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Analysis of the radiation hardness and charge collection efficiency of thinned silicon diodes / Boscardin, M (ITC-IRST, Trento) ; Bruzzi, M (INFN, Florence ; Florence U.) ; Candelori, A (INFN, Padua) ; Dalla Betta, G -F (U. Trento (main)) ; Focardi, E (INFN, Florence ; Florence U.) ; Khomenkov, V (INFN, Padua) ; Piemonte, C (ITC-IRST, Trento) ; Ronchin, S (ITC-IRST, Trento) ; Tosi, C (U. Florence (main)) ; Zorzi, N (ITC-IRST, Trento)
Due to their low depletion voltage, even after high particle fluences, improved tracking precision and momentum resolution and reduced material budget, thin substrates are one of the possible choices to provide radiation hard detectors for future high energy physics experiments. In the framework of the CERN RD50 Collaboration, we have developed p-n diode detectors on membranes obtained by locally thinning the silicon substrate by means of TMAH etching from the wafer back-side. [...]
2004 - 4 p. - Published in : 10.1109/NSSMIC.2004.1462353
In : 51st Nuclear Science Symposium and Medical Imaging Conference, Rome, Italy, 16 - 22 Oct 2004

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Development of radiation hard silicon detectors: the SMART project / Messineo, A (INFN sez. di Pisa and Università di Pisa, Italy) ; Borrello, L (INFN sez. di Pisa and Università di Pisa, Italy) ; Segneri, G (INFN sez. di Pisa and Università di Pisa, Italy) ; Sentenac, D (INFN sez. di Pisa and Università di Pisa, Italy) ; Creanza, D (INFN sez. di Bari and Università di Bari, Italy) ; Depalma, M (INFN sez. di Bari and Università di Bari, Italy) ; Manna, N (INFN sez. di Bari and Università di Bari, Italy) ; Radicci, V (INFN sez. di Bari and Università di Bari, Italy) ; Borchi, E (INFN sez. di Firenze and Università di Firenze, Italy) ; Bruzzi, M (INFN sez. di Firenze and Università di Firenze, Italy) et al.
2006
In : 9th ICATPP Conference on Astroparticle, Particle, Space Physics, Detectors and Medical Physics Applications, Como, Italy, 17 - 21 Oct 2005, pp.843-849

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Radiation hardness and charge collection efficiency of lithium irradiated thin silicon diodes / Boscardin, Maurizio ; Betta, G F D ; Bruzzi, Mara ; Candelori, Andrea ; Focardi, Ettore ; Khomenkov, Volodymyr P ; Piemonte, Claudio ; Ronchin, S ; Tosi, C ; Zorzi, N
Due to their low depletion voltage, even after high particle fluences, improved tracking precision and momentum resolution, and reduced material budget, thin substrates are one of the possible choices to provide radiation hard detectors for future high energy physics experiments. In the framework of the CERN RD50 Collaboration, we have developed PIN diode detectors on membranes obtained by locally thinning the silicon substrate by means of TMAH etching from the wafer backside. [...]
2005 - Published in : IEEE Trans. Nucl. Sci. 52 (2005) 1048-1053

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