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1.
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Mobility Degradation of 28-nm Bulk MOSFETs Irradiated to Ultrahigh Total Ionizing Doses
/ Zhang, C -M (Ecole Polytechnique, Lausanne) ; Jazaeri, F (Ecole Polytechnique, Lausanne) ; Borghello, G (U. Udine (main) ; CERN) ; Mattiazzo, S (INFN, Padua ; U. Padua (main)) ; Baschirotto, A (INFN, Milan ; Milan Bicocca U.) ; Enz, C (Ecole Polytechnique, Lausanne)
Using the Y–function method, this paper experimentally investigates the effects of total ionizing dose up to 1 Grad on
the channel mobility of a commercial 28-nm bulk CMOS process..
2018 - 2 p.
- Published in : 10.1109/cicta.2018.8705713
In : 2018 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA), Beiling, China, 21 -23 Nov 2018, pp.162 - 163
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2.
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A generalized EKV charge-based MOSFET model including oxide and interface traps
/ Zhang, Chun-Min (Ecole Polytechnique, Lausanne) ; Jazaeri, Farzan (Ecole Polytechnique, Lausanne) ; Borghello, Giulio (CERN) ; Mattiazzo, Serena (CERN) ; Baschirotto, Andrea (INFN, Padua) ; Enz, Christian (Ecole Polytechnique, Lausanne)
This paper presents a generalized EKV charge-based MOSFET model that includes the effects of trapped charges
in the oxide bulk and at the silicon/oxide interface. It is shown that in the presence of oxide- and interface trapped charges, the mobile charge density can still be linearized but with respect to both the surface potential and the channel voltage. [...]
2021 - 9 p.
- Published in : Solid State Electron. 177 (2021) 107951
Fulltext: PDF;
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3.
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The new octal amplifier–shaper–discriminator chip for the ATLAS MDT chambers at HL-LHC
/ Abovyan, S (Munich, Max Planck Inst.) ; Danielyan, V (Munich, Max Planck Inst.) ; Fras, M (Munich, Max Planck Inst.) ; Kortner, O (Munich, Max Planck Inst.) ; Kroha, H (Munich, Max Planck Inst.) ; Richter, R (Munich, Max Planck Inst.) ; Zhao, Y (Munich, Max Planck Inst.) ; Baschirotto, A (Milan Bicocca U.) ; De Matteis, M (Milan Bicocca U.) ; Resta, F (Milan Bicocca U.)
In order to fully exploit the physics potential of the ATLAS experiment at the HL-LHC, the trigger rate of and maximum latency of the first-level trigger system will be increased to 1 MHz and 10μs , respectively. In addition, a new first-level muon track trigger with high momentum resolution based on the ATLAS precision Muon Drift-Tube (MDT) chambers will be employed which requires triggerless readout. [...]
Elsevier, 2019 - 2 p.
- Published in : Nucl. Instrum. Methods Phys. Res., A 936 (2019) 374-375
In : Frontier Detectors for Frontier Physics: XIV Pisa Meeting on Advanced Detectors, La Biodola, Isola D'elba, Italy, 27 May - 2 Jun 2018, pp.374-375
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4.
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Characterization of GEMINI, a 16-channels programmable readout interface for Triple-GEM detectors in 180nm CMOS
/ Mangiagalli, Luca ; Croci, Gabriele ; De Matteis, Marcello ; Tagnani, Diego ; Corradi, Giovanni ; Murtas, Fabrizio ; Gorini, Giuseppe ; Baschirotto, Andrea
The recent advances in GEM detector development has led to the requirement of a custom readout to fully exploit the advantages of this technology. GEM detectors can be realized with various shapes, also irregular, and high number of channels. [...]
SISSA, 2019 - 5 p.
- Published in : PoS TWEPP2018 (2019) 165
In : Topical Workshop on Electronics for Particle Physics, Antwerp, Belgique, 17 - 21 Sep 2018, pp.165
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5.
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Bias Dependence of Total Ionizing Dose Effects on 28-nm Bulk MOSFETs
/ Zhang, Chun-Min (Ecole Polytechnique, Lausanne) ; Jazaeri, Farzan (Ecole Polytechnique, Lausanne) ; Borghello, Giulio (CERN ; U. Udine (main)) ; Mattiazzo, Serena (INFN, Padua ; U. Padua (main)) ; Baschirotto, Andrea (INFN, Milan Bicocca ; Milan Bicocca U.) ; Enz, Christian (Ecole Polytechnique, Lausanne)
/ScalTech28project
This paper investigates the effects of total ionizing dose up to 1 Grad on 28-nm bulk MOSFETs under different bias conditions during irradiation. The aim is to assess the potential use of this commercial bulk CMOS technology in the future high-luminosity Large Hadron Collider at CERN that will require highly improved radiation-tolerant tracking systems..
2019 - 3 p.
- Published in : 10.1109/NSSMIC.2018.8824379
In : 2018 IEEE Nuclear Science Symposium and Medical Imaging Conference (NSS/MIC 2018), Sydney, Australia, 10 - 17 Nov 2018, pp.8824379
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6.
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An 8-Channel ASD in 130 nm CMOS for ATLAS Muon Drift Tube Readout at the HL-LHC
/ Fras, Markus (Dresden, Max Planck Inst.) ; Abovyan, Sergey (Munich, Max Planck Inst.) ; Danielyan, Varuzhan (Munich, Max Planck Inst.) ; Kroha, Hubert (Munich, Max Planck Inst.) ; Nowak, Sebastian (Munich, Max Planck Inst.) ; Richter, Robert (Munich, Max Planck Inst.) ; Weber, Bradley (Munich, Max Planck Inst.) ; Zhao, Yazhou (Munich, Max Planck Inst.) ; Baschirotto, Andrea (Milan Bicocca U.) ; De Matteis, Marcello (Milan Bicocca U.) et al.
