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Impact of Neutron Irradiation on LGADs with a Carbon-Enriched Shallow Multiplication Layer: Degradation of Timing Performance and Gain
/ Ramos, E. Navarrete (Cantabria Inst. of Phys.) ; Duarte-Campderros, J. (Cantabria Inst. of Phys.) ; Fernández, M. (Cantabria Inst. of Phys.) ; Gómez, G. (Cantabria Inst. of Phys.) ; González, J. (Cantabria Inst. of Phys.) ; Hidalgo, S. (Barcelona, Inst. Microelectron.) ; Jaramillo, R. (Cantabria Inst. of Phys.) ; Martínez Ruiz del Arbol, P. (Cantabria Inst. of Phys.) ; Moll, M. (CERN) ; Quintana, C. (Cantabria Inst. of Phys.) et al.
In this radiation tolerance study, Low Gain Avalanche Detectors (LGADs) with a carbon-enriched broad and shallow multiplication layer were examined in comparison to identical non-carbonated LGADs. [...]
arXiv:2406.01267.
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23 p.
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Ultrathin four-quadrant silicon photodiodes for beam position and monitor applications: Characterization and radiation effects
/ Rafí, J M (Barcelona, Inst. Microelectron.) ; Quirion, D (Barcelona, Inst. Microelectron.) ; Duch, M (Barcelona, Inst. Microelectron.) ; Paz, I Lopez (Barcelona, Inst. Microelectron.) ; Dauderys, V (Barcelona, Inst. Microelectron.) ; Claus, T (Barcelona, Inst. Microelectron.) ; Moffat, N (Barcelona, Inst. Microelectron.) ; Molas, B (CELLS - ALBA, LLS) ; Tsunoda, I (Kumamoto Nat. Coll. Tech.) ; Yoneoka, M (Kumamoto Nat. Coll. Tech.) et al.
Ultrathin semiconductor photodiodes are of interest for beam position and monitoring in X-ray synchrotron beamlines and particle therapy medical applications. In this work, single and four-quadrant diodes have been fabricated on ultrathin Si films with thicknesses of 10 μm, 5 μm and 3 μm from silicon on insulator (SOI) substrates. [...]
2023 - 8 p.
- Published in : Solid State Electron. 209 (2023) 108756
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Low-Temperature Annealing of Electron, Neutron, and Proton Irradiation Effects on SiC Radiation Detectors
/ Rafí, Joan Marc (Barcelona, Inst. Microelectron.) ; Pellegrini, Giulio (Barcelona, Inst. Microelectron.) ; Godignon, Philippe (Barcelona, Inst. Microelectron.) ; Rius, Gemma (Barcelona, Inst. Microelectron.) ; Dauderys, Vainius (Barcelona, Inst. Microelectron.) ; Tsunoda, Isao (Kumamoto Nat. Coll. Tech.) ; Yoneoka, Masashi (Kumamoto Nat. Coll. Tech.) ; Takakura, Kenichiro (Kumamoto Nat. Coll. Tech.) ; Kramberger, Gregor (Stefan Inst., Ljubljana) ; Moll, Michael (CERN)
Silicon carbide (SiC) is a wide bandgap semiconductor with outstanding properties that make it especially appropriate for radiation monitoring in radiation harsh environments and for elevated temperature operation. In this work, radiation effects in electron-, neutron-, and proton-irradiated 4H-SiC p-n junction diodes are investigated by means of electrical characterization, including current–voltage characteristics measured at different temperatures ranging from −50 °C to +200°C. [...]
2023 - 12 p.
- Published in : IEEE Trans. Nucl. Sci. 70 (2023) 2285-2296
External link: accepted manuscript
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Investigation of high resistivity p-type FZ silicon diodes after 60Co γ-irradiation
/ Liao, C. (Hamburg U.) ; Fretwurst, E. (Hamburg U.) ; Garutti, E. (Hamburg U.) ; Schwandt, J. (Hamburg U.) ; Pintilie, I. (Bucharest, IFIN-HH) ; Nitescu, A. ; Himmerlich, A. (CERN) ; Moll, M. (CERN) ; Gurimskaya, Y. (CERN) ; Li, Z. (Ludong U., Yantai)
In this work, the effects of $^\text{60}$Co $\gamma$-ray irradiation on high resistivity $p$-type diodes have been investigated. The diodes were exposed to dose values of 0.1, 0.2, 1, and \SI2{\mega Gy}. [...]
arXiv:2306.15336.-
2024-01-13 - 13 p.
- Published in : Nucl. Instrum. Methods Phys. Res., A 1061 (2024) 169103
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Timing performance and gain degradation after irradiation with protons and neutrons of Low Gain Avalanche Diodes based on a shallow and broad multiplication layer in a float-zone 35μm and 50μm thick silicon substrate
/ Currás, E (CERN) ; Doblas, A (Barcelona, Inst. Microelectron.) ; Fernández, M (CERN ; Cantabria Inst. of Phys.) ; Flores, D (Barcelona, Inst. Microelectron.) ; González, J (Cantabria Inst. of Phys.) ; Hidalgo, S (Barcelona, Inst. Microelectron.) ; Jaramillo, R (Cantabria Inst. of Phys.) ; Moll, M (CERN) ; Navarrete, E (Cantabria Inst. of Phys.) ; Pellegrini, G (Barcelona, Inst. Microelectron.) et al.
The high-luminosity upgrade of the ATLAS and CMS experiments includes dedicated sub-detectors to perform
the time-stamping of minimum ionizing particles (MIPs). These detectors will be exposed up to fluences in the
range of 1.5–2.5 × 1015 𝑛𝑒𝑞∕cm2 and require a time resolution per detecting layer of 30 ps, for non-irradiated
sensors, to 50–70 ps (depending on the exposed fluences) for sensors at the end of their lifetime. [...]
2023 - 12 p.
- Published in : Nucl. Instrum. Methods Phys. Res., A 1055 (2023) 168522
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