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CERN Document Server 150 ჩანაწერია ნაპოვნი  1 - 10შემდეგიდასასრული  ჩანაწერთან გადასვლა: ძიებას დასჭირდა 0.58 წამი. 
1.
Annual Report 2023 and Phase-I Closeout / Aglieri Rinella, Gianluca
This report summarises the activities of the CERN strategic R&D programme on technologies for future experiments during the year 2023, and highlights the achievements of the programme during its first phase 2020-2023..
CERN-EP-RDET-2024-001 - 208.

2.
A Compact Front-End Circuit for a Monolithic Sensor in a 65-nm CMOS Imaging Technology / Piro, F (CERN ; Ecole Polytechnique, Lausanne) ; Rinella, G Aglieri (CERN) ; Andronic, A (U. Munster) ; Antonelli, M (INFN, Trieste) ; Aresti, M (Cagliari U. ; INFN, Cagliari) ; Baccomi, R (INFN, Trieste) ; Becht, P (Heidelberg U.) ; Beolè, S (Turin U. ; INFN, Turin) ; Braach, J (CERN) ; Buckland, M D (INFN, Trieste ; Trieste U.) et al.
This article presents the design of a front-end circuit for monolithic active pixel sensors (MAPSs). The circuit operates with a sensor featuring a small, low-capacitance (< 2 fF) collection electrode and is integrated into the DPTS chip, a proof-of-principle prototype of 1.5×1.5 mm including a matrix of 32×32 pixels with a pitch of 15μm . [...]
2023 - 10 p. - Published in : IEEE Trans. Nucl. Sci. 70 (2023) 2191-2200 Fulltext: PDF;
3.
Optimization of a 65 nm CMOS imaging process for monolithic CMOS sensors for high energy physics / Rinella, G Aglieri (CERN) ; Andronic, A (Munster U., ITP) ; Antonelli, M (INFN, Trieste ; Trieste U.) ; Baccomi, R (INFN, Trieste ; Trieste U.) ; Ballabriga, R (CERN) ; Barbero, M (Marseille, CPPM) ; Barrillon, P (Marseille, CPPM) ; Baudot, J (Strasbourg, IPHC) ; Becht, P (Heidelberg U.) ; Benotto, F (INFN, Turin ; Turin U.) et al.
The long term goal of the CERN Experimental Physics Department R&D; on monolithic sensorsis the development of sub-100nm CMOS sensors for high energy physics. The first technologyselected is the TPSCo 65nm CMOS imaging technology. [...]
2023 - 15 p. - Published in : PoS Pixel2022 (2023) 083 Fulltext: PDF;
In : 10th International Workshop on Semiconductor Pixel Detectors for Tracking and Imaging (PIXEL 2022), Santa Fe, USA, 11 - 16 Dec 2022, pp.083
4.
Design and readout architecture of a monolithic binary active pixel sensor in TPSCo 65 nm CMOS imaging technology / Cecconi, L (CERN) ; Piro, F (CERN ; Ecole Polytechnique, Lausanne) ; de Melo, J L A (CERN) ; Deng, W (CERN ; Hua-Zhong Normal U.) ; Hong, G H (CERN ; Yonsei U.) ; Snoeys, W (CERN) ; Mager, M (CERN) ; Suljic, M (CERN) ; Kugathasan, T (CERN) ; Buckland, M (Trieste U. ; INFN, Trieste) et al.
The Digital Pixel Test Structure (DPTS) is a monolithic active pixel sensor prototype chip designed to explore the TPSCo 65 nm ISC process in the framework of the CERN-EP R&D; on monolithic sensors and the ALICE ITS3 upgrade. It features a 32 × 32 binary pixel matrix at 15 μm pitch with event-driven readout, with GHz range time-encoded digital signals including Time-Over-Threshold. [...]
2023 - 9 p. - Published in : JINST 18 (2023) C02025
In : Topical Workshop on Electronics for Particle Physics 2022 (TWEPP 2022), Bergen, Norway, 19 - 23 Sep 2022, pp.C02025
5.
Design of an analog monolithic pixel sensor prototype in TPSCo 65 nm CMOS imaging technology / Deng, W (Hua-Zhong Normal U. ; CERN) ; Aglieri Rinella, G (CERN) ; Aresti, M (Catania U. ; INFN, Catania) ; Baudot, J (Strasbourg, IPHC) ; Benotto, F (INFN, Turin ; Turin U.) ; Beole, S (INFN, Turin ; Turin U.) ; Bialas, W (CERN) ; Borghello, G (CERN) ; Bugiel, S (Strasbourg, IPHC) ; Campbell, M (CERN) et al.
A series of monolithic active pixel sensor prototypes (APTS chips) were manufactured in the TPSCo 65 nm CMOS imaging process in the framework of the CERN-EP R&D; on monolithic sensors and the ALICE ITS3 upgrade project. Each APTS chip contains a 4 × 4 pixel matrix with fast analog outputs buffered to individual pads. [...]
2023 - 9 p. - Published in : JINST 18 (2023) C01065
In : Topical Workshop on Electronics for Particle Physics 2022 (TWEPP 2022), Bergen, Norway, 19 - 23 Sep 2022, pp.C01065
6.
Annual Report 2022 / Aglieri, Gianluca
This report summarises the activities and main achievements of the CERN strategic R&D programme on technologies for future experiments during the year 2022
CERN-EP-RDET-2023-002 - 100.

