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Threshold bounce — occupancy-dependent modulation of the discriminating threshold in silicon detectors
/ Basso, M.J. (TRIUMF ; Simon Fraser U.) ; Buchanan, E. (CERN) ; Gallop, B.J. (Rutherford) ; John, J.J. (CERN ; Oxford U.) ; Kaplon, J. (CERN) ; Keener, P.T. (UPenn, Philadelphia) ; Phillips, P.W. (Rutherford) ; Poley, L. (TRIUMF ; Simon Fraser U.) ; Sawyer, C.A. (Rutherford) ; Sperlich, D. (Freiburg U.) et al.
The front-end electronics of silicon detectors are typically designed to ensure optimal noise performance for the expected input charge. A combination of preamplifiers and shaper circuits result in a nontrivial response of the front-end to injected charge, and the magnitude of the response may be sizeable in readout windows subsequent to that in which the charge was initially injected. [...]
arXiv:2406.10747.-
2024-06-28 - 22 p.
- Published in : JINST 19 (2024) P06041
Fulltext: 2406.10747 - PDF; Publication - PDF;
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Single event effect in ABC ASICs for ITk strip upgrade
/ Peng, Shaogang (Tsinghua U., Beijing ; Beijing, Inst. High Energy Phys.) ; Basso, Matthew (TRIUMF ; Simon Fraser U.) ; Chen, Xin (Tsinghua U., Beijing) ; Dandoy, Jeff (Carleton U.) ; Gallop, Bruce (Rutherford) ; John, Jaya John (U. Oxford (main)) ; Jing, Hantao (CAS, IHEP, Dongguan) ; Keener, Paul (UPenn, Philadelphia) ; Leitao, Pedro (CERN) ; Lu, Weiguo (Beijing, Inst. High Energy Phys. ; CUST, SKLPDE) et al.
This is the first study of the ABCStar V1 chips with an 80 MeV proton beam from CSNS. The ITk strip upgrade project utilizes the custom ABCStar ASIC, employing Triple Modular Redundancy technology to enhance its resistance to Single Event Effects caused by radiation. [...]
2024 - 5 p.
- Published in : Nucl. Instrum. Methods Phys. Res., A 1065 (2024) 169531
In : 13th International "Hiroshima" Symposium on the Development and Application of Semiconductor Tracking Detectors, Vancouver, Canada, 3 - 8 Dec 2023, pp.169531
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A Starry Byte — proton beam measurements of single event upsets and other radiation effects in ABCStar ASIC Versions 0 and 1 for the ITk strip tracker
/ Basso, M.J. (Toronto U.) ; Fernández-Tejero, J. (Simon Fraser U. ; TRIUMF) ; Gallop, B.J. (Rutherford) ; Greig, G. (Simon Fraser U.) ; John, J.J. (CERN) ; Keener, P.T. (Pennsylvania U.) ; Krizka, K. (LBL, Berkeley) ; Leitao, P.V. (CERN) ; Norman, B. (Carleton U.) ; Phillips, P.W. (Rutherford) et al.
Single Event Effects (SEEs) - predominately bit-flips in electronics caused by particle interactions - are a major concern for ASICs operated in high radiation environments such as ABCStar ASICs, which are designed to be used in the future ATLAS ITk strip tracker. The chip design is therefore optimised to protect it from SEEs by implementing triplication techniques such as Triple Modular Redundancy (TMR). [...]
arXiv:2203.12641.-
2022-03-21 - 34 p.
- Published in : JINST
Fulltext: document - PDF; 2203.12641 - PDF;
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The ABC130 barrel module prototyping programme for the ATLAS strip tracker
/ ATLAS Collaboration
For the Phase-II Upgrade of the ATLAS Detector, its Inner Detector, consisting of silicon pixel, silicon strip and transition radiation sub-detectors, will be replaced with an all new 100 % silicon tracker, composed of a pixel tracker at inner radii and a strip tracker at outer radii. The future ATLAS strip tracker will include 11,000 silicon sensor modules in the central region (barrel) and 7,000 modules in the forward region (end-caps), which are foreseen to be constructed over a period of 3.5 years. [...]
arXiv:2009.03197.-
2020-09-03 - 82 p.
