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1.
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Lithium ion irradiation effects on epitaxial silicon detectors
/ Candelori, A (INFN, Padua ; Padua U.) ; Bisello, D (INFN, Padua ; Padua U.) ; Rando, R (INFN, Padua ; Padua U.) ; Schramm, A (Hamburg U., Inst. Exp. Phys. II) ; Contarato, D (Hamburg U., Inst. Exp. Phys. II) ; Fretwurst, E (Hamburg U., Inst. Exp. Phys. II) ; Lindstrom, G (Hamburg U., Inst. Exp. Phys. II) ; Wyss, J (Cassino U. ; INFN, Pisa)
Diodes manufactured on a thin and highly doped epitaxial silicon layer grown on a Czochralski silicon substrate have been irradiated by high energy lithium ions in order to investigate the effects of high bulk damage levels. This information is useful for possible developments of pixel detectors in future very high luminosity colliders because these new devices present superior radiation hardness than nowadays silicon detectors. [...]
2004 - 7 p.
- Published in : IEEE Trans. Nucl. Sci. 51 (2004) 1766-1772
In : 13th IEEE-NPSS Real Time Conference 2003, Montreal, Canada, 18 - 23 May 2003, pp.1766-1772
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2.
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Radiation hardness of different silicon materials after high-energy electron irradiation
/ Dittongo, S (Trieste U. ; INFN, Trieste) ; Bosisio, L (Trieste U. ; INFN, Trieste) ; Ciacchi, M (Trieste U.) ; Contarato, D (Hamburg U., Inst. Exp. Phys. II) ; D'Auria, G (Sincrotrone Trieste) ; Fretwurst, E (Hamburg U., Inst. Exp. Phys. II) ; Lindstrom, G (Hamburg U., Inst. Exp. Phys. II)
The radiation hardness of diodes fabricated on standard and diffusion-oxygenated float-zone, Czochralski and epitaxial silicon substrates has been compared after irradiation with 900 MeV electrons up to a fluence of $2.1 \times 10^{15} \ \rm{e} / cm^2$. The variation of the effective dopant concentration, the current related damage constant $\alpha$ and their annealing behavior, as well as the charge collection efficiency of the irradiated devices have been investigated..
2004 - 7 p.
- Published in : Nucl. Instrum. Methods Phys. Res., A 530 (2004) 110-116
In : 6th International Conference on Large Scale Applications and Radiation Hardness of Semiconductor Detectors, Florence, Italy, 29 Sep - 1 Oct 2003, pp.110-116
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3.
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Studies of Vertex Tracking with SOI Pixel Sensors for Future Lepton Colliders
/ Battaglia, Marco (UC, Santa Cruz ; LBL, Berkeley ; CERN) ; Contarato, Devis (LBL, Berkeley) ; Denes, Peter (LBL, Berkeley) ; Liko, Dietrich (Vienna, OAW) ; Mattiazzo, Serena (INFN, Padua ; Padua U.) ; Pantano, Devis (INFN, Padua ; Padua U.)
This paper presents a study of vertex tracking with a beam hodoscope consisting of three layers of monolithic pixel sensors in SOI technology on high-resistivity substrate. We study the track extrapolation accuracy, two-track separation and vertex reconstruction accuracy in pion-Cu interactions with 150 and 300 GeV/c pions at the CERN SPS. [...]
arXiv:1204.2910.-
2012 - 15 p.
- Published in : Nucl. Instrum. Methods Phys. Res., A 681 (2012) 61-67
Preprint: PDF; External link: Preprint
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4.
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Characterisation of a Thin Fully Depleted SOI Pixel Sensor with High Momentum Charged Particles
/ Battaglia, Marco (LBL, Berkeley ; UC, Santa Cruz) ; Bisello, Dario (Padua U. ; INFN, Padua) ; Contarato, Devis (LBL, Berkeley) ; Denes, Peter (LBL, Berkeley) ; Giubilato, Piero (Padua U. ; INFN, Padua) ; Mattiazzo, Serena (Padua U. ; INFN, Padua) ; Pantano, Devis (Padua U. ; INFN, Padua)
This paper presents the results of the characterisation of a thin, fully depleted pixel sensor manufactured in SOI technology on high-resistivity substrate with high momentum charged particles. The sensor is thinned to 70 $\mu$m and a thin phosphor layer contact is implanted on the back-plane. [...]
arXiv:1202.1105.-
2012 - 8 p.
