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Neutrino Rate Predictions for FASER
/ FASER Collaboration
The Forward Search Experiment (FASER) at CERN's Large Hadron Collider (LHC) has recently directly detected the first collider neutrinos. Neutrinos play an important role in all FASER analyses, either as signal or background, and it is therefore essential to understand the neutrino event rates. [...]
arXiv:2402.13318.-
2024-07-01 - 19 p.
- Published in : Phys. Rev. D 110 (2024) 012009
Fulltext: PDF;
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MALTA monolithic pixel sensors in TowerJazz 180 nm technology
/ Solans Sánchez, C (CERN) ; Allport, P (Birmingham U.) ; Asensi Tortajada, I (CERN) ; Berlea, D V (Oslo U.) ; Bortoletto, D (Oxford U.) ; Dachs, F (CERN) ; Dao, V (CERN) ; Denizli, H (Abant Izzet Baysal U.) ; Dobrijevic, D (CERN ; Zagreb U.) ; Dyndal, M (CERN) et al.
Depleted Monolithic Active Pixel Sensors are of highest interest at the HL-LHC and beyond for the replacement of the Pixel trackers in the outermost layers of experiments where the requirement on total area and cost effectiveness is much bigger. They aim to provide high granularity and low material budget over large surfaces with ease of integration. [...]
2023 - 5 p.
- Published in : Nucl. Instrum. Methods Phys. Res., A 1057 (2023) 168787
Fulltext: PDF;
In : 30th International Workshop on Vertex Detectors (VERTEX 2021), Online, UK, 27 - 30 Sep 2021, pp.168787
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A Compact Front-End Circuit for a Monolithic Sensor in a 65-nm CMOS Imaging Technology
/ Piro, F (CERN ; Ecole Polytechnique, Lausanne) ; Rinella, G Aglieri (CERN) ; Andronic, A (U. Munster) ; Antonelli, M (INFN, Trieste) ; Aresti, M (Cagliari U. ; INFN, Cagliari) ; Baccomi, R (INFN, Trieste) ; Becht, P (Heidelberg U.) ; Beolè, S (Turin U. ; INFN, Turin) ; Braach, J (CERN) ; Buckland, M D (INFN, Trieste ; Trieste U.) et al.
This article presents the design of a front-end circuit for monolithic active pixel sensors (MAPSs). The circuit operates with a sensor featuring a small, low-capacitance (< 2 fF) collection electrode and is integrated into the DPTS chip, a proof-of-principle prototype of 1.5×1.5 mm including a matrix of 32×32 pixels with a pitch of 15μm . [...]
2023 - 10 p.
- Published in : IEEE Trans. Nucl. Sci. 70 (2023) 2191-2200
Fulltext: PDF;
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Optimization of a 65 nm CMOS imaging process for monolithic CMOS sensors for high energy physics
/ Rinella, G Aglieri (CERN) ; Andronic, A (Munster U., ITP) ; Antonelli, M (INFN, Trieste ; Trieste U.) ; Baccomi, R (INFN, Trieste ; Trieste U.) ; Ballabriga, R (CERN) ; Barbero, M (Marseille, CPPM) ; Barrillon, P (Marseille, CPPM) ; Baudot, J (Strasbourg, IPHC) ; Becht, P (Heidelberg U.) ; Benotto, F (INFN, Turin ; Turin U.) et al.
The long term goal of the CERN Experimental Physics Department R&D; on monolithic sensorsis the development of sub-100nm CMOS sensors for high energy physics. The first technologyselected is the TPSCo 65nm CMOS imaging technology. [...]
2023 - 15 p.
- Published in : PoS Pixel2022 (2023) 083
Fulltext: PDF;
In : 10th International Workshop on Semiconductor Pixel Detectors for Tracking and Imaging (PIXEL 2022), Santa Fe, USA, 11 - 16 Dec 2022, pp.083
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Test-beam Performance Results of the FASTPIX Sub-Nanosecond CMOS Pixel Sensor Demonstrator
/ Braach, Justus (CERN ; Hamburg U.) ; Buschmann, Eric (CERN) ; Dannheim, Dominik (CERN) ; Dort, Katharina (CERN ; Giessen U., Inst. Kernphys.) ; Kugathasan, Thanushan (Geneva U.) ; Munker, Magdalena (Geneva U.) ; Snoeys, Walter (CERN) ; Švihra, Peter (CERN) ; Vicente, Mateus (CERN ; Geneva U.)
