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1.
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Evaluation of 3D sensors for fast timing applications
/ Diehl, Leena (CERN) ; Argyropoulos, Spyros (Freiburg U.) ; Ferrer, Oscar (Barcelona, Inst. Microelectron.) ; Hauser, Marc (Freiburg U.) ; Jakobs, Karl (Freiburg U.) ; King, Montague (Freiburg U. ; CERN) ; Lex, Fabian (Freiburg U.) ; Kramberger, Gregor (Stefan Inst., Ljubljana) ; Parzefall, Ulrich (Freiburg U.) ; Pellegrini, Giulio (Barcelona, Inst. Microelectron.) et al.
Novel collider experiments demand an increased performance of the silicon detectors used, such as withstanding up to 1×1017neq/cm2 in unprecedented pile-up conditions and providing time resolution around 10ps. Currently, Low Gain Avalanche Diodes (LGADs) are the standard, achieving resolutions below 30ps. [...]
2024 - 6 p.
- Published in : Nucl. Instrum. Methods Phys. Res., A 1065 (2024) 169517
In : 13th International "Hiroshima" Symposium on the Development and Application of Semiconductor Tracking Detectors, Vancouver, Canada, 3 - 8 Dec 2023, pp.169517
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2.
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3.
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Ultrathin four-quadrant silicon photodiodes for beam position and monitor applications: Characterization and radiation effects
/ Rafí, J M (Barcelona, Inst. Microelectron.) ; Quirion, D (Barcelona, Inst. Microelectron.) ; Duch, M (Barcelona, Inst. Microelectron.) ; Paz, I Lopez (Barcelona, Inst. Microelectron.) ; Dauderys, V (Barcelona, Inst. Microelectron.) ; Claus, T (Barcelona, Inst. Microelectron.) ; Moffat, N (Barcelona, Inst. Microelectron.) ; Molas, B (CELLS - ALBA, LLS) ; Tsunoda, I (Kumamoto Nat. Coll. Tech.) ; Yoneoka, M (Kumamoto Nat. Coll. Tech.) et al.
Ultrathin semiconductor photodiodes are of interest for beam position and monitoring in X-ray synchrotron beamlines and particle therapy medical applications. In this work, single and four-quadrant diodes have been fabricated on ultrathin Si films with thicknesses of 10 μm, 5 μm and 3 μm from silicon on insulator (SOI) substrates. [...]
2023 - 8 p.
- Published in : Solid State Electron. 209 (2023) 108756
Fulltext: PDF;
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4.
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Detector R&D Collaboration for Solid-State detectors
/ Garutti, E et al.
Approved: 06 December 2023.-
Status: Preparation
Experiment: DRD3
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5.
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Low-Temperature Annealing of Electron, Neutron, and Proton Irradiation Effects on SiC Radiation Detectors
/ Rafí, Joan Marc (Barcelona, Inst. Microelectron.) ; Pellegrini, Giulio (Barcelona, Inst. Microelectron.) ; Godignon, Philippe (Barcelona, Inst. Microelectron.) ; Rius, Gemma (Barcelona, Inst. Microelectron.) ; Dauderys, Vainius (Barcelona, Inst. Microelectron.) ; Tsunoda, Isao (Kumamoto Nat. Coll. Tech.) ; Yoneoka, Masashi (Kumamoto Nat. Coll. Tech.) ; Takakura, Kenichiro (Kumamoto Nat. Coll. Tech.) ; Kramberger, Gregor (Stefan Inst., Ljubljana) ; Moll, Michael (CERN)
Silicon carbide (SiC) is a wide bandgap semiconductor with outstanding properties that make it especially appropriate for radiation monitoring in radiation harsh environments and for elevated temperature operation. In this work, radiation effects in electron-, neutron-, and proton-irradiated 4H-SiC p-n junction diodes are investigated by means of electrical characterization, including current–voltage characteristics measured at different temperatures ranging from −50 °C to +200°C. [...]
2023 - 12 p.
- Published in : IEEE Trans. Nucl. Sci. 70 (2023) 2285-2296
External link: accepted manuscript
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6.
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Timing performance and gain degradation after irradiation with protons and neutrons of Low Gain Avalanche Diodes based on a shallow and broad multiplication layer in a float-zone 35μm and 50μm thick silicon substrate
/ Currás, E (CERN) ; Doblas, A (Barcelona, Inst. Microelectron.) ; Fernández, M (CERN ; Cantabria Inst. of Phys.) ; Flores, D (Barcelona, Inst. Microelectron.) ; González, J (Cantabria Inst. of Phys.) ; Hidalgo, S (Barcelona, Inst. Microelectron.) ; Jaramillo, R (Cantabria Inst. of Phys.) ; Moll, M (CERN) ; Navarrete, E (Cantabria Inst. of Phys.) ; Pellegrini, G (Barcelona, Inst. Microelectron.) et al.
The high-luminosity upgrade of the ATLAS and CMS experiments includes dedicated sub-detectors to perform
the time-stamping of minimum ionizing particles (MIPs). These detectors will be exposed up to fluences in the
range of 1.5–2.5 × 1015 𝑛𝑒𝑞∕cm2 and require a time resolution per detecting layer of 30 ps, for non-irradiated
sensors, to 50–70 ps (depending on the exposed fluences) for sensors at the end of their lifetime. [...]
