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Optimization of a 65 nm CMOS imaging process for monolithic CMOS sensors for high energy physics
/ Rinella, G Aglieri (CERN) ; Andronic, A (Munster U., ITP) ; Antonelli, M (INFN, Trieste ; Trieste U.) ; Baccomi, R (INFN, Trieste ; Trieste U.) ; Ballabriga, R (CERN) ; Barbero, M (Marseille, CPPM) ; Barrillon, P (Marseille, CPPM) ; Baudot, J (Strasbourg, IPHC) ; Becht, P (Heidelberg U.) ; Benotto, F (INFN, Turin ; Turin U.) et al.
The long term goal of the CERN Experimental Physics Department R&D; on monolithic sensorsis the development of sub-100nm CMOS sensors for high energy physics. The first technologyselected is the TPSCo 65nm CMOS imaging technology. [...]
2023 - 15 p.
- Published in : PoS Pixel2022 (2023) 083
Fulltext: PDF;
In : 10th International Workshop on Semiconductor Pixel Detectors for Tracking and Imaging (PIXEL 2022), Santa Fe, USA, 11 - 16 Dec 2022, pp.083
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Design and readout architecture of a monolithic binary active pixel sensor in TPSCo 65 nm CMOS imaging technology
/ Cecconi, L (CERN) ; Piro, F (CERN ; Ecole Polytechnique, Lausanne) ; de Melo, J L A (CERN) ; Deng, W (CERN ; Hua-Zhong Normal U.) ; Hong, G H (CERN ; Yonsei U.) ; Snoeys, W (CERN) ; Mager, M (CERN) ; Suljic, M (CERN) ; Kugathasan, T (CERN) ; Buckland, M (Trieste U. ; INFN, Trieste) et al.
The Digital Pixel Test Structure (DPTS) is a monolithic active pixel sensor prototype chip designed to explore the TPSCo 65 nm ISC process in the framework of the CERN-EP R&D; on monolithic sensors and the ALICE ITS3 upgrade. It features a 32 × 32 binary pixel matrix at 15 μm pitch with event-driven readout, with GHz range time-encoded digital signals including Time-Over-Threshold. [...]
2023 - 9 p.
- Published in : JINST 18 (2023) C02025
In : Topical Workshop on Electronics for Particle Physics 2022 (TWEPP 2022), Bergen, Norway, 19 - 23 Sep 2022, pp.C02025
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Design of an analog monolithic pixel sensor prototype in TPSCo 65 nm CMOS imaging technology
/ Deng, W (Hua-Zhong Normal U. ; CERN) ; Aglieri Rinella, G (CERN) ; Aresti, M (Catania U. ; INFN, Catania) ; Baudot, J (Strasbourg, IPHC) ; Benotto, F (INFN, Turin ; Turin U.) ; Beole, S (INFN, Turin ; Turin U.) ; Bialas, W (CERN) ; Borghello, G (CERN) ; Bugiel, S (Strasbourg, IPHC) ; Campbell, M (CERN) et al.
A series of monolithic active pixel sensor prototypes (APTS chips) were manufactured in the TPSCo 65 nm CMOS imaging process in the framework of the CERN-EP R&D; on monolithic sensors and the ALICE ITS3 upgrade project. Each APTS chip contains a 4 × 4 pixel matrix with fast analog outputs buffered to individual pads. [...]
2023 - 9 p.
- Published in : JINST 18 (2023) C01065
In : Topical Workshop on Electronics for Particle Physics 2022 (TWEPP 2022), Bergen, Norway, 19 - 23 Sep 2022, pp.C01065
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Development of a Stitched Monolithic Pixel Sensor prototype (MOSS chip) towards the ITS3 upgrade of the ALICE Inner Tracking system
/ Vicente Leitao, P (CERN) ; Aglieri Rinella, G (CERN) ; Bugiel, S (Strasbourg, IPHC) ; Cecconi, L (CERN) ; de Melo, J L A (CERN) ; De Robertis, G (INFN, Bari ; Bari U.) ; Deng, W (CERN ; Hua-Zhong Normal U.) ; Dorda Martin, A (CERN ; KIT, Karlsruhe) ; Dorosz, P (CERN) ; Fang, X (Strasbourg, IPHC) et al.
