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CERN Document Server Sök i 32 journaler efter:  1 - 10nästaslut  gå till journal: Sökningen tog 0.54 sekunder. 
1.
Silicon strip defects and their impact on electrical performance of readout electronics / Affolder, A (UC, Santa Cruz) ; Fadeyev, V (UC, Santa Cruz) ; Galloway, Z (UC, Santa Cruz) ; Gignac, M (UC, Santa Cruz) ; Gunnell, J (UC, Santa Cruz) ; Johnson, J (UC, Santa Cruz) ; Kang, N (UC, Santa Cruz) ; Kaplon, J (CERN) ; Martinez-Mckinney, F (UC, Santa Cruz)
In preparation for the High Luminosity LHC (HL-LHC) runs, the ATLAS inner detector will be completely replaced with an all silicon Inner Tracker (ITk). Hybrid silicon pixel modules will be used for the innermost tracking layers, and silicon micro-strip detectors will be used the outer layers of the tracker. [...]
2021 - 11 p. - Published in : JINST 16 (2021) P03037 Fulltext: PDF;
2.
Strip sensor performance in prototype modules built for ATLAS ITk / ATLAS Collaboration
ATLAS experiment is preparing an upgrade of its detector for High-Luminosity LHC (HL-LHC) operation. The upgrade involves installation of the new all-silicon Inner Tracker (ITk). [...]
2020 - 6 p. - Published in : Nucl. Instrum. Methods Phys. Res., A 978 (2020) 164402
In : 12th international "Hiroshima" Symposium on the Development and Application of Semiconductor Tracking Detectors (HSTD), Hiroshima, Japan, 14 - 18 Dec 2019, pp.164402
3.
The ABC130 barrel module prototyping programme for the ATLAS strip tracker / ATLAS Collaboration
For the Phase-II Upgrade of the ATLAS Detector, its Inner Detector, consisting of silicon pixel, silicon strip and transition radiation sub-detectors, will be replaced with an all new 100 % silicon tracker, composed of a pixel tracker at inner radii and a strip tracker at outer radii. The future ATLAS strip tracker will include 11,000 silicon sensor modules in the central region (barrel) and 7,000 modules in the forward region (end-caps), which are foreseen to be constructed over a period of 3.5 years. [...]
arXiv:2009.03197.- 2020-09-03 - 82 p. - Published in : JINST 15 (2020) P09004 Fulltext: PDF;
4.
Radiation campaign of HPK prototype LGAD sensors for the High-Granularity Timing Detector (HGTD)Radiation Campaign of HPK Prototype LGAD sensors for the High-Granularity Timing Detector (HGTD) / Shi, X. (Beijing, Inst. High Energy Phys.) ; Ayoub, M.K. (Beijing, Inst. High Energy Phys.) ; da Costa, J. Barreiro Guimarães (Beijing, Inst. High Energy Phys.) ; Cui, H. (Beijing, Inst. High Energy Phys. ; Beijing, GUCAS) ; Kiuchi, R. (Beijing, Inst. High Energy Phys.) ; Fan, Y. (Beijing, Inst. High Energy Phys.) ; Han, S. (Beijing, Inst. High Energy Phys. ; Beijing, GUCAS) ; Huang, Y. (Beijing, Inst. High Energy Phys.) ; Jing, M. (Beijing, Inst. High Energy Phys. ; Beijing, GUCAS) ; Liang, Z. (Beijing, Inst. High Energy Phys.) et al.
We report on the results of a radiation campaign with neutrons and protons of Low Gain Avalanche Detectors (LGAD) produced by Hamamatsu (HPK) as prototypes for the High-Granularity Timing Detector (HGTD) in ATLAS. Sensors with an active thickness of 50~$\mu$m were irradiated in steps of roughly 2$\times$ up to a fluence of $3\times10^{15}~\mathrm{n_{eq}cm^{-2}}$. [...]
arXiv:2004.13895.- 2020-11-01 - 15 p. - Published in : Nucl. Instrum. Methods Phys. Res., A 979 (2020) 164382 Fulltext: PDF;
In : 12th international "Hiroshima" Symposium on the Development and Application of Semiconductor Tracking Detectors (HSTD), Hiroshima, Japan, 14 - 18 Dec 2019, pp.164382
5.