7.
Extension of the R&D Programme on Technologies for Future Experiments / Joram, Christian
we have conceived an extension of the R&D programme covering the period 2024 to 2028, i.e [...]
CERN-EP-RDET-2023-001 -

8.
Digital Pixel Test Structures implemented in a 65 nm CMOS process / Rinella, Gianluca Aglieri (CERN) ; Andronic, Anton (Munster U.) ; Antonelli, Matias (INFN, Trieste ; Trieste U.) ; Aresti, Mauro (Cagliari U. ; INFN, Cagliari) ; Baccomi, Roberto (INFN, Trieste ; Trieste U.) ; Becht, Pascal (U. Heidelberg (main)) ; Beole, Stefania (Turin U. ; INFN, Turin) ; Braach, Justus (CERN ; Hamburg U.) ; Buckland, Matthew Daniel (INFN, Trieste ; Trieste U.) ; Buschmann, Eric (CERN) et al.
The ALICE ITS3 (Inner Tracking System 3) upgrade project and the CERN EP R&D; on monolithic pixel sensors are investigating the feasibility of the Tower Partners Semiconductor Co. 65 nm process for use in the next generation of vertex detectors. [...]
arXiv:2212.08621.- 2023-08-04 - 13 p. - Published in : Nucl. Instrum. Methods Phys. Res., A 1056 (2023) 168589 Fulltext: 2212.08621 - PDF; Publication - PDF;
9.
Measurement of (anti)nuclei production in p-Pb collisions at $\sqrt{s_{\rm NN}} = 8.16$ TeV / ALICE Collaboration
Measurements of (anti)proton, (anti)deuteron, and (anti)$^3$He production in the rapidity range $-1<y< 0$ as a function of the transverse momentum and event multiplicity in p-Pb collisions at a center-of-mass energy per nucleon-nucleon pair $\sqrt{s_{\rm NN}} = 8.16$ TeV are presented. The coalescence parameters $B_2$ and $B_3$, measured as a function of the transverse momentum per nucleon and of the mean charged-particle multiplicity density, confirm a smooth evolution from low to high multiplicity across different collision systems and energies. [...]
arXiv:2212.04777; CERN-EP-2022-275.- Geneva : CERN, 2023-09-15 - 17 p. - Published in : Phys. Lett. B 846 (2023) 137795 Draft (restricted): PDF; Fulltext: 2212.04777 - PDF; Publication - PDF;
10.
Charge sensing properties of monolithic CMOS pixel sensors fabricated in a 65 nm technology / Bugiel, Szymon (Strasbourg, IPHC) ; Dorokhov, Andrei (Strasbourg, IPHC) ; Aresti, Mauro (INFN, Cagliari) ; Baudot, Jerome (Strasbourg, IPHC) ; Beole, Stefania (INFN, Turin) ; Besson, Auguste (Strasbourg, IPHC) ; Bugiel, Roma (Strasbourg, IPHC) ; Cecconi, Leonardo (CERN) ; Colledani, Claude (Strasbourg, IPHC) ; Deng, Wenjing (CERN ; CCNU, Wuhan, Inst. Part. Phys.) et al.
In this work the initial performance studies of the first small monolithic pixel sensors dedicated to charged particle detection, called CE-65, fabricated in the 65nm TowerJazz Panasonic Semiconductor Company are presented. The tested prototypes comprise matrices of 64 $\times$ 32 square analogue-output pixels with a pitch of 15 $\mu$m. [...]
2022 - 4 p.

In : Vienna Conference on Instrumentation (VCI 2022), Online, Austria, 21 - 25 Feb 2022, pp.167213

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