2023 - 12 p.
- Published in : Nucl. Instrum. Methods Phys. Res., A 1055 (2023) 168522
Publication: PDF;
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7.
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Overview of CNM LGAD results: boron Si-on-Si and epitaxial wafers
/ Grieco, Chiara (Barcelona, IFAE) ; Castillo García, Lucía (Barcelona, IFAE) ; Moreno, Albert Doblas (Barcelona, Inst. Microelectron.) ; Gkougkousis, Evangelos Leonidas (CERN) ; Grinstein, Sebastian (Barcelona, IFAE ; ICREA, Barcelona ; Barcelona, Autonoma U.) ; Hidalgo, Salvador (Barcelona, Inst. Microelectron.) ; Moffat, Neil (Barcelona, Inst. Microelectron.) ; Pellegrini, Giulio (Barcelona, Inst. Microelectron.) ; Villegas Dominguez, Jairo (Barcelona, Inst. Microelectron.)
Low Gain Avalanche Detectors (LGADs) are n-on-p silicon sensors with an extra p-layer below the collection electrode which provides signal amplification. When the primary electrons reach the amplification region new electron-hole pairs are created that enhance the generated signal. [...]
arXiv:2209.11552.-
2022-09-20 - 9 p.
- Published in : JINST
Fulltext: PDF;
In : 12th International Conference on Positional Sensitive Detectors, Online, Online, 12 - 17 Sep 2021, pp.C09021
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8.
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Tracking the Time: Measurements towards the characterization of a 3D pixel in terms of time resolution and Landau contribution evaluation
/ Fernandez Martínez, P (Barcelona, IFAE) ; Coco, V (CERN) ; Gkougkousis, E -L (CERN) ; Halvorsen Mahlum, M (Oslo U.) ; Petrogiannis, G (Barcelona, IFAE) ; Pellegrini, G (CSIC, Catalunya ; Girona U.) ; Rodríguez Rodríguez, E (Santiago de Compostela U., IGFAE)
The proven potential of 3D geometries at higher than 1016n˙eq/cm2 radiation fluences, in combination with a small cell approach, makes them an excellent choice for a combined precision timing tracker. In this study, the preliminary results on timing resolution of a single 50×50μm2 3D pixel cell are presented through charge collection measurements with discrete electronics in a laboratory setup. [...]
2023 - 2 p.
- Published in : Nucl. Instrum. Methods Phys. Res., A 1047 (2023) 167788
In : 15th Pisa Meeting on Advanced Detectors, La Biodola - Isola D'elba, Italy, 22 - 28 May 2022, pp.167788
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9.
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Performance in beam tests of irradiated Low Gain Avalanche Detectors for the ATLAS High Granularity Timing Detector
/ Agapopoulou, C. (IJCLab, Orsay) ; Alderweireldt, S. (CERN) ; Ali, S. (Taiwan, Inst. Phys.) ; Benchekroun, D. (Hassan U. II, Mohammedia) ; Castillo García, L. (Barcelona, IFAE) ; Chan, Y.H. (Taiwan, Natl. Tsing Hua U.) ; Falou, A. (IJCLab, Orsay) ; Ferreira, A. (CERN) ; Gkougkousis, E.L. (Barcelona, IFAE) ; Grieco, C. (Barcelona, IFAE) et al.
The High Granularity Timing Detector (HGTD) will be installed in the ATLAS experiment to mitigate pile-up effects during the High Luminosity (HL) phase of the Large Hadron Collider (LHC) at CERN. Low Gain Avalanche Detectors (LGADs) will provide high-precision measurements of the time of arrival of particles at the HGTD, improving the particle-vertex assignment. [...]
2022-09-21 - 30 p.
- Published in : JINST 17 (2022) P09026
Fulltext: PDF;
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10.
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Study of Ionization Charge Density-Induced Gain Suppression in LGADs
/ Jiménez-Ramos, M Carmen (CNA, Seville ; Seville U.) ; Garcia López, Javier (CNA, Seville ; Seville U.) ; Garcia Osuna, Adrián (CNA, Seville) ; Vila, Iván (Cantabria Inst. of Phys.) ; Currás, Esteban (CERN) ; Jaramillo, Richard (Cantabria Inst. of Phys.) ; Hidalgo, Salvador (Barcelona, Autonoma U.) ; Pellegrini, Giulio (Barcelona, Autonoma U.)
Gain suppression induced by excess carriers in Low Gain Avalanche Detectors (LGADs) has been investigated using 3 MeV protons in a nuclear microprobe. In order to modify the ionization density inside the detector, Ion Beam Induced Current (IBIC) measurements were performed at different proton beam incidence angles between 0$^{\circ}$ and 85$^{\circ}$ The experimental results have been analyzed as a function of the ionization density projected on the multiplication layer, finding that the increase of ionization density leads to greater gain suppression. [...]
2022 - 17 p.
- Published in : Sensors 22 (2022) 1080
Fulltext: PDF;
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