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Fab-to-fab and run-to-run variability in 130 nm and 65 nm CMOS technologies exposed to ultra-high TID
/ Termo, G (CERN ; Ecole Polytechnique, Lausanne) ; Borghello, G (CERN) ; Faccio, F (CERN) ; Michelis, S (CERN) ; Koukab, A (Ecole Polytechnique, Lausanne) ; Sallese, J M (Ecole Polytechnique, Lausanne)
The discovery of a large fab-to-fab variability in the TID response of the CMOS technologies used in the design of ASICs for the particle detectors of the HL-LHC triggered a monitoring effort to verify the consistency of the CMOS production process over time. As of 2014, 22 chips from 3 different fabs in 130 nm CMOS technology and 11 chips from 2 different fabs in 65 nm CMOS technology have been irradiated to ultra-high doses, ranging from 100 Mrad(SiO2) to 1 Grad(SiO2). [...]
2023 - 9 p.
- Published in : JINST
In : Topical Workshop on Electronics for Particle Physics 2022 (TWEPP 2022), Bergen, Norway, 19 - 23 Sep 2022, pp.C01061
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Special NSREC 2022 Issue of the IEEE Transactions on Nuclear Science : Editor Comments
/ Fleetwood, Dan (Vanderbilt U.) ; Brown, Dennis ; Quinn, Heather (Los Alamos) ; Robinson, William (Georgia Tech) ; Moss, Steven ; Goiffon, Vincent ; Paillet, Philippe ; Ding, Lili ; Loveless, Daniel (U. Tennessee, Chattanooga) ; Black, Jeffrey (Sandia) et al.
The April 2023 Special Issue of the IEEE Transactions on Nuclear Science (TNS) contains selected papers from the 59th annual IEEE International Nuclear and Space Radiation Effects Conference (NSREC), which after two years of virtual conferences, was held in person from July 18 through July 22, 2022, in Provo, UT, USA. The 2022 IEEE NSREC was sponsored by the IEEE Nuclear and Plasma Sciences Society. [...]
2023 - 1 p.
- Published in : IEEE Trans. Nucl. Sci. 70 (2023) 300
In : 2022 IEEE Nuclear and Space Radiation Effects Conference, Provo, Utah, USA, 18 - 23 Jul 2022, pp.300
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Characteristics and ultra-high total ionizing dose response of 22 nm fully depleted silicon-on-insulator
/ Termo, Gennaro (CERN ; LPHE, Lausanne) ; Borghello, Giulio (CERN) ; Faccio, Federico (CERN) ; Kloukinas, Kostas (CERN) ; Caselle, Michele (KIT, Karlsruhe) ; Elsenhans, Alexander Friedrich (KIT, Karlsruhe) ; Ulusoy, Ahmet Cagri (KIT, Karlsruhe) ; Koukab, Adil (LPHE, Lausanne) ; Sallese, Jean-Michel (LPHE, Lausanne)
The radiation response of MOS transistors in a 22 nm Fully Depleted Silicon-On-Insulator (FDSOI) technology exposed to ultra-high total ionizing dose (TID) was investigated. Custom structures including n- and p-channel devices with different sizes and threshold voltage flavours were irradiated with X-rays up to a TID of 100 Mrad(SiO2) with different back-gate bias configurations, from -8 V to 2 V. [...]
2024 - 7 p.
- Published in : JINST 19 (2024) C03039
Fulltext: PDF;
In : Topical Workshop on Electronics for Particle Physics 2023 (TWEPP 2023), Geremeas, Sardinia, Italy, 1 - 6 Oct 2023, pp.C03039
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Radiation response of 28 nm CMOS transistors at high proton and neutron fluences for high energy physics applications
/ Termo, G (CERN ; LPHE, Lausanne) ; Borghello, G (CERN) ; Faccio, F (CERN) ; Michelis, S (CERN) ; Koukab, A (LPHE, Lausanne) ; Sallese, J M (LPHE, Lausanne)
The 28 nm CMOS technology was selected as a promising candidate to upgrade electronics of particle detectors at CERN. Despite the robustness of this node to ultra-high levels of total ionizing dose has been proven, the resilience to 10161MeVneq/cm2 fluences is still unknown. [...]
2024 - 7 p.
- Published in : Nucl. Instrum. Methods Phys. Res., A 1065 (2024) 169497
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Radiation-Induced Charge Trapping in Shallow Trench Isolations of FinFETs
/ Bonaldo, Stefano (Padua U. ; INFN, Padua) ; Wallace, Trace (Arizona State U., Tempe) ; Barnaby, Hugh (Arizona State U., Tempe) ; Borghello, Giulio (CERN) ; Termo, Gennaro (CERN ; Ecole Polytechnique, Lausanne) ; Faccio, Federico (CERN) ; Fleetwood, Daniel M (Vanderbilt U.) ; Mattiazzo, Serena (Padua U. ; INFN, Padua) ; Bagatin, Marta (Padua U. ; INFN, Padua) ; Paccagnella, Alessandro (Padua U. ; INFN, Padua) et al.
We provide comprehensive experimental data and technology computer-aided design (TCAD) simulations to clarify total-ionizing-dose mechanisms in 16-nm Si FinFETs. In n-channel FinFETs irradiated to ultrahigh doses, the transconductance evolution rebounds (increase up to 3–10 Mrad followed by a decrease), while the drain-to-source leakage current steadily augments until reaching a plateau at very large doses. [...]
2024 - 10 p.
- Published in : IEEE Trans. Nucl. Sci. 71 (2024) 427-436
Fulltext: PDF;
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Special NSREC 2023 Issue of the IEEE Transactions on Nuclear Science Editor Comments
/ Fleetwood, Dan (Vanderbilt U.) ; Quinn, Heather ; Moss, Steven (Aerospace Corp.) ; Goiffon, Vincent ; Paillet, Philippe ; Ding, Lili ; Loveless, Daniel (Indiana U.) ; Black, Jeffrey (Sandia) ; Faccio, Federico (CERN) ; Barth, Janet (NASA, JFK)
The April 2024 Special Issue of the IEEE Transactions on Nuclear Science (TNS) contains selected papers from the 60th annual IEEE International Nuclear and Space Radiation Effects Conference (NSREC), which was held in Kansas City, MO, USA, from July 24 to 28, 2023. The IEEE NSREC is sponsored by the IEEE Nuclear and Plasma Sciences Society. [...]
2024 - 1 p.
- Published in : IEEE Trans. Nucl. Sci. 71 (2024) 367
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Comments by the Editors
/ Fleetwood, Dan (Vanderbilt U.) ; Quinn, Heather (Los Alamos) ; Robinson, William (Georgia Tech., Atlanta) ; Moss, Steven (Aerospace Corp.) ; Goiffon, Vincent ; Paillet, Philippe (CEA DAM) ; Ding, Lili ; Loveless, Daniel (U. Tennessee, Chattanooga) ; Black, Jeffrey (Sandia) ; Faccio, Federico (CERN) et al.
The August 2023 Special Issue of IEEE Transactions on Nuclear Science (TNS) contains approximately 70 peer-reviewed journal articles prepared on the basis of presentations made at the 2022 Conference on Radiation and Its Effects on Components and Systems (RADECS) held in Venice, Italy, October 3–7, 2022. Additional papers presented at RADECS 2022 are available in the conference proceedings, available through IEEE Xplore..
2023 - 1 p.
- Published in : IEEE Trans. Nucl. Sci. 70 (2023) 1529
In : European Conference on Radiation and its Effects on Components and Systems, Venice, Italy, 3 - 7 Oct 2022, pp.1529
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