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On the determination of the substrate effective doping concentration of irradiated HV-CMOS sensors using an edge-TCT technique based on the Two-Photon-Absorption process / García, M Fern (Cantabria Inst. of Phys.) ; Sánchez, J Gonz (Cantabria Inst. of Phys.) ; Jaramillo Echeverría, R (Cantabria Inst. of Phys.) ; Moll, M (CERN ; Gottingen U.) ; Montero, R (Basque U., Bilbao) ; Moya, D (Cantabria Inst. of Phys.) ; Pinto, R Palomo (Seville U.) ; Vila, I (Cantabria Inst. of Phys.)
We introduce a new method based on the transient-current technique (TCT) for the radiation tolerance assessment of an n-in-p junction with a deep n-well on a relatively low-resistivity p-type substrate commonly used for HV-CMOS pixel sensors. The transient-current method here employed uses a femtosecond laser to generate excess carriers via a two-photon-absorption (TPA) process. [...]
2017 - 12 p. - Published in : JINST 12 (2017) C01038
In : International Workshop on Semiconductor Pixel Detectors for Particles and Imaging (PIXEL2016), Sestri Levante, Italy, 5 - 9 Sep 2016, pp.C01038

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