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CERN Document Server 2,045 notices trouvées  1 - 10suivantfin  aller vers la notice: La recherche a duré 0.14 secondes. 
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High resolution 3D characterization of silicon detectors using a Two Photon Absorption Transient Current Technique / García, Marcos Fernández (CERN ; Cantabria Inst. of Phys.) ; Echeverría, Richard Jaramillo (Cantabria Inst. of Phys.) ; Moll, Michael (CERN) ; Santos, Raúl Montero (U. Basque Country, Leioa) ; Palomo Pinto, Rogelio (Seville U.) ; Vila, Iván (Cantabria Inst. of Phys.) ; Wiehe, Moritz (CERN)
The Two Photon Absorption Transient Current Technique (TPA-TCT) is a tool to characterize semiconductor detectors using a spatially confined laser probe. Excess charge carriers are produced by the simultaneous absorption of two sub-bandgap photons in the material. [...]
Elsevier, 2020 - 4 p. - Published in : Nucl. Instrum. Methods Phys. Res., A 958 (2020) 162865
In : 15th Vienna Conference on Instrumentation, Vienna, Austria, 18 - 22 Feb 2019, pp.162865
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First observation of the charge carrier density related gain reduction mechanism in LGADs with the Two Photon Absorption-Transient Current Technique / Pape, S (CERN ; Tech. U., Dortmund (main)) ; Currás, E (CERN) ; Fernández García, M (Cantabria Inst. of Phys.) ; Moll, M (CERN) ; Montero, R (Basque U., Bilbao) ; Palomo, F R (Seville U.) ; Vila, I (Cantabria Inst. of Phys.) ; Wiehe, M (CERN ; Freiburg U.) ; Quintana, C (Cantabria Inst. of Phys.)
The Low Gain Avalanche Detector (LGAD) technology is very promising for silicon timing detectors and currently heavily researched. Recent studies show that the gain of LGADs highly depends on the charge carrier density inside the gain layer. [...]
2022 - 4 p. - Published in : Nucl. Instrum. Methods Phys. Res., A 1040 (2022) 167190 Fulltext: PDF;
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Plasma effects in silicon detectors and the Two Photon Absorption Transient Current Technique / Palomo, F R (Seville U.) ; Moll, M (CERN) ; Fernández-García, M (Cantabria Inst. of Phys.) ; Montero, R (U. Basque Country, Leioa) ; Vila, I (Cantabria Inst. of Phys.)
Two Photon Absorption-Transient Current Technique (TPA-TCT) is a new pulsed laser method for high resolution mapping of the electric field in solid state particle detectors. As it uses strongly focused ultrashort infrared laser pulses in the femtosecond regime, plasma effects need to be contended with. [...]
2021 - 6 p. - Published in : 10.1109/RADECS53308.2021.9954488
In : Conference on Radiation and its Effects on Components and Systems (RADECS 2021), Vienna, Austria, 13 - 17 Sep 2021, pp.1-6
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Characterisation of irradiated and non-irradiated silicon sensors with a table-top two photon absorption TCT system / Pape, S (CERN ; Dortmund U.) ; García, M Fernández (CERN ; Cantabria Inst. of Phys.) ; Moll, M (CERN) ; Montero, R (Basque U., Bilbao) ; Palomo, F R (Seville U.) ; Vila, I (Cantabria Inst. of Phys.) ; Wiehe, M (CERN ; Freiburg U.)
A tabletop Two Photon Absorption-Transient Current Technique (TPA-TCT) set-up built at CERN was used to investigate a non-irradiated PIN diode, an irradiated PIN diode, and a non-irradiated 5 × 5-multipad HPK LGAD. The intrinsic three dimensional spatial resolution of this method is demonstrated under normal incidence of the laser probe. [...]
2022 - 6 p. - Published in : JINST 17 (2022) C08011 Fulltext: PDF;
In : 12th International Conference on Positional Sensitive Detectors, Online, Online, 12 - 17 Sep 2021, pp.C08011
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Study of Neutron-, Proton-, and Gamma-Irradiated Silicon Detectors Using the Two-Photon Absorption–Transient Current Technique / Pape, Sebastian (CERN ; Tech. U., Dortmund (main)) ; García, Marcos Fernández (CERN ; Cantabria Inst. of Phys.) ; Moll, Michael (CERN) ; Wiehe, Moritz (CERN)
The Two-Photon Absorption–Transient Current Technique (TPA-TCT) is a device characterisation technique that enables three-dimensional spatial resolution. Laser light in the quadratic absorption regime is employed to generate excess charge carriers only in a small volume around the focal spot. [...]
