CERN Accelerating science

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1.
Test beam characterization of irradiated 3D pixel sensors / Garcia Alonso, Andrea (Cantabria Inst. of Phys.) ; Curras Rivera, Esteban (Cantabria Inst. of Phys.) ; Duarte Campderros, Jordi (Cantabria Inst. of Phys.) ; Fernandez Garcia, Marcos (Cantabria Inst. of Phys.) ; Gomez, Gervasio (Cantabria Inst. of Phys.) ; Gonzalez Sanchez, Javier (Cantabria Inst. of Phys.) ; Silva Jimenez, Esther (Strasbourg, IPHC) ; Vila Alvarez, Ivan (Cantabria Inst. of Phys.) ; Jaramillo Echeverria, Richard William (Cantabria Inst. of Phys.) ; Meschini, Marco (INFN, Florence) et al.
Due to the large expected instantaneous luminosity, the future HL-LHC upgrade sets strong requirements on the radiation hardness of the CMS detector Inner Tracker. Sensors based on 3D pixel technology, with its superior radiation tolerance, comply with these extreme conditions. [...]
CMS-CR-2019-161.- Geneva : CERN, 2019 - 12 p. Fulltext: PDF;
In : 21st International Workshop on Radiation Imaging Detectors, Kolympari, Chania, Greece, 7 - 12 Jul 2019
2.
A new generation of radiation hard 3D pixel sensors for the ATLAS upgrade / Terzo, Stefano (Barcelona, IFAE) ; Grinstein, Sebastian (Barcelona, IFAE ; ICREA, Barcelona) ; Manna, Maria (Barcelona, Inst. Microelectron.) ; Pellegrini, Giulio (Barcelona, Inst. Microelectron.) ; Quirion, David (Barcelona, Inst. Microelectron.)
The ATLAS experiment at the Large Hadron Collider (LHC) will replace its inner tracker system to cope with the extreme particle fluence expected after the High Luminosity upgrade of the accelerator (HL-LHC). The 3D silicon sensor technology has been selected as baseline to instrument the innermost layer of the pixel detector in the future ATLAS Inner Tracker (ITk). [...]
2020 - 4 p. - Published in : Nucl. Instrum. Methods Phys. Res., A 982 (2020) 164587
3.
Simulations of 3D-Si sensors for the innermost layer of the ATLAS pixel upgrade / Baselga, Marta (Barcelona, Inst. Microelectron.) ; Pellegrini, Giulio (Barcelona, Inst. Microelectron.) ; Quirion, David (Barcelona, Inst. Microelectron.)
The LHC is expected to reach luminosities up to 3000fb-1 and the innermost layer of the ATLAS upgrade plans to cope with higher occupancy and to decrease the pixel size. 3D-Si sensors are a good candidate for the innermost layer of the ATLAS pixel upgrade since they exhibit good performance under high fluences and the new designs will have smaller pixel size to fulfill the electronics expectations. [...]
arXiv:1606.08747.- 2017-03-01 - 10 p. - Published in : Nucl. Instrum. Methods Phys. Res., A 847 (2017) 67-76 Fulltext: PDF; External link: Preprint
4.
First measurements of segmented silicon tracking detectors with built-in multiplication layer / Cavallaro, Emanuele (Barcelona, IFAE) ; Lange, Jörn (Barcelona, IFAE) ; Lopez Paz, Ivan (Barcelona, IFAE) ; Grinstein, Sebastian (Barcelona, IFAE) ; Baselga, Marta (Barcelona, Inst. Microelectron.) ; Greco, Virginia (Barcelona, Inst. Microelectron.) ; Quirion, David (Barcelona, Inst. Microelectron.) ; Pellegrini, Giulio (Barcelona, Inst. Microelectron.)
Silicon sensors with a built-in multiplication layer, also known as Low Gain Avalanche Detectors (LGAD), are a new technology of potentially radiation hard silicon sensors developed at CNM (Centro Nacional de Microelectrónica) in the framework of the CERN-RD50 collaboration. The concept of the LGAD technology is to produce a tracking sensor with an intrinsic low gain due to charge multiplication in order to enhance the signal-to-noise ratio. [...]
