growing vapor–liquid–solid (VLS) silicon nanowires (SiNWs) directly on SnO2 substrates in a plasma-enhanced chemical vapor deposition system. The tin catalysts are formed by a well-controlled H2 plasma treatment of the SnO2 layer. The lowest temperature for the tin-catalyzed VLS SiNWs growth in a silane plasma is ~250 °C. The effects of substrate temperature and H2 dilution of silane on the morphology and compositional evolution of the SiNWs were systematically investigated. The catalyst content in the SiNWs can be effectively controlled by the deposition temperature. Moreover, enhanced absorption (down to ~1.1 eV) is achieved due to the strong light trapping and anti-reflection effects in the straight and long tapered SiNWs.
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In-situ generation of indium catalyst to grow crystalline silicon nanowires at low temperature on ITO
Journal of Materials Chemistry
In situ generation of indium catalyst droplets and subsequent growth of crystalline silicon nanowires on ITO by plasma-enhanced CVD are reported, and the wurtzite (Si–IV) phase is clearly evidenced in some wires.
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Transition from thin gold layers to nano-islands on TCO for catalyzing the growth of one-dimensional nanostructures
Physica Status Solidi (a)
The formation of gold islands on a transparent conductive oxide by annealing a thin evaporated layer is studied by SEM. The droplets of metal formed this way may catalyze the growth of nanowires or nanotubes to be used in opto-electronic devices. The effect of the initial thickness (between 1 nm and 4 nm) and the annealing temperature (between 70 °C and 650 °C) is investigated. A qualitative description of the evolution is given and quantitative data are obtained by automated image analysis…
The formation of gold islands on a transparent conductive oxide by annealing a thin evaporated layer is studied by SEM. The droplets of metal formed this way may catalyze the growth of nanowires or nanotubes to be used in opto-electronic devices. The effect of the initial thickness (between 1 nm and 4 nm) and the annealing temperature (between 70 °C and 650 °C) is investigated. A qualitative description of the evolution is given and quantitative data are obtained by automated image analysis. Number density, area and effective diameter of the aggregates depend heavily on the initial thickness but very slightly on the annealing temperature. Three phenomena are considered to explain the evolution: interfacial stress due to mismatch in the linear expansion coefficient, Ostwald ripening and kinetic aggregation. By comparing the experimental size distributions to the theoretical ones, the relevance of the last two is discussed. As an application, the gold catalyzed CVD growth of silicon nanowires on zinc oxide is demonstrated.
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Hybrid Solar Cells Based on Thin-Film Silicon and P3HT
European Physical Journal B - Applied Physics
Hybrid concepts based on a nanoscale combination of organic and inorganic semiconductors are a promising way to enhance the cost efficiency of solar cells through a better use of the solar spectrum, a higher aspect ratio of the interface, and the good processability of polymers. A new type of solar cells has been investigated. It is based on a heterojunction between regio-regular poly(3-hexylthiophene) as an organic electron donor and silicon as an inorganic electron acceptor. In a first step…
Hybrid concepts based on a nanoscale combination of organic and inorganic semiconductors are a promising way to enhance the cost efficiency of solar cells through a better use of the solar spectrum, a higher aspect ratio of the interface, and the good processability of polymers. A new type of solar cells has been investigated. It is based on a heterojunction between regio-regular poly(3-hexylthiophene) as an organic electron donor and silicon as an inorganic electron acceptor. In a first step towards nano-structured devices, cells made of flat thin films of these materials have been studied as a model case of the heterojunction. The materials were characterized through ellipsometry and absorption spectroscopy. The devices were studied by means of their spectral response and their I-V characteristics. By combining these results, the contribution of each layer and the mechanisms of photocurrent generation are explained. The best cells to-date show a power conversion efficiency of 1.6% under AM 1.5 illumination, with a V oc of 0.704 V and a J sc of 4.22 mA/cm2.
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Patente
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Procédé de production de nanostructures sur un substrat d'oxyde métallique, procédé de dépôt de couches minces sur un tel substrat, et un dispositif formé de couches minces
Ausgestellt am FR 2928939
A method for producing nanostructures (1) on a metal oxide substrate (2) includes the following steps: a) forming metal aggregates (3) on the metal oxide substrate (2); and b) vapor phase growing nanostructures (1) on the metal oxide substrate (2) covered with metal aggregates, the substrate being heated in the presence of one or more precursor gases, and the vapor phase growth of nanostructures (1) being catalyzed by the metal aggregates (3). The metal aggregate formation stage a) includes an…
A method for producing nanostructures (1) on a metal oxide substrate (2) includes the following steps: a) forming metal aggregates (3) on the metal oxide substrate (2); and b) vapor phase growing nanostructures (1) on the metal oxide substrate (2) covered with metal aggregates, the substrate being heated in the presence of one or more precursor gases, and the vapor phase growth of nanostructures (1) being catalyzed by the metal aggregates (3). The metal aggregate formation stage a) includes an operation for reducing the surface of the metal oxide substrate by reductive plasma treatment, causing droplets of metal aggregates (3) to form on the substrate (2), the metal aggregate formation stage a) and the nanostructure growth stage b) being carried out in series in a single shared plasma reactor chamber (4), the nanostructure growth being directly carried out on the droplets of metal aggregates (3).
