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CERN Document Server 155 elementer funnet  1 - 10nesteslutt  gå til element: Søket tok 0.65 sekunder. 
1.
The CELESTA CubeSat In-Flight Radiation Measurements and Their Comparison With Ground Facilities Predictions / Coronetti, Andrea (CERN) ; Zimmaro, Alessandro (CERN) ; Alía, Rubén García (CERN) ; Danzeca, Salvatore (CERN) ; Masi, Alessandro (CERN) ; Slipukhin, Ivan (CERN) ; Amodio, Alessio (CERN) ; Dijks, Jasper (CERN) ; Peronnard, Paul (CERN) ; Secondo, Raffaello (CERN) et al.
The CELESTA CubeSat has employed radiation monitors developed by the Conseil Européen pour la Recherche Nucléaire (CERN) Centre, used for measuring the radiation environment at accelerators, to measure the space radiation field in a medium-Earth orbit (MEO). The technology is based on three static random-access memories (SRAMs) that are sensitive to single-event upsets (SEUs) and single-event latchups (SELs). [...]
2024 - 8 p. - Published in : IEEE Trans. Nucl. Sci.
Fulltext: PDF;
In : Conference on Radiation and its Effects on Components and Systems (RADECS 2023), Toulouse, France, 25 - 29 Sep 2023, pp.1623-1630
Detaljert visning - Lignende elementer
2.
Radiation-Induced Charge Trapping in Shallow Trench Isolations of FinFETs / Bonaldo, Stefano (Padua U. ; INFN, Padua) ; Wallace, Trace (Arizona State U., Tempe) ; Barnaby, Hugh (Arizona State U., Tempe) ; Borghello, Giulio (CERN) ; Termo, Gennaro (CERN ; Ecole Polytechnique, Lausanne) ; Faccio, Federico (CERN) ; Fleetwood, Daniel M (Vanderbilt U.) ; Mattiazzo, Serena (Padua U. ; INFN, Padua) ; Bagatin, Marta (Padua U. ; INFN, Padua) ; Paccagnella, Alessandro (Padua U. ; INFN, Padua) et al.
We provide comprehensive experimental data and technology computer-aided design (TCAD) simulations to clarify total-ionizing-dose mechanisms in 16-nm Si FinFETs. In n-channel FinFETs irradiated to ultrahigh doses, the transconductance evolution rebounds (increase up to 3–10 Mrad followed by a decrease), while the drain-to-source leakage current steadily augments until reaching a plateau at very large doses. [...]
2024 - 10 p. - Published in : IEEE Trans. Nucl. Sci. 71 (2024) 427-436 Fulltext: PDF;
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3.
Advanced Loss Map Analysis for Performance Assessment of the LHC Collimation System / Ziliotto, Filippo (Universita e INFN, Padova (IT)) ; D'Andrea, Marco (CERN) ; Redaelli, Stefano (CERN) ; Van Der Veken, Frederik (CERN)
Due to the rapid progress of the LHC performance, it is essential to monitor the damage potential of the circulating beams. [...]
CERN-ACC-NOTE-2023-0026. - 2023.
Full text
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4.
Luminosity calculation and threshold scan for the VeloPix ASICs / Girard, Lea
During my summer project I calculated the rates of the MonB counters from the VeloPix ASICs [...]
CERN--Note-2023-003. - 2023.
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5.
Luminosity calculation and threshold scan for the VeloPix ASICs / Girard, Lea
During my summer project I calculated the rates of the MonB counters from the VeloPix ASICs. [...]
CERN-STUDENTS-Note-2023-209. - 2023
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6.
High-Energy Proton and Atmospheric-Neutron Irradiations of SiC Power MOSFETs: SEB Study and Impact on Channel and Drift Resistances / Martinella, C (Zurich, ETH) ; Race, S (Zurich, ETH) ; Stark, R (Zurich, ETH) ; Alia, R G (CERN) ; Javanainen, A (Jyvaskyla U. ; Vanderbilt U.) ; Grossner, U (Zurich, ETH)
Accelerated single event burnout (SEB) tests with 200 MeV protons and atmospheric neutrons were performed for commercial silicon carbide (SiC) power MOSFETs with different architectures (i.e., planar gate, asymmetric trench, and symmetric trench). The average electric fields over the depletion layer width and the electric field distributions are reported for the tested conditions and compared for the three architectures, confirming the necessity of a lower de-rating for the trench design to protect from SEB, compared to planar ones. [...]
2023 - 8 p. - Published in : IEEE Trans. Nucl. Sci.
Fulltext: PDF;
In : European Conference on Radiation and its Effects on Components and Systems, Venice, Italy, 3 - 7 Oct 2022, pp.1844-1851
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7.
Characterisation of saturated waveforms of the Time-of-Flight detector for the T2K ND280 Upgrade / Van Campenhout, Emanuel Gerard Jan
A study of the saturated waveforms of the Time-of-Flight detector for the T2K ND280 upgrade is presented. [...]
CERN-STUDENTS-Note-2023-150. - 2023
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8.
Varistor Insulation for HTS Magnets / Kirby, G (CERN) ; Galvin, T ; Coll, D ; Stevenson, R ; Livesey, P
A variable resistance thin dielectric insulation coating for REBCO tape HTS coils has been developed. This new type of insulation system switches between high and low resistance, after an increase in inter-turn voltage. [...]
2022 - 4 p. - Published in : IEEE Trans. Appl. Supercond. 32 (2022) 7700604
In : 27th International Conference on Magnet Technology (MT-27), Fukuoka, Japan, 15 - 19 Nov 2021, pp.7700604
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9.
Optimising top-quark threshold scan at CLIC using genetic algorithm / Zarnecki, Aleksander (University of Warsaw (PL)) ; Nowak, K (University of Warsaw (PL))
One of the important goals at the future e+e− colliders is to measure the top-quark mass and width in a scan of the pair production threshold. However, the shape of the pair-production cross section at the threshold depends also on other model parameters, as the top Yukawa coupling, and the measurement is a subject to many systematic uncertainties. [...]
CLICdp-Pub-2021-002.- Geneva : CERN, 2021 - 22. Fulltext: PDF;
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10.
Charge Buildup and Spatial Distribution of Interface Traps in 65-nm pMOSFETs Irradiated to Ultrahigh Doses / Bonaldo, Stefano (U. Padua (main)) ; Gerardin, Simone (U. Padua (main)) ; Jin, Xiaoming (Northwest Inst. Nucl. Tech., Xian) ; Paccagnella, Alessandro (U. Padua (main)) ; Faccio, Federico (CERN) ; Borghello, Giulio (CERN) ; Fleetwood, Daniel M (Vanderbilt U. (main))
In this paper, a commercial 65-nm CMOS technology is irradiated at ultrahigh ionizing doses and then annealed at high temperature under different bias conditions. The experimental results demonstrate the high sensitivity of pMOSFETs to radiation-induced short-channel effects, related to the buildup of defects in spacer dielectrics. [...]
2019 - 10 p. - Published in : IEEE Trans. Nucl. Sci. 66 (2019) 1574-1583
In : Conference on Radiation and its Effects on Components and Systems, Gothenburg, Sweden, 16 - 21 Sep 2018, pp.1574-1583
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