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Irradiation effects on thin epitaxial silicon detectors
/ Khomenkov, V ; Bisello, D ; Bruzzi, M ; Candelori, A ; Litovchenko, A P ; Piemonte, C ; Rando, R ; Ravotti, F ; Zorzi, N
2006 - 5 p.
- Published in : Nucl. Instrum. Methods Phys. Res., A 568 (2006) 61-65
In : 10th European Symposium on Semiconductor Detectors (formerly 'Elmau Conference'), Wildbad Kreuth, Germany, 12 - 16 Jun 2005, pp.61-65
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3.
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4.
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Radiation-hard semiconductor detectors for SuperLHC
/ Bruzzi, Mara ; Adey, J ; Al-Ajili, A A ; Alexandrov, P ; Alfieri, G ; Allport, Philip P ; Andreazza, A ; Artuso, M ; Assouak, S ; Avset, B S et al.
An option of increasing the luminosity of the Large Hadron Collider (LHC) at CERN to 10/sup 35/ cm-/sup 2/s-/sup 1/ has been envisaged to extend the physics reach of the machine. An efficient tracking down to a few centimetres from the interaction point will be required to exploit the physics potential of the upgraded LHC. [...]
2005
- Published in : Nucl. Instrum. Methods Phys. Res., A 541 (2005) 189-201
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5.
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Radiation testing of GLAST LAT tracker ASICs
/ Rando, R ; Bangert, A ; Bisello, D ; Candelori, A ; Giubilato, P ; Hirayama, M ; Johnson, R ; Sadrozinski, H F W ; Sugizaki, M ; Wyss, J et al.
SLAC-REPRINT-2004-201.-
Stanford, CA : SLAC, 2004
- Published in : IEEE Trans. Nucl. Sci. 51 (2004) 1067-1073
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6.
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RD50 Status Report 2008 - Radiation hard semiconductor devices for very high luminosity colliders
/ Balbuena, Juan Pablo (Barcelona, Inst. Microelectron.) ; Bassignana, Daniela (Barcelona, Inst. Microelectron.) ; Campabadal, Francesca (Barcelona, Inst. Microelectron.) ; Díez, Sergio (Barcelona, Inst. Microelectron.) ; Fleta, Celeste (Barcelona, Inst. Microelectron.) ; Lozano, Manuel (Barcelona, Inst. Microelectron.) ; Pellegrini, Giulio (Barcelona, Inst. Microelectron.) ; Rafí, Joan Marc (Barcelona, Inst. Microelectron.) ; Ullán, Miguel (Barcelona, Inst. Microelectron.) ; Creanza, Donato (Bari U. ; INFN, Bari) et al.
The objective of the CERN RD50 Collaboration is the development of radiation hard semiconductor detectors for very high luminosity colliders, particularly to face the requirements of a possible upgrade scenario of the LHC.This document reports the status of research and main results obtained after the sixth year of activity of the collaboration..
CERN-LHCC-2010-012 ; LHCC-SR-003.
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2010. - 73 p.
Fulltext
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7.
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Radiation hardness and charge collection efficiency of lithium irradiated thin silicon diodes
/ Boscardin, Maurizio ; Betta, G F D ; Bruzzi, Mara ; Candelori, Andrea ; Focardi, Ettore ; Khomenkov, Volodymyr P ; Piemonte, Claudio ; Ronchin, S ; Tosi, C ; Zorzi, N
Due to their low depletion voltage, even after high particle fluences, improved tracking precision and momentum resolution, and reduced material budget, thin substrates are one of the possible choices to provide radiation hard detectors for future high energy physics experiments. In the framework of the CERN RD50 Collaboration, we have developed PIN diode detectors on membranes obtained by locally thinning the silicon substrate by means of TMAH etching from the wafer backside. [...]
2005
- Published in : IEEE Trans. Nucl. Sci. 52 (2005) 1048-1053
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8.
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Analysis of the radiation hardness and charge collection efficiency of thinned silicon diodes
/ Boscardin, M (ITC-IRST, Trento) ; Bruzzi, M (INFN, Florence ; Florence U.) ; Candelori, A (INFN, Padua) ; Dalla Betta, G -F (U. Trento (main)) ; Focardi, E (INFN, Florence ; Florence U.) ; Khomenkov, V (INFN, Padua) ; Piemonte, C (ITC-IRST, Trento) ; Ronchin, S (ITC-IRST, Trento) ; Tosi, C (U. Florence (main)) ; Zorzi, N (ITC-IRST, Trento)
Due to their low depletion voltage, even after high particle fluences, improved tracking precision and momentum resolution and reduced material budget, thin substrates are one of the possible choices to provide radiation hard detectors for future high energy physics experiments. In the framework of the CERN RD50 Collaboration, we have developed p-n diode detectors on membranes obtained by locally thinning the silicon substrate by means of TMAH etching from the wafer back-side. [...]
2004 - 4 p.
- Published in : 10.1109/NSSMIC.2004.1462353
In : 51st Nuclear Science Symposium and Medical Imaging Conference, Rome, Italy, 16 - 22 Oct 2004
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9.
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Silicon detectors for the sLHC
/ Affolder, A (Liverpool U.) ; Aleev, A (Moscow, ITEP) ; Allport, P P (Liverpool U.) ; Andricek, L (Munich, Max Planck Inst.) ; Artuso, M (Syracuse U.) ; Balbuena, J P (Barcelona, Inst. Microelectron.) ; Barabash, L (Kiev, INR) ; Barber, T (Freiburg U.) ; Barcz, A (Inst. Electron Tech., Warsaw ; Warsaw, Inst. Phys. Chem.) ; Bassignana, D (Barcelona, Inst. Microelectron.) et al.
In current particle physics experiments, silicon strip detectors are widely used as part of the inner tracking layers. A foreseeable large-scale application for such detectors consists of the luminosity upgrade of the Large Hadron Collider (LHC), the super-LHC or sLHC, where silicon detectors with extreme radiation hardness are required. [...]
2011
- Published in : Nucl. Instrum. Methods Phys. Res., A 658 (2011) 11-16
In : 8th International Conference on Radiation Effects on Semiconductor Materials Detectors and Devices, Florence, Italy, 12 - 15 Oct 2010, pp.11-16
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10.
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Lithium ion irradiation of standard and oxygenated silicon diodes
/ Candelori, A ; Betta, G F D ; Bisello, D ; Giubilato, P ; Kaminski, A ; Litovchenko, A P ; Lozano, A ; Petrie, J R ; Rando, R ; Ullán, M et al.
The next generation silicon detectors for future very high luminosity colliders or a possible LHC upgrade scenario will require radiation- hard detectors for fluences up to 10/sup 16/ 1-MeV equivalent neutrons/cm/sup 2/. These high fluences present strong constraints because long irradiation times are required at the currently available proton irradiation facilities. [...]
2004
- Published in : IEEE Trans. Nucl. Sci. 51 (2004) 2865-2871
In : 7th European Conference On Radiation And Its Effects On Components And Systems, Noordwijk, The Netherlands, 15 - 20 Sep 2003, pp.393-399
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