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1.
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2023 Compendium of Radiation-Induced Effects for Candidate Particle Accelerator
/ Ferraro, Rudy (CERN) ; Gkountoumis, Panagiotis (CERN) ; Foucard, Gilles (CERN) ; Ventura, Antonio (CERN) ; Scialdone, Antonio (CERN ; Montpellier U.) ; Zimmaro, Alessandro (CERN ; Montpellier U.) ; Glecer, Bruno (CERN) ; Koseoglou, Sokratis (CERN) ; Botias, Cai Arcos (CERN) ; Masi, Alessandro (CERN) et al.
The sensitivity of a variety of components for particle accelerator electronics has been analyzed against Single Event Effects, Total Ionizing Dose and Displacement Damage. The tested parts include analog, linear, digital, and mixed devices..
2023 - 8 p.
- Published in : 10.1109/REDW61050.2023.10265814
In : 2023 IEEE Radiation Effects Data Workshop (REDW 2023): (in conjunction with 2023 NSREC), Kansas City, Missouri, United States, 24 - 28 Jul 2023
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2.
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SEE Testing on commercial power MOSFETs
/ Fernández-Martínez, Pablo (CERN) ; Papadopoulou, Athina (CERN) ; Danzeca, Salvatore (CERN) ; Foucard, Gilles (CERN) ; Alía, Rubén García (CERN) ; Kastriotou, Maria (CERN ; Rutherford) ; Cazzaniga, Carlo (Rutherford) ; Tsiligiannis, Giorgos (CERN) ; Gaillard, Remi (Unlisted, FR)
This work compiles the outcome of several irradiation test campaigns, carried out with the aim of studying the susceptibility to hard Single Event Effects (SEE) of various commercial power MOSFET references. Proton, neutron and heavy ion irradiation were performed on the same set of MOSFET references, allowing for a comparison of their respective Single Event Burnout (SEB) and Single Event Gate Rupture (SEGR) sensitiveness under different energy and particle irradiation conditions..
2020 - 8 p.
- Published in : 10.1109/RADECS50773.2020.9857706
In : 20th European Conference on Radiation and its Effects on Components and Systems (RADECS 2020), Online, France, 19 - 23 Jun 2020
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3.
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COTS Optocoupler Radiation Qualification Process for LHC Applications Based on Mixed-Field Irradiations
/ Ferraro, Rudy (CERN) ; Foucard, Gilles (CERN) ; Infantino, Angelo (CERN) ; Dilillo, Luigi (LIRMM, Montpellier) ; Brugger, Markus (CERN) ; Masi, Alessandro (CERN) ; García Alía, Rubén (CERN) ; Danzeca, Salvatore (CERN)
Optoelectronic components are the most sensitive devices of systems exposed to radiation environments. Displacement damage (DD) effects can severely degrade the performances of such devices, which are extensively used in critical electronic systems installed in particle accelerators or nuclear power plants. [...]
2020 - 9 p.
- Published in : IEEE Trans. Nucl. Sci. 67 (2020) 1395-1403
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4.
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2018 Compendium of Radiation-Induced Effects for Candidate Particle Accelerator Electronics
/ Danzeca, Salvatore (CERN) ; Foucard, G (CERN) ; Tsiligiannis, G (CERN) ; Ferraro, R (CERN ; Montpellier U.) ; Piscopo, G (CERN) ; McAllister, C G (CERN) ; Borel, T (CERN) ; Peronnard, P (CERN) ; Brugger, M (CERN) ; Masi, A (CERN) et al.
The sensitivity of a variety of components for particle accelerators electronics has been analyzed against Single Event Effects, Total Ionizing Dose and Displacement Damage. The tested parts include analog, linear, digital and mixed devices..
2018 - 6 p.
- Published in : 10.1109/NSREC.2018.8584266
In : 2018 IEEE Radiation Effects Data Workshop, Waikoloa Village, HI, USA, 16 - 20 Jul 2018, pp.8584266
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5.
