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CERN Document Server 5 записей найдено  Поиск длился 0.66 секунд. 
1.
Special NSREC 2022 Issue of the IEEE Transactions on Nuclear Science : Editor Comments / Fleetwood, Dan (Vanderbilt U.) ; Brown, Dennis ; Quinn, Heather (Los Alamos) ; Robinson, William (Georgia Tech) ; Moss, Steven ; Goiffon, Vincent ; Paillet, Philippe ; Ding, Lili ; Loveless, Daniel (U. Tennessee, Chattanooga) ; Black, Jeffrey (Sandia) et al.
The April 2023 Special Issue of the IEEE Transactions on Nuclear Science (TNS) contains selected papers from the 59th annual IEEE International Nuclear and Space Radiation Effects Conference (NSREC), which after two years of virtual conferences, was held in person from July 18 through July 22, 2022, in Provo, UT, USA. The 2022 IEEE NSREC was sponsored by the IEEE Nuclear and Plasma Sciences Society. [...]
2023 - 1 p. - Published in : IEEE Trans. Nucl. Sci. 70 (2023) 300
In : 2022 IEEE Nuclear and Space Radiation Effects Conference, Provo, Utah, USA, 18 - 23 Jul 2022, pp.300
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2.
Special NSREC 2023 Issue of the IEEE Transactions on Nuclear Science Editor Comments / Fleetwood, Dan (Vanderbilt U.) ; Quinn, Heather ; Moss, Steven (Aerospace Corp.) ; Goiffon, Vincent ; Paillet, Philippe ; Ding, Lili ; Loveless, Daniel (Indiana U.) ; Black, Jeffrey (Sandia) ; Faccio, Federico (CERN) ; Barth, Janet (NASA, JFK)
The April 2024 Special Issue of the IEEE Transactions on Nuclear Science (TNS) contains selected papers from the 60th annual IEEE International Nuclear and Space Radiation Effects Conference (NSREC), which was held in Kansas City, MO, USA, from July 24 to 28, 2023. The IEEE NSREC is sponsored by the IEEE Nuclear and Plasma Sciences Society. [...]
2024 - 1 p. - Published in : IEEE Trans. Nucl. Sci. 71 (2024) 367
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3.
Comments by the Editors / Fleetwood, Dan (Vanderbilt U.) ; Quinn, Heather (Los Alamos) ; Robinson, William (Georgia Tech., Atlanta) ; Moss, Steven (Aerospace Corp.) ; Goiffon, Vincent ; Paillet, Philippe (CEA DAM) ; Ding, Lili ; Loveless, Daniel (U. Tennessee, Chattanooga) ; Black, Jeffrey (Sandia) ; Faccio, Federico (CERN) et al.
The August 2023 Special Issue of IEEE Transactions on Nuclear Science (TNS) contains approximately 70 peer-reviewed journal articles prepared on the basis of presentations made at the 2022 Conference on Radiation and Its Effects on Components and Systems (RADECS) held in Venice, Italy, October 3–7, 2022. Additional papers presented at RADECS 2022 are available in the conference proceedings, available through IEEE Xplore..
2023 - 1 p. - Published in : IEEE Trans. Nucl. Sci. 70 (2023) 1529
In : European Conference on Radiation and its Effects on Components and Systems, Venice, Italy, 3 - 7 Oct 2022, pp.1529
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4.
Radiation tolerance study of a commercial 65 nm CMOS technology for high energy physics applications / Ding, Lili (Padua U. ; INFN, Padua ; Northwest Inst. Nucl. Tech., Xian) ; Gerardin, Simone (Padua U. ; INFN, Padua) ; Bagatin, Marta (Padua U.) ; Bisello, Dario (Padua U. ; INFN, Padua) ; Mattiazzo, Serena (Padua U.) ; Paccagnella, Alessandro (Padua U. ; INFN, Padua)
This paper reports the radiation tolerance study of a commercial 65 nm technology, which is a strong candidate for the Large Hadron Collider applications. After exposure to 3 MeV protons till 1 Grad dose, the 65 nm CMOS transistors, especially the pMOSFETs, showed severe long-term degradation mainly in the saturation drain currents. [...]
2016 - 4 p. - Published in : Nucl. Instrum. Methods Phys. Res., A 831 (2016) 265-268
In : 10th International "Hiroshima" Symposium on the Development and Application of Semiconductor Tracking Detectors, Xi'an, China, 25 - 29 Sep 2015, pp.265-268
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5.
Radiation Vulnerability in 65 nm CMOS I/O Transistors after Exposure to Grad Dose / Ding, Lili (U. Padua (main)) ; Gerardin, Simone (U. Padua (main)) ; Bagatin, Marta (U. Padua (main)) ; Mattiazzo, Serena (U. Padua (main)) ; Bisello, Dario (INFN, Padua) ; Paccagnella, Alessandro (U. Padua (main))
We studied the TID response of I/O 65 nm MOSFETs, which are strong candidates for LHC upgrade. Enhanced radiation vulnerability in I/O transistors appeared, due to radiation-induced interface states and charge accumulation..
2015 - 5 p. IEEE Nucl.Sci.Symp.Conf.Rec. - Published in : 10.1109/RADECS.2015.7365655
In : Conference on Radiation and its Effects on Components and Systems, Moscow, Russia, 14 - 18 Sep 2015, pp.7365655
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