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1.
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Numerical simulation of radiation damage effects in p-type and n-type FZ silicon detectors
/ Petasecca, M (Perugia U. ; INFN, Perugia) ; Moscatelli, F (Perugia U. ; INFN, Perugia ; IMM, Bologna) ; Passeri, D (Perugia U. ; INFN, Perugia) ; Pignatel, G U (Perugia U. ; INFN, Perugia)
In the framework of the CERN-RD50 Collaboration, the adoption of p-type substrates has been proposed as a suitable mean to improve the radiation hardness of silicon detectors up to fluencies of $1 \times 10^{16} \rm{n}/cm^2$. In this work two numerical simulation models will be presented for p-type and n-type silicon detectors, respectively. [...]
2006 - 6 p.
- Published in : IEEE Trans. Nucl. Sci. 53 (2006) 2971-2976
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2.
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Numerical analysis of thinned silicon detectors
/ Petasecca, M (Perugia U. ; INFN, Perugia) ; Pignatel, G U (Perugia U. ; INFN, Perugia) ; Moscatelli, F (Perugia U. ; INFN, Perugia ; IMM, Bologna) ; Passeri, D (Perugia U. ; INFN, Perugia) ; Caprai, G (Perugia U.)
In the framework of the CERN-RD50 and INFN-SMART collaboration, we have investigated the possibility of using thin devices as a solution to improve the reliability of silicon detectors after long-term irradiation at the Super-Large Hadron Collider (LHC). In this work, we compare conventional silicon detectors (p-on-n type diodes over a $300 \mu \rm{m}$ thick wafer substrates) with thinned devices ($50–100 \mu \rm{m}$ thick). [...]
2006 - 2 p.
- Published in : Nucl. Instrum. Methods Phys. Res., A 572 (2007) 319-320
In : 10th Pisa Meeting on Advanced Detectors : Frontier Detectors For Frontier Physics, La Biodola, Italy, 21 - 27 May 2006, pp.319-320
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3.
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4.
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A comprehensive numerical simulation of heavily irradiated p-type and n-type silicon detectors
/ Petasecca, Marco (Perugia U. ; INFN, Perugia) ; Moscatelli, Francesco (Perugia U. ; INFN, Perugia ; IMM, Bologna) ; Passeri, Daniele (Perugia U. ; INFN, Perugia) ; Pignatel, Giorgio Umberto (Perugia U. ; INFN, Perugia) ; Scarpello, Carlo (Perugia U.) ; Caprai, Giovanni (Perugia U.)
In the framework of the CERN-RD50 collaboration, the adoption of p-type substrates has been proposed as a suitable mean to improve the radiation hardness of silicon detectors up to fluences of $10^{16} \rm{n}/\rm{cm}^2$. In this work the simulated electrical characteristics of irradiated p-type and n-type detectors are reported, for comparison with experimental measurements collected from the literature. [...]
2005 - 4 p.
- Published in : 10.1109/NSSMIC.2005.1596601
In : 52nd IEEE Nuclear Science Symposium and Medical Imaging Conference, San Juan, Puerto Rico, 23 - 29 Oct 2005, pp.1490-1493
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5.
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Silicon detectors for the sLHC
/ Affolder, A (Liverpool U.) ; Aleev, A (Moscow, ITEP) ; Allport, P P (Liverpool U.) ; Andricek, L (Munich, Max Planck Inst.) ; Artuso, M (Syracuse U.) ; Balbuena, J P (Barcelona, Inst. Microelectron.) ; Barabash, L (Kiev, INR) ; Barber, T (Freiburg U.) ; Barcz, A (Inst. Electron Tech., Warsaw ; Warsaw, Inst. Phys. Chem.) ; Bassignana, D (Barcelona, Inst. Microelectron.) et al.
In current particle physics experiments, silicon strip detectors are widely used as part of the inner tracking layers. A foreseeable large-scale application for such detectors consists of the luminosity upgrade of the Large Hadron Collider (LHC), the super-LHC or sLHC, where silicon detectors with extreme radiation hardness are required. [...]
2011
- Published in : Nucl. Instrum. Methods Phys. Res., A 658 (2011) 11-16
In : 8th International Conference on Radiation Effects on Semiconductor Materials Detectors and Devices, Florence, Italy, 12 - 15 Oct 2010, pp.11-16
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6.
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RD50 Status Report 2008 - Radiation hard semiconductor devices for very high luminosity colliders
/ Balbuena, Juan Pablo (Barcelona, Inst. Microelectron.) ; Bassignana, Daniela (Barcelona, Inst. Microelectron.) ; Campabadal, Francesca (Barcelona, Inst. Microelectron.) ; Díez, Sergio (Barcelona, Inst. Microelectron.) ; Fleta, Celeste (Barcelona, Inst. Microelectron.) ; Lozano, Manuel (Barcelona, Inst. Microelectron.) ; Pellegrini, Giulio (Barcelona, Inst. Microelectron.) ; Rafí, Joan Marc (Barcelona, Inst. Microelectron.) ; Ullán, Miguel (Barcelona, Inst. Microelectron.) ; Creanza, Donato (Bari U. ; INFN, Bari) et al.
The objective of the CERN RD50 Collaboration is the development of radiation hard semiconductor detectors for very high luminosity colliders, particularly to face the requirements of a possible upgrade scenario of the LHC.This document reports the status of research and main results obtained after the sixth year of activity of the collaboration..
CERN-LHCC-2010-012 ; LHCC-SR-003.
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2010. - 73 p.
Fulltext
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7.
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8.
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Numerical simulation of radiation damage effects in p-type silicon detectors
/ Petasecca, M ; Moscatelli, F ; Passeri, D ; Pignatel, G U ; Scarpello, C
2006
- Published in : Nucl. Instrum. Methods Phys. Res., A 563 (2006) 192-195
In : 7th International Workshop on Radiation Imaging Detectors, Grenoble, France, 4 - 7 Jul 2005, pp.192-195
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9.
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10.
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Radiation-hard semiconductor detectors for SuperLHC
/ Bruzzi, Mara ; Adey, J ; Al-Ajili, A A ; Alexandrov, P ; Alfieri, G ; Allport, Philip P ; Andreazza, A ; Artuso, M ; Assouak, S ; Avset, B S et al.
An option of increasing the luminosity of the Large Hadron Collider (LHC) at CERN to 10/sup 35/ cm-/sup 2/s-/sup 1/ has been envisaged to extend the physics reach of the machine. An efficient tracking down to a few centimetres from the interaction point will be required to exploit the physics potential of the upgraded LHC. [...]
2005
- Published in : Nucl. Instrum. Methods Phys. Res., A 541 (2005) 189-201
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