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RD50 Status Report 2008 - Radiation hard semiconductor devices for very high luminosity colliders / Balbuena, Juan Pablo (Barcelona, Inst. Microelectron.) ; Bassignana, Daniela (Barcelona, Inst. Microelectron.) ; Campabadal, Francesca (Barcelona, Inst. Microelectron.) ; Díez, Sergio (Barcelona, Inst. Microelectron.) ; Fleta, Celeste (Barcelona, Inst. Microelectron.) ; Lozano, Manuel (Barcelona, Inst. Microelectron.) ; Pellegrini, Giulio (Barcelona, Inst. Microelectron.) ; Rafí, Joan Marc (Barcelona, Inst. Microelectron.) ; Ullán, Miguel (Barcelona, Inst. Microelectron.) ; Creanza, Donato (Bari U. ; INFN, Bari) et al.
The objective of the CERN RD50 Collaboration is the development of radiation hard semiconductor detectors for very high luminosity colliders, particularly to face the requirements of a possible upgrade scenario of the LHC.This document reports the status of research and main results obtained after the sixth year of activity of the collaboration..
CERN-LHCC-2010-012 ; LHCC-SR-003. - 2010. - 73 p.
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Properties of a radiation-induced charge multiplication region in epitaxial silicon diodes / Lange, Jörn (Hamburg U., Inst. Exp. Phys. II) ; Becker, Julian (Hamburg U., Inst. Exp. Phys. II) ; Fretwurst, Eckhart (Hamburg U., Inst. Exp. Phys. II) ; Klanner, Robert (Hamburg U., Inst. Exp. Phys. II) ; Lindström, Gunnar (Hamburg U., Inst. Exp. Phys. II)
Charge multiplication (CM) in p$^+$n epitaxial silicon pad diodes of 75, 100 and 150 $\upmu$m thickness at high voltages after proton irradiation with 1 MeV neutron equivalent fluences in the order of $10^{16}$ cm$^{-2}$ was studied as an option to overcome the strong trapping of charge carriers in the innermost tracking region of future Super-LHC detectors. Charge collection efficiency (CCE) measurements using the Transient Current Technique (TCT) with radiation of different penetration (670, 830, 1060 nm laser light and $\alpha$-particles with optional absorbers) were used to locate the CM region close to the p$^+$-implantation. [...]
arXiv:1007.4735.- 2010 - 11 p. - Published in : Nucl. Instrum. Meth. A 622 (2010) 49-58 External link: Preprint

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Epitaxial silicon detectors for particle tracking--Radiation tolerance at extreme hadron fluences / Lindstrom, Gunnar ; Dolenc, Irena ; Fretwurst, Eckhart ; Honniger, Frank ; Kramberger, Gregor ; Moll, Michael ; Nossarzhevska, E ; Pintilie, Ioana ; Röder, Ralf
2006 - Published in : Nucl. Instrum. Methods Phys. Res., A 568 (2006) 66-71

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似た著者名：
96	Lindstrom, G
1	Lindstrom, G.
3	Lindstrom, Gunnar
96	Lindström, G

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