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Radiation damage in p-type EPI silicon pad diodes irradiated with protons and neutrons / Gurimskaya, Yana (CERN) ; Dias De Almeida, Pedro (CERN ; Cantabria U., Santander) ; Fernandez Garcia, Marcos (Cantabria U., Santander) ; Mateu Suau, Isidre (CERN) ; Moll, Michael (CERN) ; Fretwurst, Eckhart (Hamburg U.) ; Makarenko, Leonid (Belarus State U.) ; Pintilie, Ioana (Bucharest, Nat. Inst. Mat. Sci.)
In view of the HL-LHC upgrade, radiation-tolerant silicon sensors containing low-resistivity p-type implants or substrates, like LGAD or HV-CMOS devices, are being developed in the framework of ATLAS, CMS, RD50 and other sensor R&D; projects. These devices are facing a particular problem — the apparent deactivation of the doping due to the irradiation, the so-called acceptor removal effect. [...]
Elsevier, 2020 - 4 p. - Published in : Nucl. Instrum. Methods Phys. Res., A 958 (2020) 162221
In : 15th Vienna Conference on Instrumentation, Vienna, Austria, 18 - 22 Feb 2019, pp.162221

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Irradiation Facilities at CERN / Gkotse, Blerina (CERN) ; Brugger, Markus (CERN) ; Carbonez, Pierre (CERN) ; Danzeca, Salvatore (CERN) ; Fabich, Adrian (CERN) ; Garcia Alia, Ruben (CERN) ; Glaser, Maurice (CERN) ; Gorine, Georgi (CERN, EPFL) ; Jaekel, Martin Richard (CERN) ; Mateu Suau, Isidre (CERN) et al.
CERN provides unique irradiation facilities for applications in many scientific fields. This paper summarizes the facilities currently operating for proton, gamma, mixed-field and electron irradiations, including their main usage, characteristics and information about their operation. [...]
AIDA-2020-CONF-2017-007.- Geneva : CERN, 2017 - Published in : Fulltext: PDF;
In : Conference on Radiation and its Effects on Components and Systems, CERN, Geneva, Switzerland, 2 - 6 Oct 2017

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