Study of CMOS strip sensor for future silicon tracker / Han, Y (Beijing, Inst. High Energy Phys. ; Beijing, GUCAS) ; Zhu, H (Beijing, Inst. High Energy Phys. ; Beijing U. of Tech.) ; Affolder, A (UC, Santa Cruz) ; Arndt, K (Oxford U.) ; Bates, R (Glasgow U.) ; Benoit, M (Geneva U.) ; Di Bello, F (Geneva U.) ; Blue, A (Glasgow U.) ; Bortoletto, D (Oxford U.) ; Buckland, M (U. Liverpool (main) ; CERN) et al.
Monolithic silicon sensors developed with High-Voltage CMOS (HV-CMOS) processes have become highly attractive for charged particle tracking. Compared with the standard CMOS sensors, HV-CMOS sensors can provide larger and deeper depletion regions that lead to larger signals and faster charge collection. [...]
2020 - 6 p. - Published in : Nucl. Instrum. Methods Phys. Res., A 981 (2020) 164520
In : 12th international "Hiroshima" Symposium on the Development and Application of Semiconductor Tracking Detectors (HSTD), Hiroshima, Japan, 14 - 18 Dec 2019, pp.164520
6.
Layout and Performance of HPK Prototype LGAD Sensors for the High-Granularity Timing Detector / Yang, X. (CUST, SKLPDE) ; Alderweireldt, S. (CERN) ; Atanov, N. (BITP, Kiev ; Dubna, JINR) ; Ayoub, M.K. (Beijing, Inst. High Energy Phys.) ; Barreiro Guimarães da Costa, J. (Beijing, Inst. High Energy Phys.) ; Castillo García, L. (Barcelona, IFAE) ; Chen, H. (CUST, SKLPDE) ; Christie, S. (UC, Santa Cruz, Inst. Part. Phys.) ; Cindro, V. (Stefan Inst., Ljubljana) ; Cui, H. (Beijing, Inst. High Energy Phys. ; Beijing, GUCAS) et al.
The High-Granularity Timing Detector is a detector proposed for the ATLAS Phase II upgrade. The detector, based on the Low-Gain Avalanche Detector (LGAD) technology will cover the pseudo-rapidity region of $2.4<|\eta|<4.0$ with two end caps on each side and a total area of 6.4 $m^2$. [...]
arXiv:2003.14071.- 2020-11-11 - 17 p. - Published in : Nucl. Instrum. Methods Phys. Res., A 980 (2020) 164379 Fulltext: PDF;
In : 12th international "Hiroshima" Symposium on the Development and Application of Semiconductor Tracking Detectors (HSTD), Hiroshima, Japan, 14 - 18 Dec 2019, pp.164379
7.
Experimental Study of Acceptor Removal in UFSD / Sadrozinski, H. F.-W. (SCIPP, UC Santa Cruz) ; Jin, Y. (SCIPP, UC Santa Cruz) ; Ren, H. (SCIPP, UC Santa Cruz) ; Christie, S. (SCIPP, UC Santa Cruz) ; Galloway, Z. (SCIPP, UC Santa Cruz) ; Gee, C. (SCIPP, UC Santa Cruz) ; Labitan, C. (SCIPP, UC Santa Cruz) ; Lockerby, M. (SCIPP, UC Santa Cruz) ; Martinez-McKinney, F. (SCIPP, UC Santa Cruz) ; Mazza, S. M. (SCIPP, UC Santa Cruz) et al.
