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Radiation-Induced Charge Trapping in Shallow Trench Isolations of FinFETs / Bonaldo, Stefano (Padua U. ; INFN, Padua) ; Wallace, Trace (Arizona State U., Tempe) ; Barnaby, Hugh (Arizona State U., Tempe) ; Borghello, Giulio (CERN) ; Termo, Gennaro (CERN ; Ecole Polytechnique, Lausanne) ; Faccio, Federico (CERN) ; Fleetwood, Daniel M (Vanderbilt U.) ; Mattiazzo, Serena (Padua U. ; INFN, Padua) ; Bagatin, Marta (Padua U. ; INFN, Padua) ; Paccagnella, Alessandro (Padua U. ; INFN, Padua) et al.
We provide comprehensive experimental data and technology computer-aided design (TCAD) simulations to clarify total-ionizing-dose mechanisms in 16-nm Si FinFETs. In n-channel FinFETs irradiated to ultrahigh doses, the transconductance evolution rebounds (increase up to 3–10 Mrad followed by a decrease), while the drain-to-source leakage current steadily augments until reaching a plateau at very large doses. [...]
2024 - 10 p. - Published in : IEEE Trans. Nucl. Sci. 71 (2024) 427-436 Fulltext: PDF;

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Thermal Neutron-Induced SEUs in the LHC Accelerator Environment / Cecchetto, Matteo (CERN) ; García Alía, Rubén (CERN) ; Wrobel, Frédéric (IES, Montpellier) ; Tali, Maris (CERN) ; Stein, Oliver (CERN) ; Lerner, Giuseppe (CERN) ; Biłko, Kacper (CERN) ; Esposito, Luigi (CERN) ; Bahamonde Castro, Cristina (CERN) ; Kadi, Yacine (CERN) et al.
In addition to high-energy hadrons, which include neutrons, protons, and pions above 20 MeV, thermal neutrons (ThNs) are a major concern in terms of soft error rate (SER) for electronics operating in the large hadron collider (LHC) accelerator at the European Organization for Nuclear Research (CERN). Most of the electronic devices still contain Boron-10 inside their structure, which makes them sensitive to ThNs. [...]
2020 - 9 p. - Published in : IEEE Trans. Nucl. Sci. 67 (2020) 1412-1420 Fulltext from publisher: PDF;

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Development of a large pixel chip demonstrator in RD53 for ATLAS and CMS upgrades / Conti, Elia (CERN) ; Barbero, Marlon (Marseille, CPPM) ; Fougeron, Denis (Marseille, CPPM) ; Godiot, Stephanie (Marseille, CPPM) ; Menouni, Mohsine (Marseille, CPPM) ; Pangaud, Patrick (Marseille, CPPM) ; Rozanov, Alexandre (Marseille, CPPM) ; Breugnon, Patrick (Marseille, CPPM) ; Bomben, Marco (Paris U., VI-VII) ; Calderini, Giovanni (Paris U., VI-VII) et al. /RD53
RD53A is a large scale 65 nm CMOS pixel demonstrator chip that has been developed by the RD53 collaboration for very high rate (3 GHz/cm$^2$) and very high radiation levels (500 Mrad, possibly 1 Grad) for ATLAS and CMS phase 2 upgrades. It features serial powering operation and design variations in the analog and digital pixel matrix for different testing purposes. [...]
SISSA, 2017 - 5 p. - Published in : PoS TWEPP-17 (2017) 005 Fulltext: PDF; External link: PoS server
In : Topical Workshop on Electronics for Particle Physics, Santa Cruz, Ca, United States Of America, 11 - 15 Sep 2017, pp.005

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Radiation tolerance study of a commercial 65 nm CMOS technology for high energy physics applications / Ding, Lili (Padua U. ; INFN, Padua ; Northwest Inst. Nucl. Tech., Xian) ; Gerardin, Simone (Padua U. ; INFN, Padua) ; Bagatin, Marta (Padua U.) ; Bisello, Dario (Padua U. ; INFN, Padua) ; Mattiazzo, Serena (Padua U.) ; Paccagnella, Alessandro (Padua U. ; INFN, Padua)
This paper reports the radiation tolerance study of a commercial 65 nm technology, which is a strong candidate for the Large Hadron Collider applications. After exposure to 3 MeV protons till 1 Grad dose, the 65 nm CMOS transistors, especially the pMOSFETs, showed severe long-term degradation mainly in the saturation drain currents. [...]
2016 - 4 p. - Published in : Nucl. Instrum. Methods Phys. Res., A 831 (2016) 265-268
In : 10th International "Hiroshima" Symposium on the Development and Application of Semiconductor Tracking Detectors, Xi'an, China, 25 - 29 Sep 2015, pp.265-268

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Radiation Vulnerability in 65 nm CMOS I/O Transistors after Exposure to Grad Dose / Ding, Lili (U. Padua (main)) ; Gerardin, Simone (U. Padua (main)) ; Bagatin, Marta (U. Padua (main)) ; Mattiazzo, Serena (U. Padua (main)) ; Bisello, Dario (INFN, Padua) ; Paccagnella, Alessandro (U. Padua (main))
We studied the TID response of I/O 65 nm MOSFETs, which are strong candidates for LHC upgrade. Enhanced radiation vulnerability in I/O transistors appeared, due to radiation-induced interface states and charge accumulation..
2015 - 5 p. IEEE Nucl.Sci.Symp.Conf.Rec. - Published in : 10.1109/RADECS.2015.7365655
In : Conference on Radiation and its Effects on Components and Systems, Moscow, Russia, 14 - 18 Sep 2015, pp.7365655

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Impact of NBTI Aging on the Single-Event Upset of SRAM Cells / Bagatin, M (Univ Padua, RREACT Grp, Dipartimento Ingn Informaz, I-35131 Padua, Italy.) ; Faccio, Federico (CERN) ; Gerardin, Simone (Univ Padua, RREACT Grp, Dipartimento Ingn Informaz, I-35131 Padua, Italy. ; Ist Nazl Fis Nucl, I-35131 Padua, Italy.) ; Paccagnella, Alessandro (Univ Padua, RREACT Grp, Dipartimento Ingn Informaz, I-35131 Padua, Italy. ; Ist Nazl Fis Nucl, I-35131 Padua, Italy.) ; Bagatin, Marta (Univ Padua, RREACT Grp, Dipartimento Ingn Informaz, I-35131 Padua, Italy. ; Ist Nazl Fis Nucl, I-35131 Padua, Italy.)
We analyzed the impact of negative bias temperature instability (NBTI) on the single-event upset rate of SRAM cells through experiments and SPICE simulations. We performed critical charge simulations introducing different degradation patterns in the cells, in three technology nodes, from 180 to 90 nm. [...]
2010 - Published in : IEEE Trans. Nucl. Sci. 57 (2010) 3245-3250 IEEE Published version, local copy: PDF;

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