Andere Erfinder:innen -
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Non-Tracked Low Concentration Solar Concentrator, Solar Concentrator Array and Waveguide Concentrator
Angemeldet am EU 2348342
A low concentration solar apparatus for collecting solar radiation and concentrating it to a receiving device (16) such as a photovoltaic cell or thermovoltaic cell, comprising a non-tracked waveguide concentrator (14) with integral light turning element (12). It is thus possible to provide a solar apparatus for generating power in a very cost effective manner compared to conventional solar apparatus such as photovoltaic modules.
Andere Erfinder:innenPatent anzeigen
Kurse
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Information design (Central Saint Martins)
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Innover grâce aux brevets (Innovating with patents)
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Sprachen
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English
Verhandlungssicher
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French
Muttersprache oder zweisprachig
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German
Gute Kenntnisse
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Japanese
Grundkenntnisse
Organisationen
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IEEE
Senior member
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IEEE Power & Energy Society
Member
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IEEE Electron Devices Society
Member
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IEEE
Member
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Weitere Aktivitäten von Pierre-Jean Alet
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❄️ Des résultats impressionnants pour Cool Roof sur les chambres froides !❄️ Grâce à notre revêtement Cool Roof appliqué sur un bâtiment de 4000m2…
❄️ Des résultats impressionnants pour Cool Roof sur les chambres froides !❄️ Grâce à notre revêtement Cool Roof appliqué sur un bâtiment de 4000m2…
Beliebt bei Pierre-Jean Alet
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Mott Lecture at ICANS 30 https://icans30.com/ I had the pleasure to attend the ICANS 30 conference in Manchester last August and the honour to open…
Mott Lecture at ICANS 30 https://icans30.com/ I had the pleasure to attend the ICANS 30 conference in Manchester last August and the honour to open…
Beliebt bei Pierre-Jean Alet
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#swisstech Curious about how a 🇨🇭 startup is cooling down data centers while slashing energy costs?📉 Learn how apheros' innovative metal foams…
#swisstech Curious about how a 🇨🇭 startup is cooling down data centers while slashing energy costs?📉 Learn how apheros' innovative metal foams…
Beliebt bei Pierre-Jean Alet
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🚀 I am extremely proud that my first-authored #article "An object-oriented implementation of a recursive “quantum network” solver and its…
🚀 I am extremely proud that my first-authored #article "An object-oriented implementation of a recursive “quantum network” solver and its…
Beliebt bei Pierre-Jean Alet
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Herzlich willkommen, liebe EMBA UZH Klasse 2024-26! Wir freuen uns riesig, euch auf dieser spannenden Reise zu begleiten! Nach einer inspirierenden…
Herzlich willkommen, liebe EMBA UZH Klasse 2024-26! Wir freuen uns riesig, euch auf dieser spannenden Reise zu begleiten! Nach einer inspirierenden…
Beliebt bei Pierre-Jean Alet
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⌛ Last chance! There is just one week to go to fill the questionnaire on (digital) #innovation in the power sector: https://lnkd.in/dsUVSM6T 😬…
⌛ Last chance! There is just one week to go to fill the questionnaire on (digital) #innovation in the power sector: https://lnkd.in/dsUVSM6T 😬…
Geteilt von Pierre-Jean Alet
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The 8th edition of the 𝐈𝐧𝐭𝐞𝐥𝐥𝐢𝐠𝐞𝐧𝐭 𝐌𝐚𝐢𝐧𝐭𝐞𝐧𝐚𝐧𝐜𝐞 𝐂𝐨𝐧𝐟𝐞𝐫𝐞𝐧𝐜𝐞 (https://lnkd.in/em42H8g2) took place over the past two…
The 8th edition of the 𝐈𝐧𝐭𝐞𝐥𝐥𝐢𝐠𝐞𝐧𝐭 𝐌𝐚𝐢𝐧𝐭𝐞𝐧𝐚𝐧𝐜𝐞 𝐂𝐨𝐧𝐟𝐞𝐫𝐞𝐧𝐜𝐞 (https://lnkd.in/em42H8g2) took place over the past two…
Beliebt bei Pierre-Jean Alet
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We are getting ready for the grand finale! On Tuesday, September 24th, we’ll wrap up the Energy Lab Unconference series in a festive atmosphere!…
We are getting ready for the grand finale! On Tuesday, September 24th, we’ll wrap up the Energy Lab Unconference series in a festive atmosphere!…
Beliebt bei Pierre-Jean Alet
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