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1.
Study of interpad-gap of HPK 3.1 production LGADs with Transient Current Technique / Bharthuar, Shudhashil (Helsinki Inst. of Phys.) ; Ott, J (Helsinki Inst. of Phys. ; Aalto U.) ; Helariutta, K (Helsinki U.) ; Litichevskyi, V (Helsinki Inst. of Phys. ; Helsinki U.) ; Brücken, E (Helsinki Inst. of Phys. ; Helsinki U.) ; Gädda, A (Helsinki Inst. of Phys.) ; Martikainen, L (Helsinki Inst. of Phys. ; Helsinki U.) ; Kirschenmann, S (Helsinki Inst. of Phys. ; Helsinki U.) ; Naaranoja, T (Helsinki Inst. of Phys. ; Helsinki U.) ; Luukka, P (Helsinki Inst. of Phys. ; Lappeenranta U. Tech.) /CMS Collaboration
The Phase-2 upgrade of the Large Hadron Collider (LHC) to High-Luminosity LHC (HL-LHC) allows an increase in the operational luminosity value by a factor of 5--7 that will result in delivering 3000~fb$^{-1}$ or more integrated luminosity. Due to high luminosity, the number of interactions per bunch crossings (pileup) will increase up to a value of 140--200. [...]
CMS-CR-2020-051.- Geneva : CERN, 2020 - 9 p. - Published in : Nucl. Instrum. Methods Phys. Res., A 979 (2020) 164494 Fulltext: PDF; Fulltext from publisher: PDF;
In : 12th international "Hiroshima" Symposium on the Development and Application of Semiconductor Tracking Detectors (HSTD), Hiroshima, Japan, 14 - 18 Dec 2019, pp.164494
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2.
The CMS Phase-1 Pixel Detector Upgrade / CMS Tracker Group of the CMS Collaboration
The CMS detector at the CERN LHC features a silicon pixel detector as its innermost subdetector. The original CMS pixel detector has been replaced with an upgraded pixel system (CMS Phase-1 pixel detector) in the extended year-end technical stop of the LHC in 2016/2017. [...]
arXiv:2012.14304.- 2021-02-22 - 84 p. - Published in : JINST 16 (2021) P02027 Fulltext: 2012.14304 - PDF; fermilab-pub-20-697-cms - PDF; Fulltext from Publisher: PDF; Fulltext from publisher: PDF; External link: Fermilab Accepted Manuscript
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3.
Processing of n+/p−/p+ strip detectors with atomic layer deposition (ALD) grown Al2O3 field insulator on magnetic Czochralski silicon (MCz-si) substrates / Härkönen, J (Helsinki Inst. of Phys.) ; Tuovinen, E (Unlisted, FI ; Helsinki Inst. of Phys.) ; Luukka, P (Helsinki Inst. of Phys.) ; Gädda, A (Helsinki Inst. of Phys.) ; Mäenpää, T (Helsinki Inst. of Phys.) ; Tuominen, E (Helsinki Inst. of Phys.) ; Arsenovich, T (Helsinki Inst. of Phys.) ; Junkes, A (Hamburg U.) ; Wu, X (Unlisted, FI) ; Li, Z (Xiangtan U.)
Detectors manufactured on p-type silicon material are known to have significant advantages in very harsh radiation environment over n-type detectors, traditionally used in High Energy Physics experiments for particle tracking. In p-type (n+ segmentation on p substrate) position-sensitive strip detectors, however, the fixed oxide charge in the silicon dioxide is positive and, thus, causes electron accumulation at the Si/SiO2 interface. [...]
2016 - 6 p. - Published in : Nucl. Instrum. Methods Phys. Res., A 828 (2016) 46-51
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4.
Test Beam Performance Measurements for the Phase I Upgrade of the CMS Pixel Detector / Dragicevic, M. (Vienna, OAW) ; Friedl, M. (Vienna, OAW) ; Hrubec, J. (Vienna, OAW) ; Steininger, H. (Vienna, OAW) ; Gädda, A. (Helsinki Inst. of Phys.) ; Härkönen, J. (Helsinki Inst. of Phys.) ; Lampén, T. (Helsinki Inst. of Phys.) ; Luukka, P. (Helsinki Inst. of Phys.) ; Peltola, T. (Helsinki Inst. of Phys.) ; Tuominen, E. (Helsinki Inst. of Phys.) et al.
A new pixel detector for the CMS experiment is being built, owing to the instantaneous luminosities anticipated for the Phase I Upgrade of the LHC. The new CMS pixel detector provides four-hit tracking while featuring a reduced material budget as well as new cooling and powering schemes. [...]
arXiv:1706.00222; CMS-NOTE-2017-002; CERN-CMS-NOTE-2017-002.- Geneva : CERN, 2017-05-30 - 22 p. - Published in : JINST 12 (2017) P05022 Fulltext: 10.1088_1748-0221_12_05_P05022 - PDF; openaccess_Dragicevic_2017_J._Inst._12_P05022 - PDF; NOTE2017_002 - PDF; arXiv:1706.00222 - PDF; External link: Open Access fulltext
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5.
Pixelized M-pi-n CdTe detector coupled to Medipix2 readout chip / Kalliopuska, J (VTT Electronics, Espoo) ; Tlustos, L (CERN) ; Penttila, R (VTT, Lappeenranta) ; Andersson, H (Oxford Instrum. Analytical Oy) ; Nenonen, S (Oxford Instrum. Analytical Oy) ; Gadda, A (VTT Electronics, Espoo) ; Pohjonen, H (VTT Electronics, Espoo) ; Vanttajac, I (VTT, Lappeenranta) ; Laaksoc, P (VTT, Lappeenranta) ; Likonen, J (VTT Electronics, Espoo)
We have realized a simple method for patterning an M-pi-n CdTe diode with a deeply diffused pn-junction, such as indium anode on CdTe. The method relies on removing the semiconductor material on the anode-side of the diode until the physical junction has been reached. [...]
2011 - Published in : JINST 6 (2011) C01100 IOP Open Access article: PDF;
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