Within the ATTRACT FASTPIX project, a monolithic pixel sensor demonstrator chip has been developed in a modified 180 nm CMOS imaging process technology, targeting sub-nanosecond timing precision for single ionising particles. It features a small collection electrode design on a 25 micrometers-thick epitaxial layer and contains 32 mini matrices of 68 hexagonal pixels each, with pixel pitches ranging from 8.66 to 20 micrometers. [...]
arXiv:2306.05938.-
2023-09-09 - 15 p.
- Published in : Nucl. Instrum. Methods Phys. Res., A 1056 (2023) 168641
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Search for dark photons with the FASER detector at the LHC
/ FASER collaboration
The FASER experiment at the LHC is designed to search for light, weakly-interacting particles produced in proton-proton collisions at the ATLAS interaction point that travel in the far-forward direction. The first results from a search for dark photons decaying to an electron-positron pair, using a dataset corresponding to an integrated luminosity of $27.0~\mathrm{fb}^{-1}$ collected at center-of-mass energy $\sqrt{s} = 13.6$ TeV in 2022 in LHC Run 3, are presented. [...]
arXiv:2308.05587; CERN-EP-2023-161.-
2023-12-07 - 10 p.
- Published in : Phys. Lett. B 848 (2024) 138378
Fulltext: DarkPhoton_PLB_Final - PDF; 2308.05587 - PDF; Publication - PDF;
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Design and readout architecture of a monolithic binary active pixel sensor in TPSCo 65 nm CMOS imaging technology
/ Cecconi, L (CERN) ; Piro, F (CERN ; Ecole Polytechnique, Lausanne) ; de Melo, J L A (CERN) ; Deng, W (CERN ; Hua-Zhong Normal U.) ; Hong, G H (CERN ; Yonsei U.) ; Snoeys, W (CERN) ; Mager, M (CERN) ; Suljic, M (CERN) ; Kugathasan, T (CERN) ; Buckland, M (Trieste U. ; INFN, Trieste) et al.
The Digital Pixel Test Structure (DPTS) is a monolithic active pixel sensor prototype chip designed to explore the TPSCo 65 nm ISC process in the framework of the CERN-EP R&D; on monolithic sensors and the ALICE ITS3 upgrade. It features a 32 × 32 binary pixel matrix at 15 μm pitch with event-driven readout, with GHz range time-encoded digital signals including Time-Over-Threshold. [...]
2023 - 9 p.
- Published in : JINST 18 (2023) C02025
In : Topical Workshop on Electronics for Particle Physics 2022 (TWEPP 2022), Bergen, Norway, 19 - 23 Sep 2022, pp.C02025
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Design of an analog monolithic pixel sensor prototype in TPSCo 65 nm CMOS imaging technology
/ Deng, W (Hua-Zhong Normal U. ; CERN) ; Aglieri Rinella, G (CERN) ; Aresti, M (Catania U. ; INFN, Catania) ; Baudot, J (Strasbourg, IPHC) ; Benotto, F (INFN, Turin ; Turin U.) ; Beole, S (INFN, Turin ; Turin U.) ; Bialas, W (CERN) ; Borghello, G (CERN) ; Bugiel, S (Strasbourg, IPHC) ; Campbell, M (CERN) et al.
A series of monolithic active pixel sensor prototypes (APTS chips) were manufactured in the TPSCo 65 nm CMOS imaging process in the framework of the CERN-EP R&D; on monolithic sensors and the ALICE ITS3 upgrade project. Each APTS chip contains a 4 × 4 pixel matrix with fast analog outputs buffered to individual pads. [...]
2023 - 9 p.
- Published in : JINST 18 (2023) C01065
In : Topical Workshop on Electronics for Particle Physics 2022 (TWEPP 2022), Bergen, Norway, 19 - 23 Sep 2022, pp.C01065
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