The MOnolithic Stitched Sensor (MOSS) is a development prototype chip towards the ITS3 vertexing detector for the ALICE experiment at the LHC. Designed using a 65 nm CMOS Imaging technology, it aims at profiting from the stitching technique to construct a single-die monolithic pixel detector of 1.4 cm × 26 cm. [...]
2023 - 8 p.
- Published in : JINST 18 (2023) C01044
In : Topical Workshop on Electronics for Particle Physics 2022 (TWEPP 2022), Bergen, Norway, 19 - 23 Sep 2022, pp.C01044
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Charge sensing properties of monolithic CMOS pixel sensors fabricated in a 65 nm technology
/ Bugiel, Szymon (Strasbourg, IPHC) ; Dorokhov, Andrei (Strasbourg, IPHC) ; Aresti, Mauro (INFN, Cagliari) ; Baudot, Jerome (Strasbourg, IPHC) ; Beole, Stefania (INFN, Turin) ; Besson, Auguste (Strasbourg, IPHC) ; Bugiel, Roma (Strasbourg, IPHC) ; Cecconi, Leonardo (CERN) ; Colledani, Claude (Strasbourg, IPHC) ; Deng, Wenjing (CERN ; CCNU, Wuhan, Inst. Part. Phys.) et al.
In this work the initial performance studies of the first small monolithic pixel sensors dedicated to charged particle detection, called CE-65, fabricated in the 65nm TowerJazz Panasonic Semiconductor Company are presented. The tested prototypes comprise matrices of 64 $\times$ 32 square analogue-output pixels with a pitch of 15 $\mu$m. [...]
2022 - 4 p.
In : Vienna Conference on Instrumentation (VCI 2022), Online, Austria, 21 - 25 Feb 2022, pp.167213
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The SALT—Readout ASIC for Silicon Strip Sensors of Upstream Tracker in the Upgraded LHCb Experiment
/ Beteta, Carlos Abellan (Zurich U.) ; Andreou, Dimitra (Syracuse U.) ; Artuso, Marina (Syracuse U.) ; Beiter, Andy (Syracuse U.) ; Blusk, Steven (Syracuse U.) ; Bugiel, Roma (AGH-UST, Cracow) ; Bugiel, Szymon (AGH-UST, Cracow) ; Carbone, Antonio (INFN, Milan) ; Carli, Ina (Beijing, Inst. High Energy Phys.) ; Chen, Bo (Beijing, Inst. High Energy Phys. ; Hunan U.) et al.
SALT, a new dedicated readout Application Specific Integrated Circuit (ASIC) for the Upstream Tracker, a new silicon detector in the Large Hadron Collider beauty (LHCb) experiment, has been designed and developed. It is a 128-channel chip using an innovative architecture comprising a low-power analogue front-end with fast pulse shaping and a 40 MSps 6-bit Analog-to-Digital Converter (ADC) in each channel, followed by a Digital Signal Processing (DSP) block performing pedestal and Mean Common Mode (MCM) subtraction and zero suppression. [...]
2021 - 21 p.
- Published in : Sensors 22 (2021) 107
Fulltext: PDF;
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High spatial resolution monolithic pixel detector in SOI technology
/ Bugiel, R (AGH-UST, Cracow) ; Bugiel, S (AGH-UST, Cracow) ; Dannheim, D (CERN) ; Fiergolski, A (CERN) ; Hynds, D (CERN) ; Idzik, M (AGH-UST, Cracow) ; Kapusta, P (Cracow, INP) ; Kucewicz, W (AGH-UST, Cracow) ; Munker, M (CERN) ; Nurnberg, A (CERN) et al.
This paper presents test-beam results of monolithic pixel detector prototypes fabricated in 200 nm Silicon-On-Insulator (SOI) CMOS technology studied in the context of high spatial resolution performance. The tested detectors were fabricated on a 500 μm thick high-resistivity Floating Zone type n (FZ-n) wafer and on a 300 μm Double SOI Czochralski type p (DSOI Cz-p) wafer. [...]
CLICdp-Pub-2020-004.-
Geneva : CERN, 2021 - 14.
- Published in : Nucl. Instrum. Methods Phys. Res., A 988 (2021) 164897
Fulltext: PDF; Fulltext from Publisher: PDF;
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