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Timing performance of a monolithic CMOS pixel detector front-end in 180nm technology
/ Bespin, Christian (Bonn U.) ; Caicedo, Ivan (Bonn U.) ; Dingfelder, Jochen (Bonn U.) ; Hügging, Fabian (Bonn U.) ; Krüger, Hans (Bonn U.) ; Moustakas, Konstantinos (Bonn U. ; PSI, Villigen) ; Pernegger, Heinz (CERN) ; Schall, Lars (Bonn U.) ; Snoeys, Walter (CERN) ; Wermes, Norbert (Bonn U.)
The Monopix chips are a series of depleted monolithic active pixel sensors (DMAPS) for high-energy particle physics experiments with fast readout and high radiation tolerance. TJ-Monopix2 is the latest device fabricated in 180nm Tower Semiconductor imaging technology. [...]
2024 - 4 p.
- Published in : IEEE PACET 60398 (2024) 100
In : 7th PAnhellenic Conference on Electronics and Telecommunication (PACET 2024), Thessaloniki, Greece, 28 - 29 Mar 2024, pp.100
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2.
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Understanding Inductor-Originated Single-Event Frequency Transients in CMOS LC -Tank Oscillators: Causes, Effects, and System Impacts
/ Adom-Bamfi, Gideon (Leuven U.) ; Ma, Qichao (Leuven U.) ; Biereigel, Stefan (CERN) ; Leroux, Paul (Leuven U.) ; Prinzie, Jeffrey (Leuven U.)
Single-event frequency transients (SEFTs) in integrated complementary metal oxide semiconductor (CMOS) LC-tank voltage-controlled oscillator (VCO) and digitally-controlled oscillator (DCO), widely used in frequency synthesizer circuits, have recently been observed and linked to single-event effects (SEEs) in on-chip planar spiral inductors. This work provides an explanation of the underlying causes of these transients, presenting, for the first time, a general model to characterize their behavior and examine their system-level impact. [...]
2025 - 13 p.
- Published in : IEEE Trans. Nucl. Sci. 72 (2025) 1876-1888
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3.
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RPP Model Trends Across Technology Nodes for the MC Simulation of SEUs in Commercial Bulk Planar CMOS SRAMs Under Proton Irradiation
/ Şerban, Alexandra-Gabriela (CERN ; Bucharest U. ; Bucharest, IFIN-HH) ; Coronetti, Andrea (CERN ; IES, Montpellier ; Unlisted, DE) ; García Alía, Rubén (CERN) ; Salvat-Pujol, Francesc (CERN)
The ubiquitous use of electronic devices in high-radiation environments requires robust methods for assessing and improving their resilience against single-event effects (SEEs) and, especially, single-event upsets (SEUs). In this study, SEU production induced by protons below 500 MeV in three commercial bulk planar static random access memories (SRAMs) manufactured on different standard CMOS technology nodes (from 250 to 40 nm) is investigated employing the Monte Carlo (MC) particle-transport code FLUKA. [...]
2025 - 14 p.
- Published in : IEEE Trans. Nucl. Sci. 72 (2025) 133-146
Fulltext: PDF;
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Comparison of High Energy X-Ray and Cobalt-60 Irradiations on MOS Capacitors
/ Girones, Vincent (Montpellier U.) ; Boch, Jérôme (Montpellier U.) ; Saigné, Frédéric (Montpellier U.) ; Carapelle, Alain (CERN) ; Chapon, Arnaud ; Maraine, Tadec (Montpellier U.) ; Alía, Rubén García (CERN)
The use of a high energy X-ray generator for Total Ionizing Dose (TID) testing is studied on metal-oxide semiconductor (MOS) capacitors. Several conditions were studied for the high energy X-ray irradiations (with aluminum and lead filters) and the experimental results are compared to Cobalt 60 (Co-60) irradiations. [...]
2024 - 8 p.
- Published in : IEEE Trans. Nucl. Sci.
Fulltext: PDF;
In : Conference on Radiation and its Effects on Components and Systems (RADECS 2023), Toulouse, France, 25 - 29 Sep 2023, pp.1879-1886
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Radiation-Induced Charge Trapping in Shallow Trench Isolations of FinFETs
/ Bonaldo, Stefano (Padua U. ; INFN, Padua) ; Wallace, Trace (Arizona State U., Tempe) ; Barnaby, Hugh (Arizona State U., Tempe) ; Borghello, Giulio (CERN) ; Termo, Gennaro (CERN ; Ecole Polytechnique, Lausanne) ; Faccio, Federico (CERN) ; Fleetwood, Daniel M (Vanderbilt U.) ; Mattiazzo, Serena (Padua U. ; INFN, Padua) ; Bagatin, Marta (Padua U. ; INFN, Padua) ; Paccagnella, Alessandro (Padua U. ; INFN, Padua) et al.
We provide comprehensive experimental data and technology computer-aided design (TCAD) simulations to clarify total-ionizing-dose mechanisms in 16-nm Si FinFETs. In n-channel FinFETs irradiated to ultrahigh doses, the transconductance evolution rebounds (increase up to 3–10 Mrad followed by a decrease), while the drain-to-source leakage current steadily augments until reaching a plateau at very large doses. [...]
2024 - 10 p.
- Published in : IEEE Trans. Nucl. Sci. 71 (2024) 427-436
Fulltext: PDF;
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Radiation Environment in the Large Hadron Collider During the 2022 Restart and Related RHA Implications
/ Biłko, Kacper (CERN ; Lab. Hubert Curien, St. Etienne) ; García Alía, Rubén (CERN) ; Aguiar, Ygor (CERN) ; Danzeca, Salvatore (CERN) ; Di Francesca, Diego (CERN) ; Gilardoni, Simone (CERN) ; Girard, Sylvain (ICJ, Lyon ; IUF, Paris) ; Ricci, Daniel (CERN) ; Sebban, Marc (Lab. Hubert Curien, St. Etienne) ; Uznanski, Slawosz (CERN)
In this work, we present the radiation environment of the large hadron collider (LHC), focusing on the year 2022, the first after the Long Shutdown 2 (LS2) (2019–2021). We highlight the most prominent radiation-level changes with respect to the 2018 operation, commenting on the related Radiation Hardness Assurance implications. [...]
2024 - 11 p.
- Published in : IEEE Trans. Nucl. Sci. 71 (2024) 607-617
Fulltext: PDF;
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Advancements in TOF-PET using DOI Capable Modules and Low-Noise High-Frequency Readout
/ Terragni, G (CERN ; Vienna U.) ; Kratochwil, N (CERN) ; Lowis, C (CERN ; RWTH Aachen U.) ; Pagano, F (CERN ; INFN, Milan Bicocca) ; Cates, J W (LBNL, Berkeley) ; Pizzichemi, M (CERN ; INFN, Milan Bicocca) ; Marton, J (Vienna U.) ; Auffray Hillemanns, E (CERN)
Achieving good time resolution has become a prerequisite in positron emission tomography (PET) to improve the signal-to-noise ratio and thus the quality of the reconstructed image. A particularly attractive solution for the electronic readout is using low-noise high-frequency circuits (HF), which have demonstrated excellent timing performance in time-of-flight (TOF)-PET applications. [...]
2023 - 1 p.
- Published in : 10.1109/NSSMICRTSD49126.2023.10338675
In : 2023 IEEE Nuclear Science Symposium (NSS), Medical Imaging Conference (MIC) and Room Temperature Semiconductor Detector (RTSD) Conference (2023 IEEE NSS MIC RTSD), Vancouver, Canada, 4 - 11 Nov 2023
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