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Low-Temperature Annealing of Electron, Neutron, and Proton Irradiation Effects on SiC Radiation Detectors / Rafí, Joan Marc (Barcelona, Inst. Microelectron.) ; Pellegrini, Giulio (Barcelona, Inst. Microelectron.) ; Godignon, Philippe (Barcelona, Inst. Microelectron.) ; Rius, Gemma (Barcelona, Inst. Microelectron.) ; Dauderys, Vainius (Barcelona, Inst. Microelectron.) ; Tsunoda, Isao (Kumamoto Nat. Coll. Tech.) ; Yoneoka, Masashi (Kumamoto Nat. Coll. Tech.) ; Takakura, Kenichiro (Kumamoto Nat. Coll. Tech.) ; Kramberger, Gregor (Stefan Inst., Ljubljana) ; Moll, Michael (CERN)
Silicon carbide (SiC) is a wide bandgap semiconductor with outstanding properties that make it especially appropriate for radiation monitoring in radiation harsh environments and for elevated temperature operation. In this work, radiation effects in electron-, neutron-, and proton-irradiated 4H-SiC p-n junction diodes are investigated by means of electrical characterization, including current–voltage characteristics measured at different temperatures ranging from −50 °C to +200°C. [...]
2023 - 12 p. - Published in : IEEE Trans. Nucl. Sci. 70 (2023) 2285-2296 External link: accepted manuscript

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Electron, Neutron, and Proton Irradiation Effects on SiC Radiation Detectors / Rafí, Joan Marc (Barcelona, Inst. Microelectron.) ; Pellegrini, Giulio (Barcelona, Inst. Microelectron.) ; Godignon, Philippe (Barcelona, Inst. Microelectron.) ; Ugobono, Sofía Otero (Barcelona, Inst. Microelectron.) ; Rius, Gemma (Barcelona, Inst. Microelectron.) ; Tsunoda, Isao (Kumamoto Nat. Coll. Tech.) ; Yoneoka, Masashi (Kumamoto Nat. Coll. Tech.) ; Takakura, Kenichiro (Kumamoto Nat. Coll. Tech.) ; Kramberger, Gregor (Stefan Inst., Ljubljana) ; Moll, Michael (CERN)
Owing to their low dark current, high transparency, high thermal conductivity, and potential radiation hardness, there is a special interest in silicon carbide (SiC) devices for radiation monitoring in radiation harsh environments and with elevated temperatures and, especially, for the plasma diagnostic systems in future nuclear fusion reactors. In this work, four-quadrant p-n junction diodes produced on epitaxial 4H-SiC substrates are studied. [...]
2020 - 9 p. - Published in : IEEE Trans. Nucl. Sci. 67 (2020) 2481-2489

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