Spatial resolution and efficiency of the ATLAS muon Monitored Drift Tubes (MDT) depend on drift time resolution, noise levels, and accurate threshold setting. A new 130~nm readout device is developed and optimized for the required time resolution, to guarantee rise times below 10~ns with acceptable time slewing effects. [...]
SISSA, 2018 - 5 p.
- Published in : PoS TWEPP-17 (2017) 004
Fulltext: PDF; External link: PoS server
In : Topical Workshop on Electronics for Particle Physics, Santa Cruz, Ca, United States Of America, 11 - 15 Sep 2017, pp.004
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7.
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Characterization and Modeling of Gigarad-TID-Induced Drain Leakage Current of 28-nm Bulk MOSFETs
/ Zhang, Chun-Min (Ecole Polytechnique, Lausanne) ; Jazaeri, Farzan (Ecole Polytechnique, Lausanne) ; Borghello, Giulio (CERN ; U. Udine (main)) ; Faccio, Federico (CERN) ; Mattiazzo, Serena (Padua U. ; INFN, Padua) ; Baschirotto, Andrea (Milan Bicocca U. ; INFN, Milan Bicocca) ; Enz, Christian (Ecole Polytechnique, Lausanne)
This paper characterizes and models the effects of total ionizing dose (TID) up to 1 Grad(SiO$_2$) on the drain leakage current of nMOSFETs fabricated with a commercial 28-nm bulk CMOS process. Experimental comparisons among individual nMOSFETs of various sizes provide insight into the TID-induced lateral parasitic devices, which contribute the most to the significant increase up to four orders of magnitude in the drain leakage current. [...]
2018 - 10 p.
- Published in : IEEE Trans. Nucl. Sci. 66 (2018) 38-47
Fulltext: PDF;
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8.
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GigaRad total ionizing dose and post-irradiation effects on 28 nm bulk MOSFETs
/ Zhang, C M (Ecole Polytechnique, Lausanne) ; Jazaeri, F (Ecole Polytechnique, Lausanne) ; Pezzotta, A (Ecole Polytechnique, Lausanne) ; Bruschini, C (Ecole Polytechnique, Lausanne) ; Borghello, G (CERN ; U. Udine (main)) ; Faccio, F (CERN) ; Mattiazzo, S (U. Padua (main)) ; Baschirotto, A (Milan Bicocca U.) ; Enz, C (Ecole Polytechnique, Lausanne)
The DC performance of both $n$- and $p$MOSFETs fabricated in a commercial-grade 28 nm bulk CMOS process has been studied up to 1 Grad of total ionizing dose and at post-irradiation annealing. The aim is to assess the potential use of such an advanced CMOS technology in the forthcoming upgrade of the Large Hadron Collider at CERN. [...]
2017 - 4 p.
- Published in : 10.1109/NSSMIC.2016.8069869
In : IEEE Nuclear Science Symposium and Medical Imaging Conference, Strasbourg, France, 29 Oct - 6 Nov 2016, pp.8069869
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9.
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An eight-channels 0.13-$\mu \text{m}$-CMOS front end for ATLAS muon-drift-tubes detectors
/ De Matteis, Marcello (Milan Bicocca U.) ; Resta, Federica (Milan Bicocca U.) ; Richter, Robert (Munich, Max Planck Inst.) ; Kroha, Hubert (Munich, Max Planck Inst.) ; Fras, Markus (Munich, Max Planck Inst.) ; Zhao, Yazhou (Munich, Max Planck Inst.) ; Abovyan, Sergey (Munich, Max Planck Inst.) ; Baschirotto, Andrea (Milan Bicocca U.)
Abstract: An eight-channel readout front end for Large Hadron Collider (LHC) ATLAS muon-drift-tubes detectors is hereby presented (defined 8 × AFE). The system is composed by the cascade of the analog signal processing front end and the Wilkinson A/D, performing both time-over-threshold and charge measurement. [...]
2017 - 10 p.
- Published in : IEEE Sensors J. 17 (2017) 3406-3415
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10.
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Total ionizing dose effects on analog performance of 28 nm bulk MOSFETs
/ Zhang, C M (Ecole Polytechnique, Lausanne) ; Jazaeri, F (Ecole Polytechnique, Lausanne) ; Pezzotta, A (Ecole Polytechnique, Lausanne) ; Bruschini, C (Ecole Polytechnique, Lausanne) ; Borghello, G (CERN ; U. Udine (main)) ; Mattiazzo, S (U. Padua (main)) ; Baschirotto, A (INFN, Milan Bicocca ; Milan Bicocca U.) ; Enz, C (Ecole Polytechnique, Lausanne)
This paper uses the simplified charge-based EKV MOSFET model for studying the effects of total ionizing dose (TID) on analog parameters and figures-of-merit (FoMs) of 28nm bulk MOSFETs. These effects are demonstrated to be fully captured by the five key parameters of the simplified EKV model. [...]
2017 - 4 p.
- Published in : 10.1109/ESSDERC.2017.8066584
In : 47th European Solid-State Device Research Conference, Leuven, Belgium, 11 - 14 Sep 2017, pp.30-33
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