- Published in : JINST 15 (2020) P09004
Fulltext: PDF;
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8.
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Study of CMOS strip sensor for future silicon tracker
/ Han, Y (Beijing, Inst. High Energy Phys. ; Beijing, GUCAS) ; Zhu, H (Beijing, Inst. High Energy Phys. ; Beijing U. of Tech.) ; Affolder, A (UC, Santa Cruz) ; Arndt, K (Oxford U.) ; Bates, R (Glasgow U.) ; Benoit, M (Geneva U.) ; Di Bello, F (Geneva U.) ; Blue, A (Glasgow U.) ; Bortoletto, D (Oxford U.) ; Buckland, M (U. Liverpool (main) ; CERN) et al.
Monolithic silicon sensors developed with High-Voltage CMOS (HV-CMOS) processes have become highly attractive for charged particle tracking. Compared with the standard CMOS sensors, HV-CMOS sensors can provide larger and deeper depletion regions that lead to larger signals and faster charge collection. [...]
2020 - 6 p.
- Published in : Nucl. Instrum. Methods Phys. Res., A 981 (2020) 164520
In : 12th international "Hiroshima" Symposium on the Development and Application of Semiconductor Tracking Detectors (HSTD), Hiroshima, Japan, 14 - 18 Dec 2019, pp.164520
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Charge collection in irradiated HV-CMOS detectors
/ Hiti, B (Stefan Inst., Ljubljana) ; Affolder, A (UC, Santa Cruz) ; Arndt, K (Oxford U.) ; Bates, R (Glasgow U.) ; Benoit, M (Geneva U.) ; Di Bello, F (Geneva U.) ; Blue, A (Glasgow U.) ; Bortoletto, D (Oxford U.) ; Buckland, M (U. Liverpool (main) ; CERN) ; Buttar, C (Glasgow U.) et al.
Active silicon detectors built on p-type substrate are a promising technological solution for large area silicon trackers such as those at the High Luminosity LHC, but the radiation hardness of this novel approach has to be evaluated. Active n-in-p strip detector prototypes CHESS2 for ATLAS with different substrate resistivities in the range of 20–1000 Ωcm were irradiated with neutrons and protons up to a fluence of 2×10$^{15} $n$_{eq}$ cm$^{-2}$ and 3.6×10$^{15} $n$_{eq}$ cm$^{-2}$ . [...]
Elsevier, 2019 - 5 p.
- Published in : Nucl. Instrum. Methods Phys. Res., A 924 (2019) 214-218
In : 11th International "Hiroshima" Symposium on the Development and Application of Semiconductor Tracking Detectors (HSTD11) in conjunction with 2nd Workshop on SOI Pixel Detectors (SOIPIX2017) at OIST, Okinawa, Japan, Okinawa, Japan, 10 - 15 Dec 2017, pp.214-218
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10.
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Charge collection studies in irradiated HV-CMOS particle detectors
/ Affolder, A (Liverpool U.) ; Andelković, M (Nis U.) ; Arndt, K (Oxford U.) ; Bates, R (Glasgow U.) ; Blue, A (Glasgow U.) ; Bortoletto, D (Oxford U.) ; Buttar, C (Glasgow U.) ; Caragiulo, P (SLAC) ; Cindro, V (Stefan Inst., Ljubljana) ; Das, D (Rutherford) et al.
Charge collection properties of particle detectors made in HV-CMOS technology were investigated before and after irradiation with reactor neutrons. Two different sensor types were designed and processed in 180 and 350 nm technology by AMS. [...]
IOP, 2016 - 18 p.
- Published in : JINST 11 (2016) P04007
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