2024 - 17 p. - Published in : Sensors 24 (2024) 5443 Fulltext: PDF;
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Development of a Tabletop Setup for the Transient Current Technique Using Two-Photon Absorption in Silicon Particle Detectors / Wiehe, Moritz (CERN ; Freiburg U.) ; Fernandez Garcia, Marcos (CERN) ; Moll, Michael (CERN) ; Montero, Raul (SGIker Laser Facility (UPV/EHU), Leioa) ; Palomo, F R (Escuela Técnica Superior de Ingenieros, Seville) ; Vila, Ivan (Cantabria Inst. of Phys.) ; Munoz-Marco, Hector (FYLA LASER, Valencia) ; Otgon, Viorel (FYLA LASER, Valencia) ; Perez-Millan, Pere (FYLA LASER, Valencia)
The transient current technique (TCT) is widely used in the field of silicon particle detector development. So far, only laser wavelengths with a photon energy larger than or similar to the silicon bandgap (single photon absorption) were used. [...]
2021 - 9 p. - Published in : IEEE Trans. Nucl. Sci. 68 (2021) 220-228 Fulltext: PDF;
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Fiber laser system of 1550 nm femtosecond pulses with configurable properties for the two-photon excitation of transient currents in semiconductor detectors / Almagro-Ruiz, Azahara (Guglielmo Marconi U.) ; Pape, Sebastian (CERN ; Dortmund U.) ; Muñoz-Marco, Héctor (Guglielmo Marconi U.) ; Wiehe, Moritz (CERN ; Freiburg U.) ; Currás, Esteban (CERN) ; Fernández-García, Marcos (CERN ; Cantabria Inst. of Phys.) ; Moll, Michael (CERN) ; Montero, Raúl (Basque U., Bilbao) ; Palomo, Francisco Rogelio (Seville U.) ; Quintana, Cristian (Cantabria Inst. of Phys.) et al.
A fiber laser system emitting ultrashort femtosecond pulses at 1550 nm with configurable properties has been developed as an excitation source for the two-photon absorption transient current technique (TPA-TCT). The modules of the system are designed to provide the optical specifications required at the output for localized characterization of semiconductor radiation detectors: variation of pulse energy between 10 nJ and 10p J, variation of the pulse repetition rate from 8.2 MHz to single shot, and variation of pulse duration between 300 and 600 fs. [...]
2022 - 12 p. - Published in : Appl. Opt. 61 (2022) 9386-9397
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On the determination of the substrate effective doping concentration of irradiated HV-CMOS sensors using an edge-TCT technique based on the Two-Photon-Absorption process / García, M Fern (Cantabria Inst. of Phys.) ; Sánchez, J Gonz (Cantabria Inst. of Phys.) ; Jaramillo Echeverría, R (Cantabria Inst. of Phys.) ; Moll, M (CERN ; Gottingen U.) ; Montero, R (Basque U., Bilbao) ; Moya, D (Cantabria Inst. of Phys.) ; Pinto, R Palomo (Seville U.) ; Vila, I (Cantabria Inst. of Phys.)
We introduce a new method based on the transient-current technique (TCT) for the radiation tolerance assessment of an n-in-p junction with a deep n-well on a relatively low-resistivity p-type substrate commonly used for HV-CMOS pixel sensors. The transient-current method here employed uses a femtosecond laser to generate excess carriers via a two-photon-absorption (TPA) process. [...]
2017 - 12 p. - Published in : JINST 12 (2017) C01038
In : International Workshop on Semiconductor Pixel Detectors for Particles and Imaging (PIXEL2016), Sestri Levante, Italy, 5 - 9 Sep 2016, pp.C01038
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Techniques for the Investigation of Segmented Sensors Using the Two Photon Absorption-Transient Current Technique / Pape, Sebastian (CERN ; Tech. U., Dortmund (main)) ; Curras, Esteban (CERN) ; Fernandez Garcia, Marcos (CERN ; CSIC, Madrid) ; Moll, Michael (CERN)
The Two Photon Absorption - Transient Current Technique (TPA-TCT) was used to investigate a silicon strip detector with illumination from the top. Measurement and analysis techniques for the TPA-TCT of segmented devices are presented and discussed using a passive strip CMOS detector as an example. [...]
arXiv:2211.10339.- 2023-01-14 - 11 p. - Published in : Sensors 23 (2023) 962 Fulltext: 2211.10339 - PDF; Publication - PDF;
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Characterisation of Silicon Detectors Using the Two Photon Absorption – Transient Current Technique / Pape, Sebastian
Modern high energy physics experiments have increasing demands on particle detectors in terms of their spatial and temporal resolution, as well as their ability to withstand higher radiation levels [...]
CERN-THESIS-2023-336 - 128.

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