The performance of the Ultra-Fast Silicon Detectors (UFSD) after irradiation with neutrons and protons is compromised by the removal of acceptors in the thin layer below the junction responsible for the gain. This effect is tested both with capacitance – voltage, C-V, measurements of the doping concentration and with measurements of charge collection, CC, using charged particles. [...]
AIDA-2020-PUB-2020-006.- Geneva : CERN, 2020 - Published in : Nucl. Instrum. Methods Phys. Res., A 983 (2020) 164611 Fulltext: PDF;
8.
Silicon Sensors for Future Particle Trackers / Cartiglia, N. (INFN Torino) ; Arcidiacono, R. (INFN Torino, Universita del Piemonte Orientale) ; Borghi, G. (FBK, TIFPA-INFN) ; Boscardin, M. (FBK, TIFPA-INFN) ; Costa, M. (INFN Torino, Universita di Torino) ; Galloway, Z. (SCIPP, University of California Santa Cruz) ; Fausti, F. (INFN Torino, Universita di Torino, DE.TEC.TOR.) ; Ferrero, M. (INFN Torino, Universita del Piemonte Orientale) ; Ficorella, F. (FBK, TIFPA-INFN) ; Mandurrino, M. (INFN Torino) et al.
Several future high-energy physics facilities are currently being planned. The proposed projects include high energy e+e− circular and linear colliders, hadron colliders and muon colliders, while the Electron-Ion Collider (EIC) has already been approved for construction at the Brookhaven National Laboratory. [...]
AIDA-2020-PUB-2020-005; arXiv:2003.13990.- Geneva : CERN, 2020 - Published in : Nucl. Instrum. Methods Phys. Res., A 979 (2020) 164383 Fulltext: PDF;
9.
Effect of deep gain layer and Carbon infusion on LGAD radiation hardness / Mazza, S.M. (University of California, Santa Cruz) ; Padilla, R. (University of California, Santa Cruz) ; Labitan, C. (University of California, Santa Cruz) ; Galloway, Z. (University of California, Santa Cruz) ; Gee, C. (University of California, Santa Cruz) ; McKinney-Martinez, F. (University of California, Santa Cruz) ; Sadrozinski, H. F.-W. (University of California, Santa Cruz) ; Seiden, A. (University of California, Santa Cruz) ; Schumm, B. (University of California, Santa Cruz) ; Wilder, M. (University of California, Santa Cruz) et al.
AIDA-2020-NOTE-2020-005.- Geneva : CERN, 2020 Fulltext: PDF;
10.
Charge collection in irradiated HV-CMOS detectors / Hiti, B (Stefan Inst., Ljubljana) ; Affolder, A (UC, Santa Cruz) ; Arndt, K (Oxford U.) ; Bates, R (Glasgow U.) ; Benoit, M (Geneva U.) ; Di Bello, F (Geneva U.) ; Blue, A (Glasgow U.) ; Bortoletto, D (Oxford U.) ; Buckland, M (U. Liverpool (main) ; CERN) ; Buttar, C (Glasgow U.) et al.
Active silicon detectors built on p-type substrate are a promising technological solution for large area silicon trackers such as those at the High Luminosity LHC, but the radiation hardness of this novel approach has to be evaluated. Active n-in-p strip detector prototypes CHESS2 for ATLAS with different substrate resistivities in the range of 20–1000 Ωcm were irradiated with neutrons and protons up to a fluence of 2×10$^{15} $n$_{eq}$ cm$^{-2}$ and 3.6×10$^{15} $n$_{eq}$ cm$^{-2}$ . [...]
Elsevier, 2019 - 5 p. - Published in : Nucl. Instrum. Methods Phys. Res., A 924 (2019) 214-218
In : 11th International "Hiroshima" Symposium on the Development and Application of Semiconductor Tracking Detectors (HSTD11) in conjunction with 2nd Workshop on SOI Pixel Detectors (SOIPIX2017) at OIST, Okinawa, Japan, Okinawa, Japan, 10 - 15 Dec 2017, pp.214-218

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