2015 - 5 p. - Published in : Nucl. Instrum. Methods Phys. Res., A 796 (2015) 136-140
In : 10th International Conference on Radiation Effects on Semiconductor Materials, Detectors, and Devices, Florence, Italy, 8 - 10 Oct 2014, pp.136-140
5.
Rad-hard vertical JFET switch for the HV-MUX system of the ATLAS upgrade Inner Tracker / Fernandez-Martinez, Pablo (Barcelona, Inst. Microelectron.) ; Ullan, Miguel (Barcelona, Inst. Microelectron.) ; Flores, David (Barcelona, Inst. Microelectron.) ; Hidalgo, Salvador (Barcelona, Inst. Microelectron.) ; Quirion, David (Barcelona, Inst. Microelectron.) ; Lynn, David (Brookhaven)
This work presents a new silicon vertical JFET (V-JFET) device, based on the trenched 3D-detector technology developed at IMB-CNM, to be used as switches for the High-Voltage powering scheme of the ATLAS upgrade Inner Tracker. The optimization of the device characteristics is performed by 2D and 3D TCAD simulations. [...]
arXiv:1511.00416.- 2016-01-20 - 10 p. - Published in : JINST 11 (2016) C01043 Fulltext: PDF; IOP Open Access article: PDF; External link: Preprint
In : Topical Workshop on Electronics for Particle Physics, Lisbon, Portugal, 28 Sep - 2 Oct 2015, pp.C01043
6.
Design and Fabrication of an Optimum Peripheral Region for Low Gain Avalanche Detectors / Fernandez-Martinez, Pablo (Barcelona, Inst. Microelectron.) ; Flores, David (Barcelona, Inst. Microelectron.) ; Hidalgo, Salvador (Barcelona, Inst. Microelectron.) ; Greco, Virginia (Barcelona, Inst. Microelectron.) ; Merlos, Angel (Barcelona, Inst. Microelectron.) ; Pellegrini, Giulio (Barcelona, Inst. Microelectron.) ; Quirion, David (Barcelona, Inst. Microelectron.)
Low Gain Avalanche Detectors (LGAD) represent a remarkable advance in high energy particle detection, since they provide a moderate increase (gain ~10) of the collected charge, thus leading to a notable improvement of the signal-to-noise ratio, which largely extends the possible application of Silicon detectors beyond their present working field. The optimum detection performance requires a careful implementation of the multiplication junction, in order to obtain the desired gain on the read out signal, but also a proper design of the edge termination and the peripheral region, which prevents the LGAD detectors from premature breakdown and large leakage current. [...]
arXiv:1510.08626.- 2016-03-17 - 8 p. - Published in : Nucl. Instrum. Methods Phys. Res., A 821 (2016) 93-100 Fulltext: PDF; External link: Preprint
7.
Prototype ATLAS IBL Modules using the FE-I4A Front-End Readout Chip / ATLAS IBL Collaboration
The ATLAS Collaboration will upgrade its semiconductor pixel tracking detector with a new Insertable B-layer (IBL) between the existing pixel detector and the vacuum pipe of the Large Hadron Collider. The extreme operating conditions at this location have necessitated the development of new radiation hard pixel sensor technologies and a new front-end readout chip, called the FE-I4. [...]
arXiv:1209.1906; AIDA-PUB-2012-010.- 2012 - 45 p. - Published in : JINST 7 (2012) P11010 Fulltext: PDF; External link: Preprint
8.
Layout of Silicon Micro-Strip Ladders / Bergauer, Thomas (HEPHY OEAW Vienna) ; Dragicevic, Marko (HEPHY OEAW Vienna) ; Treberspurg, Wolfgang (HEPHY OEAW Vienna) ; Dieguez, Angel (Univ. Barcelona) ; Montiel, Andreu (Univ. Barcelona) ; Alonso, Oscar (Univ. Barcelona) ; Casanova, Raimon (Univ. Barcelona) ; Dolezal, Zdenek (CUNI Prague) ; Kvasnicka, Peter (CUNI Prague) ; Moya, David (IFCA CSIC-UC) et al.
AIDA-MS39.- Geneva : CERN, 2012 AIDA, 39 Fulltext: PDF;

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