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Arsenic in ZnO and GaN: substitutional cation or anion sites?
/ Wahl, Ulrich (ITN, Sacavem ; Lisbon U., CFNUL) ; Correia, Joao Guilherme (ITN, Sacavem ; Lisbon U., CFNUL) ; Rita, Elisabete (Lisbon U., CFNUL) ; Marques, Ana Claudia (Lisbon U., CFNUL ; CERN) ; Alves, Eduardo (ITN, Sacavem ; Lisbon U., CFNUL) ; Carvalho Soares, José (Lisbon U., CFNUL)
/EC-SLI Collaboration
We have determined the lattice location of ion implanted As in ZnO and GaN by means of conversion electron emission channeling from radioactive $^{73}$As. In contrast to what one might expect from its nature as a group V element, we find that As does not occupy substitutional O sites in ZnO but in its large majority substitutional Zn sites. [...]
CERN-OPEN-2014-008.-
Sacavém, Portugal : ITN, 2007 - 12 p.
- Published in : Mater. Res. Soc. Symp. Proc.: 994 (2007) , pp. 0994-F01-03
Preprint: PDF;
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Amphoteric arsenic in GaN
/ Wahl, U (ITN, Sacavem ; Lisbon U., CFNUL) ; Correia, J G (ITN, Sacavem ; Lisbon U., CFNUL ; CERN) ; Araújo, J P (Porto U.) ; Rita, E (Lisbon U., CFNUL) ; Soares, JC (Lisbon U., CFNUL)
/EC-SLI Collaboration ; ISOLDE Collaboration
We have determined the lattice location of implanted arsenic in GaN by means of conversion electron emission channeling from radioactive $^{73}$As. We give direct evidence that As is an amphoteric impurity, thus settling the long-standing question as to whether it prefers cation or anion sites in GaN. [...]
CERN-OPEN-2013-002.-
Sacavém : Instituto Tecnológico e Nuclear, 2007 - 3 p.
- Published in : Appl. Phys. Lett. 90 (2007) 181934
Fulltext: PDF;
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4.
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Lattice location of implanted As in ZnO
/ Wahl, U (ITN, Sacavem ; Lisbon U.) ; Rita, E (ITN, Sacavem ; Lisbon U.) ; Correia, J G (ITN, Sacavem ; Lisbon U.) ; Marques, A C (Lisbon U. ; CERN) ; Alves, E (ITN, Sacavem ; Lisbon U.) ; Soares, J C
Radioactive 73As ions were implanted into a ZnO single crystal at room temperature with 60 keV up to a fluence of 2×1013 cm−2. Subsequently, the angular emission channeling patterns of emitted conversion electrons were recorded by means of a position-sensitive detector in the as-implanted state and following annealing up to 900 C, and were compared to simulated emission yields for a variety of different lattice sites. [...]
2007
- Published in : Superlattices Microstruct. 42 (2007) 8-13
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Influence of O and C co-implantation on the lattice site of Er in GaN
/ De Vries, Bart ; Matias, V ; Vantomme, A ; Wahl, Ulrich ; Rita, E M C ; Alves, E ; Lima-Lopes, Armandina Maria ; Correia, J G
/ISOLDE Collaboration
The lattice location of low-dose implanted Er in GaN, GaN:O, and GaN:C was investigated using the emission channeling technique. The conversion electrons emitted by the probe isotope $^{167m}$Er give direct evidence that the majority (~90%) of Er atoms are located on substitutional Ga sites for all samples. [...]
CERN-OPEN-2006-046.-
Geneva : CERN, 2004 - 3 p.
- Published in : Appl. Phys. Lett. 84 (2004) 4304-4306
Access to fulltext document: PDF;
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