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Compendium of Radiation-Induced Effects for Candidate Particle Accelerator Electronics
/ Danzeca, S (CERN) ; Peronnard, P (CERN) ; Foucard, G (CERN) ; Tsiligiannis, G (CERN) ; Secondo, R (IES, Montpellier) ; Ferraro, R (IES, Montpellier) ; McAllister, C G (CERN) ; Borel, T (IES, Montpellier) ; Brugger, M (CERN) ; Masi, A (CERN) et al.
Vulnerability of a variety of components for particle accelerators electronics to single event effects, total ionizing dose and displacement damage has been analyzed. The tested parts include analog, linear, digital, and hybrid devices..
2017 - 6 p.
- Published in : 10.1109/NSREC.2017.8115434
In : 2017 IEEE Radiation Effects Data Workshop, New Orleans, LA, USA, 17 - 21 Jul 2017
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6.
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Embedded Detection and Correction of SEU Bursts in SRAM Memories Used as Radiation Detectors
/ Secondo, R. (CERN) ; Foucard, G. (CERN) ; Danzeca, S. (CERN) ; Losito, R. (CERN) ; Peronnard, P. (CERN) ; Masi, A. (CERN) ; Brugger, M. (CERN) ; Dusseau, L. (Montpellier U.)
SRAM memories are widely used as particle fluence detectors in high radiation environments, such as in the Radiation Monitoring System (RadMon) currently in operation in the CERN accelerator complex. Multiple Cell Upsets (MCUs), arising from micro-latchup events, are characterized by a large number of SEUs, ultimately affecting the measurement of particle fluxes and resulting in corrupted data and accuracy losses. [...]
2016
- Published in : IEEE Trans. Nucl. Sci. 63 (2016) 2168-2175
In : Conference on Radiation and its Effects on Components and Systems, Moscow, Russia, 14 - 18 Sep 2015, pp.2168-2175
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7.
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Analysis and Detection of Multiple Cell Upsets in SRAM Memories Used as Particle Detectors
/ Secondo, R (CERN ; CEM2, Montpellier) ; Foucard, G (CERN) ; Danzeca, S (CERN) ; Losito, R (CERN) ; Peronnard, P (CERN) ; Masi, A (CERN) ; Brugger, M (CERN) ; Dusseau, L (CEM2, Montpellier)
SRAM memories are widely used as particle detectors in high radiation environments, as in the CERN accelerator complex. Multiple Cell Upsets (MCUs) characterized by a large number of SEUs may affect the measurement of particle fluxes, resulting in corrupted data and accuracy losses. [...]
2015 - 4 p.
- Published in : 10.1109/RADECS.2015.7365582
In : Conference on Radiation and its Effects on Components and Systems, Moscow, Russia, 14 - 18 Sep 2015, pp.7365582
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8.
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Effectiveness Analysis of a Non-Destructive Single Event Burnout Test Methodology
/ Oser, P (CERN ; Hochschule, Eng. Econ., Karlsruhe) ; Mekki, J (CERN) ; Spiezia, G (CERN) ; Fadakis, E (CERN) ; Foucard, G (CERN) ; Peronnard, P (CERN) ; Masi, A (CERN) ; Gaillard, R
It is essential to characterize power MosFETs regarding their tolerance to destructive Single Event Burnouts (SEB). Therefore, several non-destructive test methods have been developed to evaluate the SEB cross-section of power devices. [...]
2014 - 9 p.
- Published in : IEEE Trans. Nucl. Sci. 61 (2014) 1865-1873
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9.
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Qualification and Characterization of SRAM Memories Used as Radiation Sensors in the LHC
/ Danzeca, S (CERN) ; Spiezia, G (CERN) ; Brugger, M (CERN) ; Dusseau, L (CEM2, Montpellier) ; Foucard, G (CERN) ; Garcia Alia, R (CERN) ; Mala, P (PSI, Villigen) ; Masi, A (CERN) ; Peronnard, P (CERN) ; Soltes, J (Rez, Nucl. Phys. Inst.) et al.
An 8 Mbit 90-nm memory is proposed as a new high energy hadron fluence sensor. The obtained cross sections for protons (30 MeV up to 480 MeV) and thermal neutrons as well as their dependency on the TID together with the control circuitry is presented. [...]
2014 - 8 p.
- Published in : IEEE Trans. Nucl. Sci. 61 (2014) 3458-3465
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