- Published in : Nucl. Instrum. Methods Phys. Res., A 676 (2012) 50-53
Preprint: PDF; External link: Preprint
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5.
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Tests of monolithic pixel detectors in SOI technology with depleted substrate
/ Giubilato, P (UC, Santa Cruz ; CERN ; Padua U. ; INFN, Padua) ; Bisello, D (Padua U. ; INFN, Padua) ; Contarato, D (LBL, Berkeley) ; Kim, T S (UC, Santa Cruz) ; Denes, P (LBL, Berkeley) ; Pantano, D (Padua U. ; INFN, Padua) ; Zalusky, S (UC, Santa Cruz) ; Pozzobon, N (Padua U. ; INFN, Padua) ; Mattiazzo, S (Padua U. ; INFN, Padua) ; Battaglia, M (UC, Santa Cruz ; LBL, Berkeley ; CERN) et al.
This paper reviews the R\&D; program on monolithic pixel sensors in silicon-on-insulator technology carried out by LBNL, the University and INFN, Padova and SCIPP-UCSC. The main issues addressed by the R\&D;, back-gating and radiation tolerance, are discussed together with the preliminary results from the characterization of the latest chip in this technology. [...]
2011
- Published in : Nucl. Instrum. Methods Phys. Res., A 650 (2011) 184-188
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6.
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Characterisation of a Pixel Sensor in 0.20 micron SOI Technology for Charged Particle Tracking
/ Battaglia, Marco (UC, Santa Cruz ; LBL, Berkeley ; CERN) ; Bisello, Dario (Padua U. ; INFN, Padua) ; Contarato, Devis (LBL, Berkeley) ; Denes, Peter (LBL, Berkeley) ; Giubilato, Piero (UC, Santa Cruz ; Padua U. ; INFN, Padua) ; Mattiazzo, Serena (Padua U. ; INFN, Padua) ; Pantano, Devis (Padua U. ; INFN, Padua) ; Zalusky, Sarah (UC, Santa Cruz)
This paper presents the results of the characterisation of a pixel sensor manufactured in OKI 0.2 micron SOI technology integrated on a high-resistivity substrate, and featuring several pixel cell layouts for charge collection optimisation. The sensor is tested with short IR laser pulses, X-rays and 200 GeV pions. [...]
arXiv:1103.0881.-
2011 - 15 p.
- Published in : Nucl. Instrum. Methods Phys. Res., A 654 (2011) 258-265
Fulltext: PDF; External link: Preprint
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7.
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Total dose effects on deep-submicron SOI technology for Monolithic Pixel Sensor development
/ Mattiazzo, S (Padua U. ; INFN, Padua) ; Battaglia, M (UC, Berkeley ; LBL, Berkeley) ; Bisello, D (Padua U. ; INFN, Padua) ; Contarato, D (LBL, Berkeley) ; Denes, P (LBL, Berkeley) ; Giubilato, P (Padua U. ; INFN, Padua ; LBL, Berkeley) ; Pantano, D (Padua U. ; INFN, Padua) ; Pozzobon, N (Padua U. ; INFN, Padua) ; Tessaro, M (Padua U. ; INFN, Padua) ; Wyss, J (INFN, Padua ; Cassino U.)
We developed and characterized Monolithic pixel detectors in deep-submicron Fully Depleted (FD) Silicon On Insulator (SOI) technology. This paper presents the first studies of total dose effects from ionizing radiation performed on single transistor test structures. [...]
CERN, 2009
Published version from CERN: PDF;
In : Topical Workshop on Electronics for Particle Physics, Paris, France, 21 - 25 Sep 2009, pp.591-595 (CERN-2009-006)
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8.
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Development of radiation hard semiconductor
: devices for very high luminosity colliders
/ Mauro De Palma, D (INFN, Bari) ; Radicci, V (INFN, Bari) ; Lozano, M (Barcelona, Autonoma U.) ; Campabadal, F (Barcelona, Autonoma U.) ; Ullán, M (Barcelona, Autonoma U.) ; Martínez, C (Barcelona, Autonoma U.) ; Fleta, C (Barcelona, Autonoma U.) ; Key, M (Barcelona, Autonoma U.) ; Raffí, J M (Barcelona, Autonoma U.) ; Kordas, G (Democritos Nucl. Res. Ctr.) et al.
CERN-LHCC-2002-003 ; LHCC-P-6.
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2002. - 36 p.
Full text - CERN library copies
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