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Simulating Monolithic Active Pixel Sensors: A Technology-Independent Approach Using Generic Doping Profiles / Wennlöf, Håkan (DESY) ; Dannheim, Dominik (CERN) ; Viera, Manuel Del Rio (DESY ; Bonn U.) ; Dort, Katharina (CERN ; Giessen U.) ; Eckstein, Doris (DESY) ; Feindt, Finn (DESY) ; Gregor, Ingrid-Maria (DESY) ; Huth, Lennart (DESY) ; Lachnit, Stephan (DESY ; Hamburg U.) ; Mendes, Larissa (DESY ; Bonn U.) et al.
The optimisation of the sensitive region of CMOS sensors with complex non-uniform electric fields requires precise simulations, and this can be achieved by a combination of electrostatic field simulations and Monte Carlo methods. [...]
arXiv:2408.00027. - 22.
Fulltext

Simulations and performance studies of a MAPS in 65 nm CMOS imaging technology / Simancas, Adriana (DESY ; Bonn U.) ; Braach, Justus (CERN ; Hamburg U., Dept. Math.) ; Buschmann, Eric (CERN) ; Chauhan, Ankur (DESY) ; Dannheim, Dominik (CERN) ; Viera, Manuel Del Rio (DESY ; Bonn U.) ; Dort, Katharina (CERN ; Giessen U.) ; Eckstein, Doris (DESY) ; Feindt, Finn (DESY) ; Gregor, Ingrid-Maria (DESY) et al.
Monolithic active pixel sensors (MAPS) produced in a 65 nm CMOS imaging technology are being investigated for applications in particle physics. The MAPS design has a small collection electrode characterized by an input capacitance of ~fF, granting a high signal-to-noise ratio and low power consumption. [...]
arXiv:2402.14524.- 2024-05-03 - 5 p. - Published in : Nucl. Instrum. Methods Phys. Res., A 1064 (2024) 169414 Fulltext: 2402.14524 - PDF; Publication - PDF;
In : 13th International "Hiroshima" Symposium on the Development and Application of Semiconductor Tracking Detectors, Vancouver, Canada, 3 - 8 Dec 2023, pp.169414

Towards a new generation of Monolithic Active Pixel Sensors / Chauhan, Ankur (DESY) ; Viera, Manuel Del Rio (DESY ; Bonn U.) ; Eckstein, Doris (DESY) ; Feindt, Finn (DESY) ; Gregor, Ingrid-Maria (DESY) ; Hansen, Karsten (DESY) ; Huth, Lennart (DESY) ; Mendes, Larissa (DESY ; U. Campinas) ; Mulyanto, Budi (DESY) ; Rastorguev, Daniil (DESY ; Wuppertal U.) et al.
A new generation of Monolithic Active Pixel Sensors (MAPS), produced in a 65 nm CMOS imaging process, promises higher densities of on-chip circuits and, for a given pixel size, more sophisticated in-pixel logic compared to larger feature size processes. MAPS are a cost-effective alternative to hybrid pixel sensors since flip-chip bonding is not required. [...]
arXiv:2210.09810.- 2023 - 3 p. - Published in : Nucl. Instrum. Methods Phys. Res., A 1047 (2023) 167821 Fulltext: PDF;
In : 15th Pisa Meeting on Advanced Detectors, La Biodola - Isola D'elba, Italy, 22 - 28 May 2022, pp.167821

Characterization of analogue Monolithic Active Pixel Sensor test structures implemented in a 65 nm CMOS imaging process / Rinella, Gianluca Aglieri (CERN) ; Alocco, Giacomo (INFN, Cagliari) ; Antonelli, Matias (INFN, Trieste) ; Baccomi, Roberto (INFN, Trieste) ; Beole, Stefania Maria (INFN, Turin) ; Blidaru, Mihail Bogdan (Heidelberg U.) ; Buttwill, Bent Benedikt (Heidelberg U.) ; Buschmann, Eric (CERN) ; Camerini, Paolo (Trieste U. ; INFN, Trieste) ; Carnesecchi, Francesca (CERN) et al.
Analogue test structures were fabricated using the Tower Partners Semiconductor Co. CMOS 65 nm ISC process. [...]
arXiv:2403.08952.- 2024-09-21 - 40 p. - Published in : Nucl. Instrum. Methods Phys. Res., A 1069 (2024) 169896 Fulltext: 2403.08952 - PDF; Publication - PDF;

Developing a Monolithic Silicon Sensor in a 65nm CMOS Imaging Technology for Future Lepton Collider Vertex Detectors / Simancas, Adriana (DESY, Zeuthen ; Bonn U.) ; Braach, Justus (CERN ; Hamburg U.) ; Buschmann, Eric (CERN) ; Chauhan, Ankur (DESY, Zeuthen) ; Dannheim, Dominik (CERN) ; Viera, Manuel Del Rio (DESY, Zeuthen ; Bonn U.) ; Dort, Katharina (CERN ; Giessen U.) ; Eckstein, Doris (DESY, Zeuthen) ; Feindt, Finn (DESY, Zeuthen) ; Gregor, Ingrid-Maria (DESY, Zeuthen) et al.
Monolithic CMOS sensors in a 65 nm imaging technology are being investigated by the CERN EP Strategic R&D; Programme on Technologies for Future Experiments for an application in particle physics. The appeal of monolithic detectors lies in the fact that both sensor volume and readout electronics are integrated in the same silicon wafer, providing a reduction in production effort, costs and scattering material. [...]
arXiv:2303.18153.- 2022-11-05 - 7 p. - Published in : 10.1109/NSS/MIC44845.2022.10398964 Fulltext: PDF;
In : 2022 IEEE Nuclear Science Symposium (NSS), Medical Imaging Conference (MIC) and Room Temperature Semiconductor Detector (RTSD) Conference (NSS/MIC 2022), Milan, Italy, 5 - 12 Nov 2022

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