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Optimization of a 65 nm CMOS imaging process for monolithic CMOS sensors for high energy physics / Rinella, G Aglieri (CERN) ; Andronic, A (Munster U., ITP) ; Antonelli, M (INFN, Trieste ; Trieste U.) ; Baccomi, R (INFN, Trieste ; Trieste U.) ; Ballabriga, R (CERN) ; Barbero, M (Marseille, CPPM) ; Barrillon, P (Marseille, CPPM) ; Baudot, J (Strasbourg, IPHC) ; Becht, P (Heidelberg U.) ; Benotto, F (INFN, Turin ; Turin U.) et al.
The long term goal of the CERN Experimental Physics Department R&D; on monolithic sensorsis the development of sub-100nm CMOS sensors for high energy physics. The first technologyselected is the TPSCo 65nm CMOS imaging technology. [...]
2023 - 15 p. - Published in : PoS Pixel2022 (2023) 083 Fulltext: PDF;
In : 10th International Workshop on Semiconductor Pixel Detectors for Tracking and Imaging (PIXEL 2022), Santa Fe, USA, 11 - 16 Dec 2022, pp.083

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Development of a Stitched Monolithic Pixel Sensor prototype (MOSS chip) towards the ITS3 upgrade of the ALICE Inner Tracking system / Vicente Leitao, P (CERN) ; Aglieri Rinella, G (CERN) ; Bugiel, S (Strasbourg, IPHC) ; Cecconi, L (CERN) ; de Melo, J L A (CERN) ; De Robertis, G (INFN, Bari ; Bari U.) ; Deng, W (CERN ; Hua-Zhong Normal U.) ; Dorda Martin, A (CERN ; KIT, Karlsruhe) ; Dorosz, P (CERN) ; Fang, X (Strasbourg, IPHC) et al.
The MOnolithic Stitched Sensor (MOSS) is a development prototype chip towards the ITS3 vertexing detector for the ALICE experiment at the LHC. Designed using a 65 nm CMOS Imaging technology, it aims at profiting from the stitching technique to construct a single-die monolithic pixel detector of 1.4 cm × 26 cm. [...]
2023 - 8 p. - Published in : JINST 18 (2023) C01044
In : Topical Workshop on Electronics for Particle Physics 2022 (TWEPP 2022), Bergen, Norway, 19 - 23 Sep 2022, pp.C01044

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