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Radiation-Induced Charge Trapping in Shallow Trench Isolations of FinFETs
/ Bonaldo, Stefano (Padua U. ; INFN, Padua) ; Wallace, Trace (Arizona State U., Tempe) ; Barnaby, Hugh (Arizona State U., Tempe) ; Borghello, Giulio (CERN) ; Termo, Gennaro (CERN ; Ecole Polytechnique, Lausanne) ; Faccio, Federico (CERN) ; Fleetwood, Daniel M (Vanderbilt U.) ; Mattiazzo, Serena (Padua U. ; INFN, Padua) ; Bagatin, Marta (Padua U. ; INFN, Padua) ; Paccagnella, Alessandro (Padua U. ; INFN, Padua) et al.
We provide comprehensive experimental data and technology computer-aided design (TCAD) simulations to clarify total-ionizing-dose mechanisms in 16-nm Si FinFETs. In n-channel FinFETs irradiated to ultrahigh doses, the transconductance evolution rebounds (increase up to 3–10 Mrad followed by a decrease), while the drain-to-source leakage current steadily augments until reaching a plateau at very large doses. [...]
2024 - 10 p.
- Published in : IEEE Trans. Nucl. Sci. 71 (2024) 427-436
Fulltext: PDF;
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Isotopic Enriched and Natural SiC Junction Barrier Schottky Diodes Under Heavy Ion Irradiation
/ Røed, Ketil (Oslo U.) ; Eriksen, Dag Øistein (Oslo U.) ; Ceccaroli, Bruno (Unlisted, NO) ; Martinella, Corinna (Jyvaskyla U. ; CERN) ; Javanainen, Arto (Jyvaskyla U. ; Vanderbilt U.) ; Reshanov, Sergey (Unlisted, SE) ; Massetti, Silvia (ESTEC, Noordwijk)
The radiation tolerance of isotopic enriched and natural silicon carbide junction barrier Schottky diodes are compared under heavy ion irradiation. Both types of devices experience leakage current degradation as well as single-event burnout events. [...]
2022 - 8 p.
- Published in : IEEE Trans. Nucl. Sci. 69 (2022) 1675-1682
Fulltext from publisher: PDF;
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Current Transport Mechanism for Heavy-Ion Degraded SiC MOSFETs
/ Martinella, C (CERN ; Jyvaskyla U.) ; Stark, R (Zurich, ETH) ; Ziemann, T (Zurich, ETH) ; Alia, R G (CERN) ; Kadi, Y (CERN) ; Grossner, U (Zurich, ETH) ; Javanainen, A (Jyvaskyla U. ; Vanderbilt U. (main))
High sensitivity of silicon-carbide (SiC) power MOSFETs has been observed under heavy-ion irradiation, leading to permanent increase of drain and gate leakage currents. The electrical postirradiation analysis confirmed the degradation of the gate oxide and the blocking capability of the devices. [...]
2019 - 8 p.
- Published in : IEEE Trans. Nucl. Sci. 66 (2019) 1702-1709
In : Conference on Radiation and its Effects on Components and Systems, Gothenburg, Sweden, 16 - 21 Sep 2018, pp.1702-1709
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Measurements of Sensor Radiation Damage in the ATLAS Inner Detector using Leakage Currents
/ Grummer, Aidan (University of New Mexico)
/ATLAS Collaboration
Non-ionizing energy loss causes bulk damage to the silicon sensors of the ATLAS pixel and strip detectors.This damage has important implications for data-taking operations, charged-particle track reconstruction, detector simulations, and physics analysis. This talk presents simulations and measurements of the leakage current for the ATLAS pixel detector as a function of location in the detector and time, using data collected in Run 1 (2010-2012) and Run 2 (2015-2018) of the Large Hadron Collider. [...]
ATL-INDET-SLIDE-2021-034.-
Geneva : CERN, 2021
Fulltext: PDF; External link: Original Communication (restricted to ATLAS)
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Initial tests of large format sensors for the ATLAS ITk strip tracker
/ Klein, C T (Cambridge U. ; Carleton U.) ; Hommels, L B A (Cambridge U.) ; Fadeyev, V (UC, Santa Cruz, Inst. Part. Phys.) ; Gillberg, D (Carleton U.) ; Hara, K (Tsukuba U.) ; Keller, J S (Carleton U.) ; Koffas, T (Carleton U.) ; Kroll, J (Prague, Inst. Phys.) ; Lee, S J (Carleton U.) ; Mikestikova, M (Prague, Inst. Phys.) et al.
For the construction of the Inner Tracker (ITk) as part of the phase-II upgrade programme of the ATLAS detector for the High-Luminosity (HL) LHC, batches of Long Strip (LS) and Short Strip (SS) n$^+$ -in-p type micro-strip sensors have been produced by Hamamatsu Photonics and Infineon. The full size sensors measure approximately 98 × 98 mm$^2$ and are designed and engineered for tolerance against the $9.7 × 10^{14}$ 1 MeV n$_{eq}$/cm$^2$ fluence expected at the HL-LHC, including a safety factor of 1.5. [...]
2021 - 6 p.
- Published in : Nucl. Instrum. Methods Phys. Res., A 986 (2021) 164677
In : 12th international "Hiroshima" Symposium on the Development and Application of Semiconductor Tracking Detectors (HSTD), Hiroshima, Japan, 14 - 18 Dec 2019, pp.164677
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Experimental Determination of Proton Hardness Factors at Several Irradiation Facilities
/ Nikolopoulos, K (Birmingham U.) ; Allport, P (Birmingham U.) ; Bögelspacher, F (KIT, Karlsruhe, Dept. Phys.) ; Bruce, K (Birmingham U.) ; Canavan, R (Birmingham U.) ; Dierlamm, A (KIT, Karlsruhe, Dept. Phys.) ; Gonella, L (Birmingham U.) ; Knights, P (Birmingham U.) ; Kopsalis, I (Birmingham U.) ; Mateu, I (CERN) et al.
The effort to characterise detector sensors and components for the High Luminosity upgrade of the CERN Large Hadron Collider requires collaboration between irradiation facilities around the world. By convention, the radiation damage following irradiation with particle beams is reported as the 1 MeV neutron equivalent fluence, obtained using the corresponding hardness factor. [...]
IEEE, 2019 - 6 p.
- Published in : 10.1109/NSS/MIC42101.2019.9059629
In : 2019 IEEE Nuclear Science Symposium (NSS) and Medical Imaging Conference (MIC), Manchester, United Kingdom, 26 Oct - 2 Nov 2019, pp.1-6
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